IRF8734TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R maxQg (typ.)DSS DS(on) Synchronous MOSFET for Notebook3.5m @V = 10V30V
IRF8734TRPBF
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD - 96226
International
TOR Rectifier IRF8734PbF
H EXFET© Power MOSFET
Applications V R max
q Synchronous MOSFET for Notebook DSS DS(on) Qg (typ.)
Processor Power 30V 3.5mf2@Vas = 10V 20nC
o Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
. s EED‘ B D
Benefits 2 7
s [:11] B CD] D
0 Very Low RDS(on) at 4.5V l/ss l r
s m3 f 61333 D
q Low Gate Charge
o Fully Characterized Avalanche Voltage G 3'34 5m D
and Current Top View SO-8
0 100% Tested for Rs
q Lead-Free
Absolute Maximum Ratings
Parameter Max. Units
Vros Drain-to-Source Voltage 30 V
l/ss Gate-to-Source Voltage i 20
ID @ TA = 25°C Continuous Drain Current, Vss © 10V 21
ID @ TA = 70°C Continuous Drain Current, Vss © 10V 17 A
IDM Pulsed Drain Current C) 168
PD @TA = 25°C Power Dissipation (E) 2.5 W
PD @TA = 70°C Power Dissipation (4C) 1.6
Linear Derating Factor 0.02 W/°C
TJ Operating Junction and -55 to + 150 ''C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
ROJL Junction-to-Drain Lead © - 20 o C AV
RNA Junction-to-Ambient © -- 50
Notes co through S are on page 10
ORDERING INFORMA TION:
See detailed ordering and shipping information on the last page of this data sheet.
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2/12/09
IRF8734PbF
International
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVoss Drain-to-Source Breakdown Voltage 30 - - V Vss = 0V, ID = 250PA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 0.023 - V/°C Reference to 25°C, lo = 1mA
Rom”) Static Drain-to-Source On-Resistance _- :1: 2: mn V: , 195$,ITD;211_;:(:
Vesm) Gate Threshold Voltage 1.35 1.80 2.35 V Vos = Vas, ID = 50p A
AVGsuh) Gate Threshold Voltage Coefficient - -6.5 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 A Vos = 24V, Vas = 0V
_ _ 150 y vDs = 24v, Vas = OV, TJ = 125°C
less Gate-to-Source Forward Leakage -- -- 100 n A VGs = 20V
Gate-to-Source Reverse Leakage -- -- -1OO Vss = -20V
gfs Forward Transconductance 85 - - S VDs = 15V, ID = 17A
q, Total Gate Charge - 20 30
agsl Pre-Vth Gate-to-Source Charge - 5.2 - VDs = 15V
As Post-Vth Gate-to-Source Charge - 2.3 - nC Ves = 4.5V
di Gate-to-Drain Charge - 6.9 - lo = 17A
ngdr Gate Charge Overdrive - 5.4 - See Figs. 16a &16b
st Switch Charge (Qgsg + di) - 9.2 -
Qoss Output Charge - 15 - nC VDs = 16V, Vas = 0V
RG Gate Resistance - 1.7 3.1 Q
ton) Turn-On Delay Time - 13 - VDD = 15V, Vas = 4.5V ©
t, Rise Time -- 16 -- ns ID = 17A
tom Turn-Off Delay Time -- 15 - Rs = 1.89
t, Fall Time - 8.0 - See Figs. 15a &15b
Ciss Input Capacitance - 3175 - Ves = 0V
Coss Output Capacitance - 627 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 241 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy © - 216 md
IAR Avalanche Current CD - 17 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFET symbol D
. - - 3.1 . F
(Body Diode) A showing the E
ISM Pulsed Source Current - _ 168 integral reverse G E
(Body Diode) CO p-n junction diode. g
Vso Diode Forward Voltage -- -- 1.0 V TJ = 25°C, Is = 17A, l/tss = 0V ©
trr Reverse Recovery Time -- 20 30 ns TJ = 25°C, IF = 17A, VDD = 15V
l Reverse Recovery Charge -- 25 38 nC di/dt = 345A/ps ©
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