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IRF840LCL-IRF840LCSTRL
500V Single N-Channel HEXFET Power MOSFET in a TO-262 package
International
TOR Rectifier
PD- 93766
IRF840LCS
IRF840LCL
HEXFET® Power MOSFET
Ultra Low Gate Charge
Reduced Gate Drive Requirement
Enhanced 30V VGs Rating
Reduced Css, Cosa CRSS
Extremely High Frequency Operation
Repetitive Avalanche Rated
Description
This new series of low charge HEXFET8power MOSFETs
VDSS = 500V
RDS(on) = 0.850
ID = 8.0A
achieve significant lower gate charge over conventional
MOSFETs. Utilizing the new LCDMOS (low charge
device MOSFETs) technology, the device improvements
are achieved without added product cost, allowing for
reduce gate drive requirements and total system savings.
In addition, reduced switching losses and improved
efficiency and achievable in a variety of high frequency
applications. Frequencies of a few MHz at high current
are possible using the new low charge MOSFETs.
These device improvements combined with the proven
ruggedness and reliability that characterize of HEXFET ciil'21s J/tie,
power MOSFETs offer the designer a new power
transistor standard for switching applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGs @ 10V© 8.0
ID @ Tc = 100°C Continuous Drain Current, N/ss @ 10V© 5.1 A
IDM Pulsed Drain Current (D6) 28
Pro @TA = 25°C Power Dissipation 3.1 W
Po @Tc = 25°C Power Dissipation 125 W
Linear Derating Factor 1.0 W/°C
VGs Gate-to-Source Voltage i 30 V
EAS Single Pulse Avalanche Energy,© 510 mJ
IAR Avalanche Current© 8.0 A
EAR Repetitive Avalanche Energyc0 13 mJ
dv/dt Peak Diode Recovery dv/dt ©© 3.5 V/ns
T J Operating Junction and -55 to + 150
Tsms Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Typ. Max. Units
Rch Junction-to-Case - 1.0 o
RNA Junction-to-Ambient (PCB Mounted,steady-state ** - 40 CMI
www.Irf.com 1
1/3/2000
IRF840LCS/LCL International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BRpss Drain-to-Source Breakdown Voltage 500 - - V N/ss = 0V, ID = 250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient - 0.63 - V/°C Reference to 25°C, ID = 1mA©
Roam) Static Drain-to-Source On-Resistance - - 0.85 Q VGS = 10V, ID = 4.8A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = VGS, ID = 250pA
gig Forward Transconductance 4.0 - - S Vos = 50V, ID = 4.8A©
loss Drain-to-Source Leakage Current - - 25 pA N/rss = 500V, VGS = 0V
- - 250 Vros = 400V, VGS = 0V, To = 125°C
less Gate-to-Source Forward Leakage - - 100 n A l/ss = 20V
Gate-to-Source Reverse Leakage - - -100 VGs=-2OV
% Total Gate Charge - - 39 ID = 8.0A
Qgs Gate-to-Source Charge - - 10 n0 Vos = 400V
di Gate-to-Drain ("Miller") Charge - - 19 VGS = 10V, See Fig. 6 and 13 ©S
tam”) Turn-On Delay Time - 12 - VDD = 250V
tr Rise Time - 25 - ns ID = 8.0A
tum) Turn-Off Delay Time - 27 - Rs = 9.19
tf Fall Time - 19 - RD = 309, See Fig. 10 (4)(9
Ls Internal Source Inductance - 7.5 - nH Between lead, .
and center of die contact
Ciss Input Capacitance - 1100 - VGS = 0V
CDSS Output Capacitance - 170 - pF V93 = 25V
Crss Reverse Transfer Capacitance - 18 - f = 1.0MHz, See Fig. 56)
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 8.0 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) OD(9 - - 28 p-n junction diode. s
VSD Diode Forward Voltage - - 2.0 V TJ = 25°C. Is = 8.0A, VGS = 0V ©
tn Reverse Recovery Time - 490 740 ns To = 25°C, IF = 8.0A
Qrr Reverse Recovery Charge - 3.0 4.5 pC di/dt=100A/ps (96)
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by L3+LD)
Notes:
C) Repetitive rating; pulse width limited by © Pulse width 3 300ps; duty cycle S 2%.
max. junction temperature. (See fig. 11)
© Starting To = 25°C, L = 14mH © Uses |RF840LC data and test conditions
Rs = Mn, IAS = 8.0A. (See Figure 12)
© ISD s 8.0A, di/dt s 100Alps, VDD s V(BR)ross,
TJ s 150°C
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended soldering techniques refer to application note #AN-994.
2 vm~w.irf.oom
