IRF840B ,500V N-Channel MOSFETIRF840B/IRFS840BNovember 2001IRF840B/IRFS840B500V N-Channel MOSFET
IRF840I , N-CHANNEL ENHANCEMENT MODE POWER MOSFET
IRF840LCL ,500V Single N-Channel HEXFET Power MOSFET in a TO-262 packagePD- 93766IRF840LCS IRF840LCL®HEXFET Power MOSFETl Ultra Low Gate ChargeDl Reduced Gate Drive Requir ..
IRF840LCPBF ,500V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications.
Absolute Maximum Ratings
_ Parameter _ Mex. Units
b © Tc = 25'C Continuous Drain ..
IRF840LCSTRL ,500V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRF840PBF ,500V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational
1:212 Rectifier
PD-9.376H
IRF840
HEXFETO Power MOSFET
q Dynamic dv/dt ..
ISL6206CB ,High Voltage Synchronous Rectified Buck MOSFET DriverFeaturesMOSFET Driver Drives Two N-Channel MOSFETsThe ISL6206 is a high voltage, high frequency, d ..
ISL6206CB-T ,High Voltage Synchronous Rectified Buck MOSFET DriverApplicationsoutput is being shut down. This feature eliminates the Core Voltage Supplies for Intel ..
ISL6206CB-T ,High Voltage Synchronous Rectified Buck MOSFET Driverfeatures a three-state PWM input that, working Internal Bootstrap Schottky Diodetogether with any ..
ISL6207 ,Dual MOSFET Driver, N-Channel, 30V, use with Multiphase Controllers, 2.0 AmpApplicationsvoltage when the output is being shut down. This feature • Core Voltage Supplies for In ..
ISL6207CB ,High Voltage Synchronous Rectified Buck MOSFET DriverISL6207®Data Sheet July 2003 FN9075.4High Voltage Synchronous Rectified Buck
ISL6207CB-T ,High Voltage Synchronous Rectified Buck MOSFET Driverfeatures. See JATech Brief TB379.4. For θ , the “case temp” location is the center of the exposed m ..
IRF840B
500V N-Channel MOSFET
IRF840B/IRFS840B November 2001 IRF840B/IRFS840B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 8.0A, 500V, R = 0.8Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 41 nC) planar, DMOS technology. • Low Crss ( typical 35 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge. D G TO-220 TO-220F G D S G D S IRF Series IRFS Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter IRF840B Units IRFS840B V Drain-Source Voltage 500 V DSS I - Continuous (T = 25°C) Drain Current 8.0 8.0 A D C - Continuous (T = 100°C) 5.1 5.1 A C I (Note 1) Drain Current - Pulsed 32 32 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 320 mJ AS I Avalanche Current (Note 1) 8.0 A AR E (Note 1) Repetitive Avalanche Energy 13.4 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 3.5 V/ns P Power Dissipation (T = 25°C) 134 44 W D C - Derate above 25°C 1.08 0.35 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter IRF840B IRFS840B Units R Thermal Resistance, Junction-to-Case Max. 0.93 2.86 °C/W θJC R Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient Max. 62.5 62.5 °C/W θJA ©2001 Rev. A, November 2001
