IRF8721GTRPBF ,Halogen Free and Lead Free 30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageapplications.Absolute Maximum RatingsParameter Max. UnitsVDS Drain-to-Source Voltage 30VV Gate-to-S ..
IRF8721TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageapplications.Absolute Maximum RatingsParameter Max. UnitsV Drain-to-Source Voltage 30 VDSV Gate-to- ..
IRF8734TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R maxQg (typ.)DSS DS(on) Synchronous MOSFET for Notebook3.5m @V = 10V30V
IRF8721GTRPBF
Halogen Free and Lead Free 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
International
TOR Rectifier
Applications
q Control MOSFET of Sync-Buck
Converters used for Notebook Processor
q Control MOSFET for Isolated DC-DC
Converters in Networking Systems
Benefits
q Very Low Gate Charge
0 Low RDS(on) at 4.5V l/ss
q Low Gate Impedance
q Fully Characterized Avalanche Voltage
and Current
20V I/os Max. Gate Rating
q Lead-Free
o Halogen-Free
Description
PD - 96262
IRF8721GPbF
HEXFET© Power MOSFET
Voss RDS(on) max 09
30V 8.5mQ@VGS = 10V 8.3nC
SEED‘ “3310
SEEDZ H 7:110
SEED3 W SID D
G m1“ 5:310
Top View SO-8
The IRF8721GPbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the
industry standard SO-8 package The IRF8721GPbF has been optimized for parameters that are
critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC
converters that power the latest generation of processors for Notebook and Netcom applications.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage i 20
ID @ TA = 25°C Continuous Drain Current, Vas @ 10V 14
ID @ TA = 70°C Continuous Drain Current, Vss © 10V 11 A
los, Pulsed Drain Current co 110
Pro @TA = 25°C Power Dissipation 2.5 W
PD @TA = 70°C Power Dissipation 1.6
Linear Derating Factor 0.02 WPC
T J Operating Junction and -55 to + 150 °C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
RDJL Junction-to-Drain Lead s - 20
RNA Junction-to-Ambient © _ 50 C/W
Notes co through co are on page 9
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07/10/09
IRF8721GPbF
International
TOR Rectifier
Static © T, = 25''C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V l/ss = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 0.021 - VPC Reference to 25°C, ID = 1mA
RDSW, Static Drain-to-Source On-Resistance -- 6.9 8.5 m9 Vss = 10V, ID = 14A ©
- 10.6 12.5 Vss=4.5V, ID=11A ©
VGSW Gate Threshold Voltage 1.35 - 2.35 V Vos = Vas, ID = 25pA
AVGsuh) Gate Threshold Voltage Coefficient - -6.2 - mV/°C
loss Drain-to-Source Leakage Current -- -- 1.0 PA Vos = 24V, Vss = 0V
- - 150 Vos = 24V, Vss = 0V, To = 125°C
less Gate-to-Source Forward Leakage - - 100 nA I/ss = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
gfs Forward Transconductance 27 -- - S Vos = 15V, ID = 11A
Qg Total Gate Charge - 8.3 12
0951 Pre-Vth Gate-to-Source Charge - 2.0 - Vos = 15V
0952 Post-Vth Gate-to-Source Charge - 1.0 - nC VGS = 4.5V
di Gate-to-Drain Charge - 3.2 - ID = 11A
ngd, Gate Charge Overdrive - 2.0 - See Fig. 16a and 16b
st Switch Charge (0952 + di) - 4.2 -
Qoss Output Charge - 5.0 - nC VDS = 16V, Vas = 0V
Ra Gate Resistance - 1.8 3.0 Q
tam") Turn-On Delay Time - 8.2 - VDD = 15V, l/ss = 4.5V
tr Rise Time - 11 - b =11A
td(off) Turn-Off Delay Time - 8.1 - ns Ra = 1.89
t, Fall Time - 7.0 - See Fig. 15a
Ciss Input Capacitance - 1040 - Ves = 0V
Coss Output Capacitance - 229 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 114 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy © - 68 mJ
|AR Avalanche Current C) _ 11 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 3.1 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 112 integral reverse G
(Body Diode) CO p-n junction diode. S
Vso Diode Forward Voltage - - 1.0 V Tu = 25°C, ls = 11A, Vss = 0V ©
tn Reverse Recovery Time -- 14 21 ns TJ = 25°C, IF = 11A, VDD = 15V
Qrr Reverse Recovery Charge - 15 23 nC di/dt = 300A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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