JANTXV2N6804 ,-100V Single P-Channel Hi-Rel MOSFET in a TO-204AA packagePD - 90549C IRF91 ..
JANTXV2N6851 ,-200V Single P-Channel Hi-Rel MOSFET in a TO-205AF packageapplications such as switch- Hermetically Sealeding power supplies, motor controls, inverters, cho ..
JANTXV2N7218 ,100V Single N-Channel Hi-Rel MOSFET in a TO-254AA packageapplications such as switching
power supplies and virtually any application where military
and/or ..
JANTXV2N7236 ,-100V Single P-Channel Hi-Rel MOSFET in a TO-254AA packagePD - 90495GIRFM9140JANTX2N7236JANTXV2N7236JANS2N7236POWER MOSFETREF:MIL-PRF-19500/595THRU-HOLE (TO- ..
JBP28L22MJ ,256x8 Bi-Polar PROMe , V . _SliiRllliiS 24 Am) 28STANDARD AND Low POWER PROGRAMMABLE READ-ONLY MEMORIESSEPTEMBER 1979¥ ..
JBP28L42MJ ,512x8 Bi-Polar PROMe , V . _SliiRllliiS 24 Am) 28STANDARD AND Low POWER PROGRAMMABLE READ-ONLY MEMORIESSEPTEMBER 1979¥ ..
K7A801800B-QC14 , 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
K7A803600B-QC14 , 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
K7A803609B-QC25 , 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
K7B801825B-QC75 , 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
K7D803671B-HC25 , 256Kx36 & 512Kx18 SRAM
K7I161882B-FC16 , 512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM
IRF9130-JANTXV2N6804
-100V Single P-Channel Hi-Rel MOSFET in a TO-204AA package
PD - 90549C
International
IEZR Rectifier
IRF9130
REPETITIVE AVALANCHE AND dv/dt RATED J AN TX2N6804
HEXFET®TRANSISTORS JANTXV2N6804
THRU-HOLE (TO-204AA/AE) TREF:M0u-PRF-19500/S62l
100V, P-CHANNEL
Product Summary
Part Number anss RDS(on) In
IRF9130 -l00V 0309 -11A
The HEXFET©technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
"State of the Art" design achieves: very low on-state resis- TO-3
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab- Features:
lished advantages of MOSFETs such as voltage control, a
. . . Repetitive Avalanche Ratings
very fast switching, ease of parelleling and temperature
. . . I: Dynamic dv/dt Rating
stability of the electrical parameters. a H erm eti cally S eal e d
They are well suited for applications such as switching I: Simple Drive Requirements
power supplies, motor controls, inverters, choppers, audio I: Ease ofParalleling
amplifiers and high energy pulse circuits.
Absolute Maximum Ratings
Parameter Units
ID @ VGS = 0V, TC = 25°C Continuous Drain Current -1 1
1D @ VGS = 0V, TC = 100°C Continuous Drain Current -7.0 A
IDM Pulsed Drain Current C) -50
PD @ TC = 25°C Max. Power Dissipation 75 W
Linear Derating Factor 0.60 W/°C
VGS Gate-to-Source Voltage £20 V
EAS Single Pulse Avalanche Energy © 81 mJ
IAR Avalanche Current Cf) -1 l A
EAR Repetitive Avalanche Energy co 7.5 m.)
dv/dt Peak Diode Recovery dv/dt © -5.5 V/ns
T] Operating Junction -55 to 150
TSTG Storage Temperature Range oC
Lead Temperature 300 (0.063 in. (16mm) from case for los)
Weight 11.5 (typical) g
For footnotes refer to the last page
1
01/22/01
IRF9130 International
TOR Rectifier
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage -l00 - - V VGS = 0V, ID = -1.0mA
ABVDss/ATJ Temperature Coefficient of Breakdown - -0.087 - V/°C Reference to 25°C, ID = -1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State - - 0.30 VGS =-10V, ID =-7.0AC0
Resistance - - 0.35 VGS =-10V, ID =-llA ©
VGS(th) Gate Threshold Voltage -2.0 - -4.0 V VDS = VGS, ID =-250pA
gfs Forward Transconductance 3 - - S (U) VDS >-15V, IDS =-7.0A@
IDSS Zero Gate Voltage Drain Current - - -25 VDS=-80V,VGS=0V
- - -250 HA VDs =-80V
VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Leakage Forward - - -100 nA VGS =-20V
IGSS Gate-to-Source Leakage Reverse - - 100 VGS =-20V
Qg Total Gate Charge - - 29 VGS =-10V, ID=-11A
Qgs Gate-to-Source Charge - - 7.1 nC VDS =-50V
Qgd Gate-to-Drain ('Miller') Charge - - 21
td(on) Turn-On Delay Time - - 6O VDD =-50V, ID =-11A,
tr Rise Time - - 140 RG =7.5f2
tti(om Turn-Off Delay Time - - 140 n S
tf Fall Time - - 140
LS + LD Total Inductance - 6.1 - nH Measured from the center of
drain pad to center of source
Ciss Input Capacitance - 860 VGS = 0V, VDS =25V
Cogs Output Capacitance - 350 - pF f = 1.0MHz
Crss Reverse Transfer Capacitance - 125 -
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
Is Continuous Source Current (Body Diode) - - -l 1 A
ISM Pulse Source Current (Body Diode) C) - - -50
VSD Diode Forward Voltage - - -4.7 V Tj = 25°C, ls =-llA, VGS = 0V co
trr Reverse Recovery Time - - 250 nS Tj = 25°C, IF =-llA, di/dt S-lOOA/us
QRR Reverse Recovery Charge - - 3.0 pc VDD S-SOV co
ton F orward Turn-On Time Intrinsic tum-on time is negligible. Turn-on speed is substantially controlled by Ls + LD.
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction to Case - - 1.67 'C/W
Rth J A J unction-to-Ambient - - 30 soldered to a 2" square copper-clad board
For footnotes refer to the last page
