IRF840. ,8A, 500V, 0.850 Ohm, N-Channel Power MOSFETapplications at power dissipation levels to approximately 50 watts. The low
thermal resistance and ..
IRF840.. ,8A, 500V, 0.850 Ohm, N-Channel Power MOSFETInternational
1:212 Rectifier
PD-9.376H
IRF840
HEXFETO Power MOSFET
q Dynamic dv/dt ..
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IRF840.-IRF840..-IRF840PBF
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
1:212 Rectifier
PD-9.376H
IRF840
HEXFET® Power MOSFET
0 Dynamic dv/dt Rating
0 Repetitive Avalanche Rated
0 Fast Switching
o Ease of Paralleling
o Simple Drive Requirements
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
VDSS = 500V
RDS(OD) = 0.859
on-resistance and cost-effectiveness.
The TO~220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
lo @ To = 25°C Continuous Drain Current, VGS © 10 V 8.0
In @ To = 100°C Continuous Drain Current, Vas © 10 V 5.1 A
IDM Pulsed Drain Current (i) 32
Po © To = 25°C Power Dissipation 125 W
Linear Derating Factor 1.0 W/°C
VGs Gate-to-Source Voltage $20 V
EAs Single Pulse Avalanche Energy Q) 510 mJ
FAR Avalanche Current C) 8.0 A
EAR Repetitive Avalanche Energy (D 13 mo
dv/dt Peak Diode Recovery dv/dt © 3.5 V/ns
To Operating Junction and -55 to +150
TSTS Storage Temperature Range 'C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 lbf-in (1.1 N.m)
Thermal Resistance
Parameter Min. Typ. Max. Units
Redo Junction-to-Case - - 1 .0
Recs Case-to-Sink, Flat, Greased Surface - 0.50 - °C/W
RNA Junction-to-Ambient - - 62
IRF840
Electrical Characteristics (ii) Tg = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 500 - - V VGs=OV, lo: 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.78 - V/°C Reference to 25°C, In: 1mA
Ramon) Static Drain-to-Source On-Resistance - - 0.85 n Ves=1OV, lo=4.8A co
Vegan) Gate Threshold Voltage 2.0 - 4.0 V VDS=VGS, ID: 250pA
Os Forward Transconductance 4.9 - - S ' VDS=50V, lo=4.8A ©
loss Drain-to-Source Leakage Current - - 25 WA Vns---500V, Var-UN
- -... 250 Vos=400V, Var=0V, TJ=125°C
less Gate-to-Source Forward Leakage - - 100 n A Vss=20V
Gate-to-Source Reverse Leakage - - -100 Ves=-20V
th Total Gate Charge - - 63 ID=8.0A
ths Gate-to-Source Charge - - 9.3 nC Vos=400V
di Gate-to-Drain ("Miller") Charge - - 32 Ves=10V See Fig, 6 and 13 ©
tum) Tum-On Delay Time - 14 - Vov=250V
tr Rise Time - 23 - ns |D=8.OA
td(off) Turn-Off Delay Time - 49 - Re=9.1Q
1: Fall Time - 20 - RD=31Q See Figure 10 ©
Lo Internal Drain Inductance - 4.5 - tieri'on.lti'nd.') D
nH from package GE
Ls Internal Source Inductance - 7.5 - Ind center 6f £3
die contact s
Cass Input Capacitance - 1300 - Var=0V
Coss Output Capacitance - 310 - pF Vos=25V
Crss Reverse Transfer Capacitance - 120 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max, Units Test Conditions
Is Continuous Source Current - - 8 0 MOSFET symbol D
(Body Diode) . A showing the L,-..,':
ISM Pulsed Source Current - - 32 _ integral reverse G :1.
(Body Diode) CO p-n junction diode. s
V3.) Diode Forward Voltage - - 2.0 V TJ=25°C, |s=8.0A, VGs=0V G)
trr Reverse Recovery Time - 460 970 ns TJ=25°C, IF=B.0A
er Reverse Recovery Charge - 4.2 8.9 PIC) di/dt=100A/ws C4)
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
(D Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=50V, starting TJ=25°C, L=14mH
Re=25§2, iAs=8.0A (See Figure 12)
© ISDSBDA, di/dts100A/ps, VDDSWBnpss
TJS150°C
co Pulse width s 300 us; duty cycle 32%.
