IRF8910 ,20V Dual N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) D Dual SO-8 MOSFET for POLconverters in desktop, servers,13.4m @V ..
IRF8910PBF , HEXFET Power MOSFET
IRF8910TRPBF ,20V Dual N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max IDSS DS(on) D Dual SO-8 MOSFET for POLconverters in desktop, servers,13.4m @V ..
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IRF8910
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
International
Tait Rectifier
PD - 95868
IRF8910
HEXFETO Power MOSFET
A lications
o prual SO-8 MOSFET for POL VDSS Fhosion) max ID
com(e.rters In desktop, servers, 20V 13.4mQ@VGS = 10V 10A
graphics cards, game consoles
and set-top box
SI nr)1- l 8 CED D1
Benefits G1 2 , f MU D1
0 Very Low RDSW) at 4.5V l/ss 3 6
o Ultra-Low Gate Impedance S2 ITE]"- l / :1an
q Fully Characterized Avalanche Voltage G2 4 5m D2
and Current Top View SO-8
0 20V l/tss Max. Gate Rating
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 20 V
vss Gate-to-Source Voltage , 20
ID © TA = 25°C Continuous Drain Current, Vss @ 10V 10
ID @ TA = 70°C Continuous Drain Current, l/as @ 10V 8.3 A
IDM Pulsed Drain Current CD 82
PD @TA = 25°C Power Dissipation 2.0 W
PD @TA = 70°C Power Dissipation 1.3
Linear Derating Factor 0.016 W/°C
Tu Operating Junction and -55 to + 150 ''C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
ROJL Junction-to-Drain Lead - 20 °C/W
ROJA Junction-to-Ambient ©6) - 62.5
Notes co through co are on page 10
4/28/04
IRF8910 International
TOR Rectifier
Static © T, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDss Drain-to-Source Breakdown Voltage 20 - - V Vas = 0V, ID = 250pA
ABVDss/ATJ Breakdown Voltage Temp. Coefficient - 0.015 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 10.7 13.4 mg Vss = 10V, ID = 10A ©
- 14.6 18.3 Vss = 4.5V, ID = 8.0A ©
VGS(th) Gate Threshold Voltage 1.65 - 2.55 V l/rss = Vss, ID = 250PA
AVGS(1h)/ATJ Gate Threshold Voltage Coefficient - -4.8 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 16V, Ves = 0V
-- -- 150 Vos = 16V, Vss = OV, T, = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
gfs Forward Transconductance 24 - - S Vos = 10V, ID = 8.2A
q, Total Gate Charge - 7.4 11
0951 Pre-Vth Gate-to-Source Charge - 2.4 - Vos = 10V
Ass Post-Vth Gate-to-Source Charge - 0.80 - nC Vas = 4.5V
an Gate-to-Drain Charge - 2.5 - ID = 8.2A
ngdr Gate Charge Overdrive - 1.7 - See Fig. 6
st Switch Charge (oss + 09d) - 3.3 -
Qoss Output Charge - 4.4 - nC l/rs = 10V, Vss = 0V
1am) Turn-On Delay Time - 6.2 - VDD = 10V, Vss = 4.5V
t, Rise Time -- 10 -- ns ID = 8.2A
td(orr) Turn-Off Delay Time -- 9.7 - Clamped Inductive Load
t, Fall Time - 4.1 -
Ciss Input Capacitance - 960 - Vss = 0V
Coss Output Capacitance - 300 - pF Vos = 10V
Crss Reverse Transfer Capacitance - 160 - f = 1.0MH2
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy © _ 19 mJ
|AR Avalanche Current LO _ 8.2 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 2.5 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 82 integral reverse 6
(Body Diode) CO p-n junction diode. S
Vso Diode Forward Voltage - - 1.0 V TJ = 25°C, ls = 8.2A, l/ss = 0V ©
tn Reverse Recovery Time - 17 26 ns TJ = 25°C, IF = 8.2A, Vor, = 10V
l Reverse Recovery Charge -- 6.5 9.7 no di/dt = 100A/ps ©
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