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IRF840S-IRF840STRR
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
(International
Isak Rectifier
PD-9.1013
|RF84OS
HEXFET® Power MOSFET
0 Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
o Repetitive Avalanche Rated
o Fast Switching
0 Ease of Paralleling
0 Simple Drive Requirements
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
VDSS = 500V
RDS(on) = 0.859
ID = 8.0A
on-resistance and cost-etfectiveness.
The SMD-220 is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The SMD-22O
is suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
SMD-22O
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, I/ss @ 10 V 8.0
to @ To = 100°C Continuous Drain Current, I/tss © 10 V 5.1 A
IDM Pulsed Drain Current C) 32
pr, @ To = 25°C Power Dissipation 125 W
Po © TA = 25°C Power Dissipation (PCB Mount)" 3.1
Linear Derating Factor 1.0 W PC
Linear Derating Factor (PCB Mount)" 0.025
Ves Gate-to-Source Voltage i20 V
EAS Single Pulse Avalanche Energy Q) 510 mJ
IAR Avalanche Current C) 8.0 A
EAR Repetitive Avalanche Energy co 13 md
dv/dt Peak Diode Recovery dv/dt © 3.5 V/ns
TJ, Tsrs Junction and Storage Temperature Range -55 to +150 y =
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Min, Typ. Max. Units
RM; Junction-to-Case - - 1 .0
Rm Junction-to-Ambient (PCB mount)" - - 4o °C/W
Rm Junction-to-Ambient - - 62
** When mounted on I" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
( IRF84OS
Electrical Characteristics tii) Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 500 - - V VGs=0V, ID: 250PA
AV(BR)D55/ATJ Breakdown Voltage Temp. Coefficient - 0.78 - V/°C Reference to 25°C, In: 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 0.85 Q Vss=10V, 10:4.8A ©
Vesuh) Gate Threshold Voltage 2.0 - 4.0 V VDS=VGs, ID: 250WA
ggs Forward Transconductance 4.9 - - S Vos=50V, |D=4.8A ©
loss Drain-to-Source Leakage Current - - 25 [LA VDs=500V, VGS=OV
- - 250 Vos=400V, Ves=OV, TJ=125°C
less Gate-to-Source Forward Leakage - - 100 n A Ves=20V
Gate-to-Source Reverse Leakage - - -100 Ves=-20V
q, Total Gate Charge - - 63 10:8.0A
Qgs Gate-to-Source Charge - - 9.3 nC Vos=400V
di Gate-to-Drain ("Miller") Charge - - 32 VGs=10V See Fig. 6 and 13 Ct)
tam) Turn-On Delay Time - 14 - VDD=250V
tr Rise Time - 23 - ns 10:8.0A
two") Turn-Off Delay Time - 49 - Re=9.1Q
t: Fall Time - 20 - RD=31Q See Figure 10 (io
Lo Internal Drain Inductance - 4.5 - i2t"ii.iti1nd.') D
nH from package GAE
Ls Internal Source Inductance - 7.5 - and center 6f
die contact s
Ciss Input Capacitance - 1300 - Vss=0V
Coss Output Capacitance - 310 - pF Vos= 25V
Crss Reverse Transfer Capacitance - 120 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current - - 8 0 MOSFET symbol D
(Body Diode) . A showing the F71)
ISM Pulsed Source Current - - 32 integral reverse G (trl,
(Body Diode) Ci) p-n junction diode. s
Vso Diode Forward Voltage - - 2.0 V TJ=25°C, Is=8.0A, Vss=OV (ii)
trr Reverse Recovery Time - 460 970 ns TJ=25°C, Ip=8.0A
er Reverse Recovery Charge - 4.2 8.9 PC di/dt=100A/ps (4)
ton Forward Tum-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LoU
Notes:
Ci) Repetitive rating; pulse width limited by
max. junction temperature (See Figure II)
© VDD=50V, starting TJ=25°C, L=14mH
RG=25§2, IAs=8.0A (See Figure 12)
TJS1 50°C
© ISDS8.0A, di/dtS1OOA/ps, Vrxv-tV(sn)oss,
(ii) Pulse width 5 300 ps; duty cycle 52%.
