IRF8714TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageIRF8714PbF
IRF8721 ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageIRF8721PbFHEXFET Power MOSFET
IRF8721GTRPBF ,Halogen Free and Lead Free 30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageapplications.Absolute Maximum RatingsParameter Max. UnitsVDS Drain-to-Source Voltage 30VV Gate-to-S ..
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IRF8734TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R maxQg (typ.)DSS DS(on) Synchronous MOSFET for Notebook3.5m @V = 10V30V
IRF8714-IRF8714TRPBF
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD-96116
International
TOR Rectifier IRF8714PbF
Applications HEXFET© Power MOSFET
q Control MOSFET of Sync-Buck
Converters used for Notebook VDSS RDS(On) max tity
ProCessorPower 30V 8.7mg2@sz = 10V 8.1 nC
0 Control MOSFET for Isolated DC-DC
Converters in Networking Systems
Benefits
Very LowGate Charge 35m .8333.)
Very Low RDS(on) at 4.5V VGS
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage
and Current
20V l/ss Max. Gate Rating Top View SO-8
100% tested for Rg
q Lead-Free
Description
The lRF8714PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the
industry standard SO-8 package. The IRF8714PbF has been optimized for parameters that are
critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC
converters that power the latest generation of processors for Notebook and Netcom applications.
SEEDZ 7:110
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage 1 20
ID @ T, = 25°C Continuous Drain Current, Vas © 10V 14
ID @ TA = 70°C Continuous Drain Current, Vss @ 10V 11 A
IDM Pulsed Drain Current C) 110
PD ©T, = 25°C Power Dissipation 2.5 W
PD ©T, = 70°C Power Dissipation 1.6
Linear Derating Factor 0.02 W/°C
TJ Operating Junction and -55 to + 150 ''C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
ROJL Junction-to-Drain Lead s _ 20 "C/W
ROJA Junction-to-Ambient C9C9 _ 50
Notes C) through 6) are on page 9
WWW. i rf.com 1
08/01/06
|RF8714PbF
International
TOR Rectifier
Static @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V Vss = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient -- 0.021 -- VPC Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance -- 7.1 8.7 mn Vos = 10V, ID = 14A oo
- 10.9 13 VGS=4.5V, b--11A0)
VGS(th) Gate Threshold Voltage 1.35 1.80 2.35 v Vos = Vss, ID = 25pA
AVesuh) Gate Threshold Voltage Coefficient - -6.0 - mV/°C Vos = Vas, ID = 25pA
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 24V, Vas = 0V
- - 150 Vos = 24V, Vas = 0V, T, = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vas = 20V
Gate-to-Source Reverse Leakage - - -1OO Vas = -20V
gfs Forward Transconductance 71 - - S Vos = 15V, ID = 11A
09 Total Gate Charge - 8.1 12
0951 Pre-Vth Gate-to-Source Charge - 1.9 - I/rss = 15V
Ass Post-Vth Gate-to-Source Charge -- 1.0 -- nC Vss = 4.5V
di Gate-to-Drain Charge - 3.0 -- ID = 11A
ngdr Gate Charge Overdrive --.- 2.2 - See Figs. 15 & 16
st Switch Charge (0952 + di) - 4.0 -
Qoss Output Charge - 4.8 - nC Vos = 16V, l/ss = 0V
R, Gate Resistance - 1.6 2.6 Q
tam) Turn-On Delay Time - 10 - VDD = 15V, Vss = 4.5V
t, Rise Time - 9.9 - ID =11A
tam) Turn-Off Delay Time - 11 - ns Rs = 1.89
tf Fall Time - 5.0 - See Fig. 18
Ciss Input Capacitance - 1020 - Vss = ov
Coss Output Capacitance - 220 - pF I/rss = 15V
Crss Reverse Transfer Capacitance -- 110 -- f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy Q) - 65 mJ
|AR Avalanche Current LO - 11 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - --- 3.1 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 110 integral reverse G
(Body Diode) CD p-n junction diode. S
Vso Diode Forward Voltage - - 1.0 V To = 25°C, ls = 11A, l/ss = 0V ©
tn Reverse Recovery Time - 14 21 ns To = 25°C, IF = 11A, VDD = 15V
er Reverse Recovery Charge - 15 23 no di/dt = 300A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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