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IRF840APBF
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD- 91900B
International
Tait Rectifier SMPS MOSFET IRF840A
HEXFET® Power MOSFET
Applications
. Switch Mode PowerSupply ( SMPS) VDSS Rds(on) max ID
0 Uninterruptable Power Supply 500V 0.859 8.0A
q High speed power switching
Benefits
o Low Gate Charge Qg results in Simple
Drive Requirement
. Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
o Fully Characterized Capacitance and
Avalanche Voltage and Current
. TO-220AB
o Effective Coss Specified (See AN1001)
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 8.0
ID @ Tc = 100°C Continuous Drain Current, Vss @ 10V 5.1 A
IDM Pulsed Drain Current co 32
PD @Tc = 25°C Power Dissipation 125 W
Linear Derating Factor 1.0 W/°C
VGs Gate-to-Source Voltage * 30 V
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
TJ Operating Junction and -55 to + 150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torqe, 6-32 or M3 screw 10 Ibf-in (1.1N-m)
Typical SMPS Topologies:
q Two Transistor Forward
0 Haft Bridge
q Full Bridge
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04/02/03
IRF840A International
Static @ T J = 25°C (unless otherwise specified) IOR Rectifier
Parameter Min. Typ. Max. Units Conditions
V(BR)Dss Drain-to-Source Breakdown Voltage 500 - - V VGs = 0V, ID = 250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient - 0.58 - V/°C Reference to 25°C, ID = 1mA
Roam) Static Drain-to-Source On-Resistance - - 0.85 Q VGS = 10V, ID = 4.8A 6)
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDs = Kas, ID = 250pA
loss Drain-to-Source Leakage Current - - 25 pA VDS = 500V, I/cs = 0V
- - 250 Vos = 400V, VGS = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 n A VGs = 30V
Gate-to-Source Reverse Leakage - - -100 VGS = -30V
Dynamic @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
git Forward Transconductance 3.7 - - S l/ns = 50V, ID = 4.8A
% Total Gate Charge - - 38 ID = 8.0A
Qgs Gate-to-Source Charge - - 9.0 nC Vos = 400V
di Gate-to-Drain ("Miller") Charge - - 18 VGS = 10V, See Fig. 6 and 13 ©
tdwn) Turn-On Delay Time - 11 - N/oo = 250V
tr Rise Time - 23 - ns ID = 8.0A
td(off) Turn-Off Delay Time - 26 - Rs = 9.19
tf Fall Time - 19 - RD = 31Q,See Fig. 10 (D
Ciss Input Capacitance - 1018 - l/cs = 0V
Coss Output Capacitance - 155 - Vos = 25V
Crss Reverse Transfer Capacitance - 8.0 - pF f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 1490 - VGS = 0V, VDs = 1.0V, f = 1.0MHz
Coss Output Capacitance - 42 - VGS = 0V, Vros = 400V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 56 - Vss = 0V, VDs = 0V to 400V s
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 510 mJ
IAR Avalanche Current0) - 8.0 A
EAR Repetitive Avalanche EnergyCD - 13 mJ
Thermal Resistance
Parameter Typ. Max. Units
Rouc Junction-to-Case - 1.0
Recs Case-to-Sink, Flat, Greased Surface 0.50 - °C/W
Ras Junction-to-Ambient 62
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 8 0 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current - - 32 integral reverse G
(Body Diode) CD p-n junction diode. s
VSD Diode Forward Voltage - - 2.0 V To = 25°C, Is = 8.0A, VGS = 0V ©
trr Reverse Recovery Time - 422 633 ns To = 25°C, IF = 8.0A
Qrr Reverse RecoveryCharge - 2.16 3.24 PC di/dt = 100A/ps C4)
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
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