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IRF8707GTRPBF
Halogen Free and Lead Free 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD - 96264
International
TOR Rectifier IRF8707GPbF
Applications HEXFET© Power MOSFET
0 Control MOSFET of Sync-Buck
Converters used for Notebook Voss RDS(On) max Clg
Processor Power 30V 11.9mg2@vGS =10V 6.2nC
q Control MOSFET for Isolated
DC-DC Converters in Networking
Systems
Benefits
q Very Low Gate Charge s E1 ' HE D
Very Low RDS(on) at 4.5V Vas S EEDZ 7113 D
Ultra-Low Gate Impedance s ma
Fully Characterized Avalanche Voltage
and Current
20V VGS Max. Gate Rating Top View SO-8
100% tested for Rg
Lead-Free
Halogen-Free
Description
The IRF8707GPbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the
industry standard SO-8 package. The IRF8707GPbF has been optimized for parameters that are
critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC
converters that power the latest generation of processors for notebook and Netcom applications.
Absolute Maximum Ratings
GEE“ 53110
Parameter Max. Units
Vos Drain-to-Source Voltage 30 V
l/ss Gate-to-Source Voltage 1 20
ID @ TA = 25°C Continuous Drain Current, Vas @ 10V 11
ID © T, = 70°C Continuous Drain Current, Vas @ 10V 9.1 A
'DM Pulsed Drain Current (D 88
PD @TA = 25°C Power Dissipation 2.5 W
PD @TA = 70°C Power Dissipation 1.6
Linear Derating Factor 0.02 W/°C
T J Operating Junction and -55 to + 150 ''C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
ROJL Junction-to-Drain Lead s _ 20
RM Junction-to-Ambient © _ 50 C/W
Notes co through S are on page 9
1
07/10/09
|RF8707GPbF
International
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V Vss = 0V, ID = 250uA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient __- 0.022 -.-_ V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance -- 9.3 11.9 Vss = 10V, ID = 11A oo
--.- 14.2 17.5 mg Vss = 4.5V, ID = 8.8A ©
Vssith) Gate Threshold Voltage 1.35 1.80 2.35 V Vos = Vas, ID = 25pA
Avesuh) Gate Threshold Voltage Coefficient - -5.8 - mV/°C Vos = Vas, ID = 25pA
loss Drain-to-Source Leakage Current - - 1.0 Vos = 24V, l/ss = 0V
- - 150 PA I/os = 24V, Vas = OV, T, = 125°C
less Gate-to-Source Forward Leakage - - 100 I/ss = 20V
Gate-to-Source Reverse Leakage - - -100 nA VGS = -20V
gfs Forward Transconductance 25 - - S VDS = 15V, ID = 8.8A
q, Total Gate Charge - 6.2 9.3
0951 Pre-Vth Gate-to-Source Charge - 1.4 - Vos = 15V
Asa Post-Vth Gate-to-Source Charge -- 0.7 -- Vss = 4.5V
di Gate-to-Drain Charge -- 2.2 -- "C ID = 8.8A
ngdr Gate Charge Overdrive -- 1.9 -- See Figs. 15 & 16
st Switch Charge (0952 + di) --.- 2.9 -
Qoss Output Charge - 3.7 - nC Vos = 16V, l/ss = 0V
R, Gate Resistance - 2.2 3.7 Q
tum) Turn-On Delay Time - 6.7 - VDD = 15V, I/ss = 4.5V
t, Rise Time - 7.9 - ID = 8.8A
tum) Turn-Off Delay Time - 7.3 - ns Rs = 1.89
tf Fall Time - 4.4 - See Fig. 18
Ciss Input Capacitance - 760 - VGS = ov
Coss Output Capacitance - 170 - pF Vos = 15V
Crss Reverse Transfer Capacitance -.r.-_ 82 -..-_ f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy (2) _ 53 mJ
IAR Avalanche Current LO _ 8.8 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current -- -- 3 1 A MOSFET symbol D
(Body Diode) . showing the
ISM Pulsed Source Current - - 88 A integral reverse G
(Body Diode) OD p-n junction diode. S
Vso Diode Forward Voltage - - 1.0 V To = 25°C, Is = 8.8A, vas = 0V ©
tn Reverse Recovery Time - 12 18 ns Tu = 25°C, IF = 8.8A, VDD = 15V
er Reverse Recovery Charge - 13 20 nC di/dt = 300A/ps a
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
