IRF8915PBF ,20V Dual N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) DDual SO-8 MOSFET for POLconverters in desktop, servers,18.3m
IRF8915PBF-IRF8915TRPBF
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
International
TOR Rectifier
PD -95727A
lRF8915PbF
HEXFET© Power MOSFET
Applications V R
Dual SO-8 MOSFET for POL DSS DS(on) D
converters in desktop, servers, 20V 18_3mQ@VGs = 10V 8.9A
graphics cards, game consoles
and set-top box
q Lead-Free
SI _LLj1- 8-r_tL] D1
G1 2 l 7CD] D1
Benefits S2 IIrf'- l 6m D2
o Ultra-Low Gate Impedance G2 5E”: D2
0 Very Low RDS(on) Top View SO-8
q Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 20 V
VGS Gate-to-Source Voltage t 20
ID @ TA = 25°C Continuous Drain Current, Vas @ 10V 8.9
ID @ TA = 70°C Continuous Drain Current, Vss @ 10V 7.1 A
'DM Pulsed Drain Current (D 71
PD @TA = 25°C Power Dissipation 2.0 W
PD @TA = 70°C Power Dissipation 1.3
Linear Derating Factor 0.016 WPC
To Operating Junction and -55 to + 150 'C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
ROJL Junction-to-Drain Lead - 42 °CNV
ROJA Junction-to-Ambient © _ 62.5
Notes (D through s are on page 10
1
07/23/08
|RF8915PbF International
TOR Rectifier
Static © T, = 25''C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 20 -- -- V Vss = 0V, ID = 250pA
ABVDss/ATJ Breakdown Voltage Temp. Coefficient -- 0.015 -- V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 14.6 18.3 mf2 Ves = 10V, ID = 8.9A ©
- 21.6 27 Vss = 4.5V, ID = 7.1A ©
VGS(1h) Gate Threshold Voltage 1.7 - 2.5 V Vos = Vas, b = 250pA
AVGS(lh)/ATJ Gate Threshold Voltage Coefficient - -4.8 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 16V, Vas = 0V
- - 150 Vros = 16V, Vas = 0V, T, = 125°C
less Gate-to-Source Forward Leakage - - 100 nA VGS = 20V
Gate-to-Source Reverse Leakage - - -1OO I/ss = -20V
gfs Forward Transconductance 12 - - S I/os = 10V, ID = 7.1 A
Qg Total Gate Charge -- 4.9 7.4
0951 Pre-Vth Gate-to-Source Charge -- 1.8 -- VDs = 10V
Qgsz Post-Vth Gate-to-Source Charge - 0.61 - nC Vss = 4.5V
di Gate-to-Drain Charge - 1.7 - ID = 7.1A
ngdr Gate Charge Overdrive - 0.79 - See Fig. 6
Qsw Switch Charge (0952 + di) _ 2.3 -
Qoss Output Charge - 2.7 - nC Vos = 10v, Vas = OV
td(on) Turn-On Delay Time - 6.0 - VDD = 4.5V, l/ss = 4.5V
t, Rise Time - 12 - ns ID = 7.1A
tum) Turn-Off Delay Time - 7.1 - Clamped Inductive Load
t, Fall Time - 3.6 -
Ciss Input Capacitance - 540 - I/ss = 0V
Coss Output Capacitance -- 180 -- pF Vos = 10V
Crss Reverse Transfer Capacitance -- 91 -- f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy © - 15 mJ
|AR Avalanche Current LO - 7.1 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 2.5 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 71 integral reverse 9
(Body Diode) CD p-n junction diode. s
Vso Diode Forward Voltage - - 1.0 V TJ = 25°C, ls = 7.1A, VGS = 0V ©
t,, Reverse Recovery Time - 13 19 ns To = 25°C, IF = 7.1A, VDD = 10V
er Reverse Recovery Charge - 3.5 5.2 nC di/dt = 100A/ps ©
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