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IRF9392TRPBF
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package
PD- 97571
International
IEER Rectifier IRF9392PbF
HEXFET© Power MOSFET
Vros -30 v
Vas max t25 v I“
s 2 7 D
RDS(on) max 17 5 m9 (li le,
(@Vss=-10V) . s a i no
In G 4 I- D
-9.8 A
(@TA = 25°C) SO-8
Applications
q Adaptor Input Switch for Notebook PC
Features and Benefits
Features Resulting Benefits
25V I/ss max Direct Drive at High Vss
Industry-Standard SOB Package Multi-Vendor Compatibility
RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier
Orderable part number Package Type Standard Pack Note
Form Quantity
IRF9392PbF SO8 Tube/Bulk 95
IRF9392TRPbF 808 Tape and Reel 4000
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage -30 V
Ves Gate-to-Source Voltage t25
ID @ TA = 25°C Continuous Drain Current, Vas @ -10V -9.8
In @ TA = 70°C Continuous Drain Current, Vss © -10V -7.8 A
IDM Pulsed Drain Current C) -80
PD @TA = 25°C Power Dissipation © 2.5 W
PD @TA = 70°C Power Dissipation © 1.6
Linear Derating Factor 0.02 W/°C
TJ Operating Junction and -55 to + 150 "C
TSTG Storage Temperature Range
Notes OD through © are on page 2
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09/30/2010
IRF9392PbF International
TOR Rectifier
Static © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVoss Drain-to-Source Breakdown Voltage -30 - - V Vss = 0V, ID = -250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 0.021 - V/°C Reference to 25°C, ID = -1rnA
RDS(on) . . . - 13.6 17.5 Vas = -10V, ID = -9.8A ©
Static Drain-to-Source On-Resistance _ 12.1 - mQ Vss = -20V, '0 = -7.8A ©
VGS(th) Gate Threshold Voltage -1.3 -1.9 -2.4 V Vos = Vas, ID = -25pA
AVGS(lh) Gate Threshold Voltage Coefficient -- -5.7 -- mV/°C
loss Drain-to-Source Leakage Current - --- -1.0 A Vos = -24V, Ves = 0V
- - -150 " vDs = -24v, Vss = OV, T: = 125°C
less Gate-to-Source Forward Leakage - - -10 pA Vss = -25V
Gate-to-Source Reverse Leakage - - 10 Vss = 25V
gfs Forward Transconductance 36 - - S Vos = -10V, lo = -7.8A
Qg Total Gate Charge © - 14 - nC Vos = -15V,VGS = -4.5V,ID = -7.8A
09 Total Gate Charge © - 27 - Ves = -10V
As Gate-to-Source Charge © - 4.1 - nC Vos = -15V
di Gate-to-Drain Charge © - 6.6 - ID = -7.8A
Rs Gate Resistance © - 18 - Q
tam Turn-On Delay Time -- 15 -- VDD = -15V, Vas = -4.5V ©
t, Rise Time -- 47 -- ns ID = -1.0A
td(off) Turn-Off Delay Time - 73 - Rs = 6.89
t, Fall Time - 58 - See Figs. 19a & 19b
Ciss Input Capacitance - 1270 - Vss = 0V
Coss Output Capacitance - 250 - pF VDS = -25V
Crss Reverse Transfer Capacitance - 180 - f = 1.0KHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy © - 102 md
IAR Avalanche Current (D - -7.8 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - _ -2.5 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current -- _ -80 integral reverse (S s
(Body Diode) (D p-n junction diode.
Vso Diode Forward Voltage - - -1.2 V Tu = 25°C, ls = -2.5A, 1/ss = 0V ©
trr Reverse Recovery Time - 36 54 ns Tu = 25°C, IF = -2.5A, VDD = -24V
Qrr Reverse Recovery Charge - 20 30 nC di/dt = 100/ys ©
Thermal Resistance
Parameter Typ. Max. Units
fur, Junction-to-Drain Lead © - 2O 'C/W
ReJA Junction-to-Ambient © - 50
Notes:
OD Repetitive rating; pulse width limited by max. junction temperature.
© Starting To = 25°C, L = 3.3mH, Rs = 259, IAS = -7.8A.
© Pulse width f 400ps; duty cycle S 2%.
© When mounted on 1 inch square copper board.
s R9 is measured at Tu of approximately 90°C.
© For DESIGN AID ONLY, not subject to production testing.
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