IRF9328TRPBF ,-30V Single P-Channel HEXFET Power MOSFET in a SO-8 packageFeaturesIndustry-Standard SO8 Package Multi-Vendor CompatibilityRoHS Compliant Containing no Lead ..
IRF9333TRPBF ,-30V Single P-Channel HEXFET Power MOSFET in a SO-8 packageFeaturesIndustry-Standard SO8 Package Multi-Vendor CompatibilityRoHS Compliant Containing no Lead ..
IRF9335TRPBF ,-30V Single P-Channel HEXFET Power MOSFET in a SO-8 packageFeatures Resulting Benefitsresults in Industry-Standard SO-8 Package Multi-Vendor CompatibilityRoHS ..
IRF9362 ,-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 packageFeatures Resulting BenefitsIndustry-Standard SO-8 Package results in Multi-Vendor CompatibilityRoHS ..
IRF9362TRPBF ,-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package IRF9362PbFHEXFET Power MOSFETV -30 VDS
IRF9328TRPBF
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package
International
IEER Rectifier
PD - 97518
IRF9328PbF
HEXFET© Power MOSFET
VDS -30 V
((23:03:33) 11.9 m9 s 2 si))
($563323; 19.7 mf2 : f; h I
A (typica0 18 nC
(@TAI=|325°C) -12 A
Applications
q Charge and Discharge Switch for Notebook PC Battery Application
Features and Benefits
Features
Industry-Standard SOB Package
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Resulting Benefits
Multi-Vendor Compatibility
Environmentally Friendlier
Orderable part number Package Type Standard Pack Note
Form Quantity
IRF9328PbF SOB Tu be/Bulk 95
IRF9328TRPbF SOB Tape and Reel 4000
Absolute Maxim um Ratings
Parameter Max. Units
VDS Drain-to-S ouroe Voltage -30 V
l/ss Gate-to-Souroe Voltage 1 20
ID @ TA = 25°C Conti nuous Drain Current, l/ss @ 10V -12
ID @ TA = 70°C Conti nuous Drain Current, Vas @ 10V -9.6 A
IDM Pulsed Drain Current C) -96
PD ©T, = 25°C Power Dissipation © 2.5 W
PD ©T, = 70°C Power Dissipation © 1.6
Linear Derating Factor 0.02 W/°C
TJ Operating Juncton and -55 to + 150 cc
TSTG Storage Temperature Range
Notes co through © are on page 2
1
5/26/10
IRF9328PbF
Static © TJ = 25''C (unless otherwise specified)
International
TOR Rectifier
Parameter Min Typ. Max. Units Conditions
BVoss Drain-to-Source Breakdown Voltage -30 - - V Vss = 0V, lo = -250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 0.021 - V/°C Reference to 25°C, lo = -1mA
Roson) . . . - 10 11.9 l/ss = -1ov, ID = -12A ©
( Static Drain-to-Source On-Resistance - 16.1 19.7 mQ Vss = -4.5V, ID = -9.6A ©
Vesuh) Gate Threshold Voltage -1.3 -1.8 -2.4 V Vos = Vss, '0 = -25pA
AVGsah) Gate Threshold Voltage Coefficient - -5.8 - mV/°C
loss Drain-to-Source Leakage Current - - -1.0 A VDs = -24V, Vas = 0V
- - -150 " v05 = -24v, I/ss = OV, To = 125°C
less Gate-to-Source Forward Leakage - - -100 nA Ves = -20V
Gate-to-Source Reverse Leakage - - 100 Ves = 20V
gfs Forward Transconductance 20 - - S Vos = -10V, ID = -9.6A
q, Total Gate Charge © - 18 - nC Vos = -15V, Vss = -4.5V, ID = - 9.6A
q, Total Gate Charge © - 35 52 Ves = -10V
095 Gate-to-Source Charge © - 5.3 - nC Vos = -15V
di Gate-to-Drain Charge © - 8.5 - ID = -9.6A
Re Gate Resistance © - 15 - Q
tum") Turn-On Delay Time - 19 - VDD = -15V, Vss = -4.5V ©
t, Rise Time - 57 - ns lo = -1.0A
tom Turn-Off Delay Time - 80 - Rs = 6.89
t, Fall Time - 66 - See Figs. 20a &20b
Ciss Input Capacitance - 1680 - Ves = 0V
Cass Output Capacitance - 350 - pF Vos = -25V
Crss Reverse Transfer Capacitance - 220 - f = 1.0kHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy © - 120 mJ
IAR Avalanche Current CD -- -9.6 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 41.5 MOSFET symbol D
(Body Diode) A showing the G
Iss, Pulsed Source Current _ - -96 integral reverse s
(Body Diode) CD p-n junction diode.
Vso Diode Forward Voltage - - -1.2 V Tu = 25°C, ls = -2.5A, vss = 0V ©
in Reverse Recovery Time - 51 76 ns TU = 25°C, IF = -2.5A, VDD = -24V
Q,, Reverse Recovery Charge - 35 53 nC di/dt = 1OOA/ps ©
Thermal Resistance
Parameter Typ. Max. Units
ROJL Junction-to-Drain Lead © - 20 °C/W
ROJA Junction-to-Ambient © - 50
Notes:
OD Repetitive rating; pulse width limited by max. junction temperature.
© Starting Tu = 25°C, L = 2.6mH, Rs = 259, IAS = -9.6A.
© Pulse width 3 400ps; duty cycle S 2%.
© When mounted on 1 inch square copper board.
s R9 is measured at TJ of approximately 90°C.
© For DESIGN AID ONLY, not subject to production testing.
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