IRF8910TRPBF ,20V Dual N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) D Dual SO-8 MOSFET for POLconverters in desktop, servers,13.4m @V ..
IRF8915 ,20V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) DDual SO-8 MOSFET for POLconverters in desktop, servers,18.3m
IRF8910TRPBF
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
International
TOR Rectifier
PD-95673A
lRF8910PbF
HEXFET© Power MOSFET
Applications V R
. Dual SO-8 MOSFET for POL DSS DS(on) D
converters in desktop, servers, 20V 13Amf2@Vas = 10V 10A
graphics cards, game consoles
and set-top box
q Lead-Free
SI nc"- a D33 D1
Benefits G1 L2 l 700 D1
0 Very Low Rosmn) at 4.5V l/ss
s2 mf- 5CD: D2
o Ultra-Low Gate Impedance l /
o Fully Characterized Avalanche Voltage G2 I SEE D2
and Current . Top View SO-8
q 20V VGS Max. Gate Rating
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 20 V
VGS Gate-to-Source Voltage t 20
ID @ TA = 25°C Continuous Drain Current, Vss © 10V 10
ID @ TA = 70°C Continuous Drain Current, Vss @ 10V 8.3 A
IDM Pulsed Drain Current OD 82
PD @TA = 25°C Power Dissipation 2.0 W
PD ©T, = 70°C Power Dissipation 1.3
Linear Derating Factor 0.016 W/°C
TJ Operating Junction and -55 to + 150 "C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
ROJL Junction-to-Drain Lead -- 42 °C/W
ROJA Junction-to-Ambient ©S - 62.5
Notes (D through s are on page 10
1
07/09/08
|RF891OPbF International
TOR Rectifier
Static @ T, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 20 - - V l/ss = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 0.015 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 10.7 13.4 mg l/ss = 10V, ID = 10A ©
- 14.6 18.3 I/ss = 4.5V, lo = 8.0A ©
vGS(th) Gate Threshold Voltage 1.65 - 2.55 V Vos = Vas, ID = 250pA
AVGS(th)/ATJ Gate Threshold Voltage Coefficient - -4.8 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 16V, Vas = 0V
- - 150 Vros =16V,Vas = ov, T: = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
gfs Forward Transconductance 24 -- -- S Vos = 10V, ID = 8.2A
a, Total Gate Charge - 7.4 11
As, Pre-Vth Gate-to-Source Charge - 2.4 - Vos = 10V
Ass Post-Vth Gate-to-Source Charge - 0.80 - nC l/ss = 4.5V
di Gate-to-Drain Charge - 2.5 - ID = 8.2A
ngdr Gate Charge Overdrive - 1.7 - See Fig. 6
st Switch Charge (0952 + di) - 3.3 -
Qoss Output Charge - 4.4 - nC Vos = 10V, Vas = 0V
tum) Turn-On Delay Time - 6.2 - VDD = 10V, Vas = 4.5V
t, Rise Time - IO - ns ID = 8.2A
td(off) Turn-Off Delay Time - 9.7 - Clamped Inductive Load
tt Fall Time - 4.1 -
Ciss Input Capacitance -- 960 - Vss = 0V
Coss Output Capacitance - 300 -- pF Vos = 10V
Crss Reverse Transfer Capacitance - 160 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy Q) - 19 mJ
IAR Avalanche Current 0) _ 8.2 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 2.5 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 82 integral reverse G
(Body Diode) CD p-n junction diode. S
Vso Diode Forward Voltage - - 1.0 V To = 25°C, IS = 8.2A, vss = 0V ©
tn Reverse Recovery Time - 17 26 ns TJ = 25°C, IF = 8.2A, VDD = 10V
l Reverse Recovery Charge - 6.5 9.7 no di/dt = 100A/ps ©
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