IRF8736 ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R maxQg Typ.DSS DS(on) Synchronous MOSFET for Notebook4.8m
IRF8736-IRF8736TRPBF
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD - 97120
International
TOR Rectifier IRF8736PbF
HEXFET© Power MOSFET
Applications VDss RDs(on) max tag Typ.
o Synchronous MOSFET for Notebook
ProcessorPower 30V 4.8mf2@Vas=10V 17nC
o Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
s EED‘ ' B D
Benefits s £1112 H 7:113 D
q Very Low RDS(on) at 4.5V l/ss S EED3 W 6m D
o Low Gate Charge G m4 5m D
o Fully Characterized Avalanche Voltage
and Current Top View SO-8
q 100% Tested for Rs
q Lead -Free
Absolute Maximum Ratings
Parameter Max. Units
Vros Drain-to-Source Voltage 30 V
l/ss Gate-to-Source Voltage * 20
ID @ T, = 25°C Continuous Drain Current, Vas @ 10V 18
ID @ TA = 70°C Continuous Drain Current, Veg © 10V 14.4 A
IDM Pulsed Drain Current © 144
PD @TA = 25°C Power Dissipation © 2.5 W
PD OT, = 70°C Power Dissipation G) 1.6
Linear Derating Factor 0.02 W/°C
Tu Operating Junction and -55 to + 150 ''C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
ROJL Junction-to-Drain Lead s - 20 °C/W
ROJA Junction-to-Ambient C90) - 50
Notes co through co are on page 9
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08/1/07
IRF8736PbF
International
TOR Rectifier
Static a To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V I/ss = 0V, lo = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 0.022 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 3.9 4.8 mg Vas = 10V, b = 18A ©
- 5.5 6.8 Vas = 4.5V, ID =14.4A ©
VGS(th) Gate Threshold Voltage 1.35 1.8 2.35 V Vos = Vss, ID = 50pA
AVGS(th) Gate Threshold Voltage Coefficient - -6.1 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 PA l/rs = 24V, Vss = 0V
-- -- 150 VDs = 24V, Vss = 0V, T: = 125°C
less Gate-to-Source Forward Leakage -- -- 100 nA l/ss = 20V
Gate-to-Source Reverse Leakage - - -1OO l/ss = -20V
gfs Forward Transconductance 52 --.- - S Vos = 15V, ID = 14.4A
09 Total Gate Charge - 17 26
As, Pre-Vth Gate-to-Source Charge - 4.4 - Vos = 15V
0952 Post-Vth Gate-to-Source Charge - 1.9 - nC I/ss = 4.5V
di Gate-to-Drain Charge - 5.8 - ID = 14.4A
ngdr Gate Charge Overdrive - 4.9 - See Fig. 16
st Switch Charge (0952 + di) - 7.7 -
Qoss Output Charge - 7.1 - nC I/os = 10V, Vss = 0V
Re Gate Resistance - 1.3 2.2 Q
td(on) Turn-On Delay Time -- 12 -- VDD = 15V, Vss = 4.5V ©
t, Rise Time -- 15 -- ID = 14.4A
td(off) Turn-Off Delay Time - 13 - ns Rs = 1 .89
t, Fall Time - 7.5 - See Fig. 14
Ciss Input Capacitance - 2315 - l/ss = 0V
Cass Output Capacitance - 449 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 219 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy © - 126 mJ
|AR Avalanche Current LO _ 14.4 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 3.1 MOSFET symbol D
(Body Diode) A showing the Lt
ISM Pulsed Source Current - - 144 integral reverse 6 Il
(Body Diode) CD p-n junction diode. q
Vso Diode Forward Voltage -- -- 1.0 v T J = 25°C, ls = 14.4A, VGS = ov ©
tn Reverse Recovery Time - 16 24 ns TJ = 25°C, IF = 14.4A, VDD = 10V
l Reverse Recovery Charge - 19 29 nC di/dt = 300A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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