IRF9333TRPBF ,-30V Single P-Channel HEXFET Power MOSFET in a SO-8 packageFeaturesIndustry-Standard SO8 Package Multi-Vendor CompatibilityRoHS Compliant Containing no Lead ..
IRF9335TRPBF ,-30V Single P-Channel HEXFET Power MOSFET in a SO-8 packageFeatures Resulting Benefitsresults in Industry-Standard SO-8 Package Multi-Vendor CompatibilityRoHS ..
IRF9362 ,-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 packageFeatures Resulting BenefitsIndustry-Standard SO-8 Package results in Multi-Vendor CompatibilityRoHS ..
IRF9362TRPBF ,-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package IRF9362PbFHEXFET Power MOSFETV -30 VDS
IRF9333TRPBF
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package
International
IEER Rectifier
PD - 97523
IRF9333PbF
HEXFET© Power MOSFET
V03 -30 V
(33:02:13; ) 19.4 mg
(£53323) 32.5 mg
A (typical) 14 nC
(@TA I=D25°C) -9.2 A
Applications
q Charge and Discharge Switch for Notebook PC Battery Application
Features and Benefits
Features
Resulting Benefits
Industry-Standard SOB Package
Multi-Vendor Compatibility
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Environmentally Friendlier
Orderable part number Package Type Standard Pack Note
Form Quantity
IRF9333PbF SOS Tu be/Bulk 95
IRF9333TRPbF SO8 Tape and Reel 4000
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage -30 V
Vss Gate-to-Source Voltage A 20
ID © T, = 25°C Continuous Drain Current, Vas @ 10V -9.2
ID @ TA = 70°C Continuous Drain Current, Vss © 10V -7.3 A
IDM Pulsed Drain Current OD -75
PD ©T, = 25°C Power Dissipation © 2.5 W
PD @TA = 70°C Power Dissipation © 1.6
Linear Derating Factor 0.02 WPC
TJ Operating Junction and -55 to + 150 °C
TSTG Storage Temperature Range
Notes co through © are on page 2
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6/21/10
IRF9333PbF
Static © To = 25°C (unless otherwise specified)
International
TOR Rectifier
Parameter Min Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage -30 - - V Vas = 0V, b = -250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient -- 0.019 -- V/°C Reference to 25°C, ID = -1mA
RDS(on) . . . - 15.6 19.4 Vss = -10V, ID = -9.2A OD
Static Drain-to-Source On-Resistance - 25.6 32.5 mg Vos = -4.5V, lo = -7.5A ©
VGSW Gate Threshold Voltage -1.3 -1.8 -2.4 V Vos = Vas, ID = -25pA
AN/sam) Gate Threshold Voltage Coefficient -- -5.7 -- mV/°C
loss Drain-to-Source Leakage Current - - -1.0 l/rss = -24V, Vss = 0V
- _ -150 pA Vos = -24v, Vss = OV, TJ = 125°C
less Gate-to-Source Forward Leakage - - -100 nA I/ss = -20V
Gate-to-Source Reverse Leakage -- -- 100 Vas = 20V
gfs Forward Transconductance 13 - - S VDs = -10V, ID = -7.5A
09 Total Gate Charge © - 14 - nC Vos = -15V, Vss = -4.5V, ID = - 7.5A
Qg Total Gate Charge © - 25 38 I/ss = -10V
As Gate-to-Source Charge © -- 3.5 -- nC Vos = -15V
di Gate-to-Drain Charge © - 6.4 - ID = -7.5A
Re Gate Resistance © - 15 - Q
tum") Turn-On Delay Time - 16 - VDD = -15V, Vss = -4.5V OD
tr Rise Time -- 44 -- ns ID = -1.0A
td(off) Turn-Off Delay Time - 55 - Rs = 6.89
tf Fall Time - 49 - See Figs. 20a &20b
Ciss Input Capacitance - 1110 - Vss = 0V
Coss Output Capacitance - 230 - pF Vos = -25V
Crss Reverse Transfer Capacitance - 160 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAs Single Pulse Avalanche Energy © - 100 mJ
lAn Avalanche Current co - -7.5 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - _ -2.5 MOSFET symbol a
(Body Diode) A showing the G
ISM Pulsed Source Current - - -75 integral reverse s
(Body Diode) OD p-n junction diode.
VSD Diode Forward Voltage - - -1.2 V Tu = 25°C, Is = -2.5A, VGS = 0V ©
trr Reverse Recovery Time - 24 36 ns Tu = 25°C, IF = -2.5A, VDD = -24V
Qrr Reverse Recovery Charge -- 15 23 nC di/dt = 100A/ps ©
Thermal Resistance
Parameter Typ. Max. Units
' Junction-to-Drain Lead © - 20 °C/W
ROJA Junction-to-Ambient © - 50
Notes:
OD Repetitive rating; pulse width limited by max. junction temperature.
© Starting Tu = 25°C, L = 3.5mH, Rs = 259, IAS = -7.5A.
© Pulse width 3 400ps; duty cycle S 2%.
© When mounted on 1 inch square copper board.
s R9 is measured at TJ of approximately 90°C.
© For DESIGN AID ONLY, not subject to production testing.
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