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IRF9140
-100V Single P-Channel Hi-Rel MOSFET in a TO-204AA package
Internet onol
TOR Rectifier
REPETITIVE AVALANCHE AND dvldt RATED
HEXFET®TRANSISTORS
THRU-HOLE (TO-204AAIAE)
ProductSummary
Part Number BVDSS RDS(on) ID
IRF9140 -100V 0.29 -18A
The HEXFET®techno|ogy is the key to International
RectifIer's advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
"State of the Art" design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dvldt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of parelleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
Absolute Maximum Ratings
PD - 93976B
IRF914O
100V, P-CHANNEL
Features:
Repetitive Avalanche Ratings
Dynamic dvldt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling
Parameter Units
ID @ VGS = 0V, TC = 25°C Continuous Drain Current -18
ID @ VGS = 0V, Tc = 100°C Continuous Drain Current -11 A
I D M Pulsed Drain Current C) -72
PD @ TC = 25°C Max. Power Dissipation 125 W
Linear Derating Factor 1.0 W/°C
Vas Gate-to-Source Voltage 120 V
EAS Single Pulse Avalanche Energy © 500 ml
IAR Avalanche Current co -18 A
EAR Repetitive Avalanche Energy co 12.5 ml
dv/dt Peak Diode Recovery dv/dt © -5.5 V/ns
TJ Operating Junction -55 to 150
TSTG Storage Temperature Range oC
Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s)
Weight 11.5(typical) g
For footnotes refer to the last page
1
09/22/03
IRF9140
International
TOR Rectifier
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage -100 - - V VGS = 0V, ID = -1.0mA
ABVDSS/ATJ Temperature Coemcient of Breakdown - -0.087 - V/°C Reference to 25''C, ID = -1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State - - 0.2 VGS = -10\/, ID = -11A ©
Resistance - - 0.23 Q VGS =-10V, ID = -18A ©
VGS(th) Gate Threshold Voltage -2.0 - -4.0 V VDs = VGS, ID = -25011A
git Forward Transconductance 6.2 - - S k) VDS > -15\/, IDS = -11A ©
toss Zero Gate Voltage Drain Current - - -25 VDS= -80V, VGs=0V
- - -250 pA VDS = -80V
VGS = 0V, TJ = 125°C
taz; Gate-to-Source Leakage Forward - - -100 VGS = -20V
bSS Gate-to-Source Leakage Reverse - - 100 nA VGS = 20V
ck Total Gate Charge 31 - 60 VGS =-10V, ID = -18A
095 Gate-to-Source Charge 3.7 - 13 nC VDS= -50V
di Gate-to-Drain ('Miller') Charge 7.0 - 35.2
td(on) Turn-On Delay Time - - 35 VDD = -50\/, ID = -18A,
tr Rise Time - - 85 ns VGS =-10V, RG = 9.19
td(off) Turn-Off Delay Time - - 85
tt Fall Time - - 65 nH Measured from drain lead (6mm/
Ls + LD Total Inductance - 6.1 - 0.25in. from package) to source lead
(6mm/0.25in. from package)
Ciss Input Capacitance - 1400 VGS = OV, VDs = -25V
Cogs OutputCapacitance - 600 - pF f = 1.0MHz
Crss Reverse Transfer Capacitance - 200 -
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
Is Continuous Source Current (Body Diode) - - -18 A
ISM Pulse Source Current (Body Diode) co - - -72
VSD Diode Forward Voltage - - -5.0 V T] = 25°C, Is =-18A, VGS = OV ©
trr Reverse Recovery Time - 170 280 rS Tj = 25°C, IF = -18A, di/dt S -100A/ps
QRR Reverse Recovery Charge - - 3.6 LC VDD 3 -50V (4)
ton Forward Turn-On Time Intrinsic tum-on time is negligible. Tum-on speed is substantially controlled by Ls + LD.
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case - - 1.0 "C/W
RthJ A Junction-to-Ambient - - 30 Soldered to a 2" square copper-clad board
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
