IRF9335TRPBF ,-30V Single P-Channel HEXFET Power MOSFET in a SO-8 packageFeatures Resulting Benefitsresults in Industry-Standard SO-8 Package Multi-Vendor CompatibilityRoHS ..
IRF9362 ,-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 packageFeatures Resulting BenefitsIndustry-Standard SO-8 Package results in Multi-Vendor CompatibilityRoHS ..
IRF9362TRPBF ,-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package IRF9362PbFHEXFET Power MOSFETV -30 VDS
IRF9335TRPBF
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package
International
IEER Rectifier
V03 -30 V
(23:33:; 59 m
(56:52:22) 110 m9
09 (typical) 9.1 nC
(@TA l,, -5.4 A
Applications
PD- 96311A
IRF9335PbF
HEXFET© Power MOSFET
459 l- D
q Charge and Discharge Switch for Notebook PC Battery Application
q System/Load Switch
Features and Benefits
Features
Industry-Standard SO-8 Package
results in
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Resulting Benefits
Multi-Vendor Compatibility
Environmentally Friendlier
Orderable part number Package Type Standard Pack Note
Form Quantity
lF1F9335PbF SO8 Tube/Bulk 95
IRF9335TRPbF SO8 Tape and Reel 4000
Absolute Maximum Ratings
Parameter Max. Units
l/os Drain-to-Source Voltage -30 V
l/tss Gate-to-Source Voltage t20
ID © T, = 25°C Continuous Drain Current, l/ss © -10V -5.4
ID @ TA = 70°C Continuous Drain Current, Ves @ -10V -4.3 A
IDM Pulsed Drain Current CD -43
PD ©T, = 25°C Power Dissipation © 2.5 W
PD @TA = 70°C Power Dissipation © 1.6
Linear Deratinq Factor 0.02 W/°C
TJ Operating Junction and -55 to + 150 I
TSTG Storage Temperature Range
Notes OD through © are on page 2
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06/17/10
IRF9335PbF International
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVoss Drain-to-Source Breakdown Voltage -30 - - V l/ss = 0V, lo = -250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 0.019 - V/°C Reference to 25°C, lo = -1mA
RDS(on) . . . - 48 59 Vss = -10V, b = -5.4A ©
Static Drain-to-Source On-Resistance _ 83 110 mn Ves = -4.5V, lo = -4.3A ©
VGS(th) Gate Threshold Voltage -1.3 -1.8 -2.4 V I/os = Vas, b = -10pA
AVGSW Gate Threshold Voltage Coefficient - -5.1 - mV/°C
loss Drain-to-Source Leakage Current - - -1.0 A VDS = -24V, Vss = 0V
- _ -150 " Vos = -24v, Vss = OV, TJ = 125°C
less Gate-to-Source Forward Leakage - - -100 nA Vss = -20V
Gate-to-Source Reverse Leakage - - 100 Vss = 20V
gfs Forward Transconductance 5.4 - - S Vos = -10V, lo = M.3A
q, Total Gate Charge © - 4.7 - nC Vos = -15V,VGS = -4.5V,lo = - 4.3A
q, Total Gate Charge © - 9.1 14 Vas = -10V
093 Gate-to-Source Charge © -- 1.3 -- nC Vos = -15V
di Gate-to-Drain Charge © -- 2.6 -- ID = -4.3A
Rs Gate Resistance © -- IO - Q
td(on) Turn-On Delay Time - 9.7 - VDD = -15V, Vss = -4.5V OD
t, Rise Time - 19 - ns ID = -1.0A
td(ott) Turn-Off Delay Time - 16 - Rs = 6.89
if Fall Time - 15 - See Figs. 19a & 19b
Ciss Input Capacitance - 386 - Vss = 0V
Coss Output Capacitance - 94 - pF Vos = -25V
Crss Reverse Transfer Capacitance - 66 - f = 1.0KHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy C) - 98 mJ
IAR Avalanche Current C) - -4.3 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - _ -2.5 MOSFET symbol D
(Body Diode) A showing the
G, Pulsed Source Current - _ -43 integral reverse G s
(Body Diode) C) p-n junction diode.
VSD Diode Forward Voltage - --- -1.2 V Tu = 25°C, ls = -2.5A, VGS = 0V ©
trr Reverse Recovery Time - 14 21 ns Tu = 25°C, IF = -2.5A, VDD = -24V
Qrr Reverse Recovery Charge - 7.4 11 nC di/dt = 100/ps ©
Thermal Resistance
Parameter Typ. Max. Units
ReJL Junction-to-Drain Lead s - 20 °C/W
ReJA Junction-to-Ambient © - 50
Notes:
OD Repetitive rating; pulse width limited by max. junction temperature.
© Starting Tu = 25°C, L =10.6mH, Rs = 509, IAS; = -4.3A.
© Pulse width f 400ps; duty cycle S 2%.
© When mounted on 1 inch square copper board.
s R9 is measured at Tu of approximately 90°C.
© For DESIGN AID ONLY, not subject to production testing.
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