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IRF9393TRPBF
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package
International
IEER Rectifier
PD - 97522A
IRF9393PbF
HEXFET© Power MOSFET
V03 -30 V
Vas max :25 V
RDS(on) max
(@VGS = -10V) 19.4 mn
@n=%m) -9.2 A
Applications
. Adaptor Input Switch for Notebook PC
Features and Benefits
Features
Resulting Benefits
25V I/ss max
Indu stry-Stand ard SO8 Package
Direct Drive at High l/ss
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Multi-Vendor Com patibility
Environmentally Friendlier
Orderable part number Package Type Standard Pack Note
Form Quantity
IRF9393PbF SO8 Tube/Bulk 95
IRF9393TRPbF SO8 Tape and Reel 4000
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage -30 V
VGS Gate-to-Source Voltage t 25
ID @ T, = 25°C Continuous Drain Current, I/ss @ 10V -9.2
ln © T, = 70°C Continuous Drain Current, Vas @ 10V -7.3 A
IDM Pulsed Drain Current CO -75
PD @TA = 25°C Power Dissipation © 2.5 W
PD @TA = 70°C Power Dissipation © 1.6
Linear Derating Factor 0.02 W/°C
TJ Operating Junction and -55 to + 150 °C
TSTS Storage Temperature Range
Notes co through © are on page 2
11/3/10
IRF9393PbF
Static © To = 25°C (unless otherwise specified)
International
TOR Rectifier
Parameter Min Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage -30 - - V Vas = 0V, lo = -250pA
ABN/oss/ATU Breakdown Voltage Temp. Coefficient -- 0.019 -- VPC Reference to 25°C, ID = -1mA
RDS(on) . . . - 13.3 - Vss = -2ov, ID = -9.2A ©
Static Drain-to-Source On-Resistance - 15.6 19.4 mn Vss = -10V, ID = -9.2A ©
- 25.6 32.5 Vas = -4.5V, ID = -7.5A ©
VGS(th) Gate Threshold Voltage -1.3 -1.8 -2.4 v Vos = Ves, ID = -25uA
AVGSW Gate Threshold Voltage Coefficient - -5.7 - mV/°C
loss Drain-to-Source Leakage Current - - -1.0 p A Vos = -24V, Vss = 0V
_ _ -150 Vos = -24V, l/as = 0V, T, = 125°C
less Gate-to-Source Forward Leakage -- -- -10 y A Vas = -25V
Gate-to-Source Reverse Leakage - - 10 Vss = 25V
gfs Forward Transconductance 13 - - S Vos = -10V, ID = -7.5A
% Total Gate Charge © - 14 - nC Vos = -15V, Vas = -4.5V, ID = - 7.5A
a, Total Gate Charge © -- 25 38 Vas = -10V
As Gate-to-Source Charge © - 3.5 - nC Vos = -15V
di Gate-to-Drain Charge © - 6.4 - ID = -7.5A
Re Gate Resistance © - 15 - Q
td(on) Turn-On Delay Time - 16 - VDD = -15V, Vas = -4.5V ©
t, Rise Time - 44 --.- ns ID = -1.0A
td(off) Turn-Off Delay Time - 55 - Rs = 6.89
t, Fall Time - 49 - See Figs. 20a &20b
Ciss Input Capacitance _ 1110 _ Vas = OV
Coss Output Capacitance - 230 --.- pF Vos = -25V
Crss Reverse Transfer Capacitance - 160 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy © - 100 mJ
IAR Avalanche Current C) - -7.5 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current _ _ -2.5 MOSFET symbol D
(Body Diode) A showing the 5
ISM Pulsed Source Current - - -75 integral reverse s
(Body Diode) C) p-n junction diode.
VSD Diode Forward Voltage -- -- -1.2 V To = 25°C, ls = -2.5A, VGS = 0V ©
tn Reverse Recovery Time -- 24 36 ns T J = 25°C, IF = -2.5A, VDD = -24V
Qrr Reverse Recovery Charge - 15 23 n0 di/dt = 100A/ps ©
Thermal Resistance
Parameter Typ. Max. Units
Fur. Junction-to-Drain Lead s -- 20 °C/W
Ram Junction-to-Ambient © - 50
Notes:
OD Repetitive rating; pulse width limited by max. junction temperature.
© Starting Tu = 25°C, L = 3.5mH, Rs = 259, IAS; = -7.5A.
© Pulse width f 400ps; duty cycle I 2%.
© When mounted on 1 inch square copper board.
s Re is measured at TJ of approximately 90°C.
© For DESIGN AID ONLY, not subject to production testing.
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