IRF8721TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageapplications.Absolute Maximum RatingsParameter Max. UnitsV Drain-to-Source Voltage 30 VDSV Gate-to- ..
IRF8734TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R maxQg (typ.)DSS DS(on) Synchronous MOSFET for Notebook3.5m @V = 10V30V
IRF8721-IRF8721TRPBF
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
International
TOR Rectifier
Applications
0 Control MOSFET of Sync-Buck
Converters used for Notebook Processor
q Control MOSFET for Isolated DC-DC
Converters in Networking Systems
Benefits
Very Low Gate Charge
Low RDS(on) at 4.5V l/ss
Low Gate Impedance
Fully Characterized Avalanche Voltage
and Current
20V I/tss Max. Gate Rating
o Lead-Free
Description
PD -97119
IRF8721PbF
HEXFET® Power MOSFET
RDS(on) max
8.5mQ@VGS = 10V
t3_Lld
Top View
The IRF8721PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the
industry standard SO-8 package The IRF8721PbF has been optimized for parameters that are
critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduc-
tion and switching losses. The reduced total losses make this product ideal for high efficiency
DC-DC converters that power the latest generation of processors for Notebook and Netcom
applications.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 30 V
Vas Gate-to-Source Voltage t 20
ID @ TA = 25°C Continuous Drain Current, Ves @ 10V 14
ID @ TA = 70°C Continuous Drain Current, Ves @ 10V 11 A
lm, Pulsed Drain Current C) 110
PD @TA = 25°C Power Dissipation 2.5 W
PD @TA = 70°C Power Dissipation 1.6
Linear Derating Factor 0.02 W/°C
To Operating Junction and -55 to + 150 "C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
' Junction-to-Drain Lead s - 20 °CNV
Ross Junction-to-Ambient (DCS) _ 50
Notes co through s are on page 9
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07/30/07
IRF8721PbF
International
TOR Rectifier
Static @ T, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V Vas = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 0.021 - V/°C Reference to 25°C, ID = 1mA
RDSW, Static Drain-to-Source On-Resistance -- 6.9 8.5 m9 Vss = 10V, ID = 14A ©
- 10.6 12.5 Vss=4.5V, |D=11A ©
VGsm Gate Threshold Voltage 1.35 - 2.35 V I/os = Vas, ID = 25pA
AVGSM Gate Threshold Voltage Coefficient - -6.2 - mV/°C
loss Drain-to-Source Leakage Current -.-.- -.-.- 1.0 PA Vrys = 24V, Vss = 0V
- - 150 Vos = 24V, Vss = OV, T, = 125°C
IGSS Gate-to-Source Forward Leakage - - 100 nA Vas = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
gts Forward Transconductance 27 - - S Vrys = 15V, ID = 11A
a, Total Gate Charge - 8.3 12
0951 Pre-Vth Gate-to-Source Charge - 2.0 - Vos = 15V
aes Post-Vth Gate-to-Source Charge - 1.0 - nC VGS = 4.5V
di Gate-to-Drain Charge - 3.2 - ID = 11A
Ogodr Gate Charge Overdrive - 2.0 - See Fig. 16a and 16b
st Switch Charge (0952 + di) - 4.2 -
Qoss Output Charge - 5.0 - nC l/rss = 16V, Vas = 0V
Rs Gate Resistance - 1.8 3.0 Q
tum) Turn-On Delay Time - 8.2 - VDD = 15V, l/ss = 4.5V
t, Rise Time - 11 - b =11A
td(ott) Turn-Off Delay Time - 8.1 - ns Ra = 1.89
t, Fall Time - 7.0 - See Fig. 15a
Ciss Input Capacitance - 1040 - Ves = 0V
Coss Output Capacitance - 229 - pF Vos = 15V
c,, Reverse Transfer Capacitance - 114 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy © - 68 mJ
IAR Avalanche Current C) - 11 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 3.1 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 112 integral reverse G
(Body Diode) T p-n junction diode. S
Vso Diode Forward Voltage - - 1.0 V To = 25°C, ls = 11A, VGS = 0V ©
tr, Reverse Recovery Time - 14 21 ns TJ = 25°C, IF = 11A, VDD = 15V
Qrr Reverse Recovery Charge - 15 23 nC di/dt = 300A/ps S
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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