IRF8313TRPBF ,30V Dual N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R max QgDSS DS(on) Load Switch DC/DC Conversion30V 15.5m@V = 10V 6.0nCGSBenefits ..
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IRF8313PBF-IRF8313TRPBF
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
PD - 97145
International
TOR Rectifier IRF8313PbF
HEXFET*) Power MOSFET
Applications
0 Load Switch VDSS RDS(on) max tag
o DC/DC Conversion 30V 15.5mn@Vas = 10V 6.0nC
Benefits
0 Low Gate Charge and Low RDS(on)
Fully Characterized Avalanche Voltage
and Current S2 l- 1| D2
q 20V VGS Max. Gate Rating 62':_@[:| D2
0 100% Tested for RG Sl Il- EDI
o Lead-Free (Qualified to 260°C Reflow) tiifl
o RoHS Compliant (Halogen Free) 91'1‘ Elm SO-8
Description
The lRF8313PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the
industry standard SO-8 package. The lRF8313PbF has been optimized for parameters that are
critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC
converters that power the latest generation of processors for notebook and Netcom applications.
Absolute Maximum Ratings
Parameter Max. Units
Vrrs Drain-to-Source Voltage 30 V
Vss Gate-to-Source Voltage t20
ID © T, = 25°C Continuous Drain Current, Vss @ 10V 9.7
ID @ T, = 70°C Continuous Drain Current, Ves @ 10V 8.1 A
|DM Pulsed Drain Current C) 81
PD @TA = 25°C Power Dissipation 2.0 W
PD @TA = 70°C Power Dissipation 1.3
Linear Derating Factor 0.016 W/°C
Tu Operating Junction and -55 to + 175 I
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
ROJL Junction-to-Drain Lead s _ 42 °C/W
ROJA Junction-to-Ambient (DCS) - 62.5
Notes OD through © are on page 9
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
1
11/5/08
|RF8313PbF International
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V l/ss = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 0.021 - V/°C Reference to 25°C, ID = 1mA
RDswn) Static Drain-to-Source On-Resistance - 12.5 15.5 mn Vss = 10V, ID = 9.7A ©
- 18.6 21.6 Vss = 4.5V, ID = 8.0A ©
VGSW Gate Threshold Voltage 1.35 1.80 2.35 V Vos = Vesa ID = 25pA
AVGSuh) Gate Threshold Voltage Coefficient - -6.0 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 PA Vrys = 24V, Vss = 0V
- - 150 l/rs = 24V, Vss = OV, TJ = 125°C
IGSS Gate-to-Source Forward Leakage - - 100 n A Ves = 20V
Gate-to-Source Reverse Leakage - - -100 Vas = -20V
gts Forward Transconductance 23 - - S Vrys = 15V, ID = 8.0A
q, Total Gate Charge - 6.0 9.0
0951 Pre-Vth Gate-to-Source Charge - 1.5 - Vos = 15V
Qqs2 Post-Vth Gate-to-Source Charge - 0.9 - n C l/as = 4.5V
di Gate-to-Drain Charge - 2.2 - ID = 8.0A
090d, Gate Charge Overdrive -- 1.4 __- See Figs. 17a & 17b
st Switch Charge (Q952 + di) - 2.9 -
Qoss Output Charge - 3.8 - nC 1/ros = 16V, Vas = 0V
R, Gate Resistance - 2.2 3.6 Q
tam) Turn-On Delay Time -- 8.3 __- VDD = 15V, Vss = 4.5V
t, Rise Time - 9.9 - ns ID = 8.0A
tdmm Turn-Off Delay Time - 8.5 - Re = 1.89
t, Fall Time - 4.2 - See Fig. 15a & 15b
Ciss Input Capacitance -- 760 __- Vss = 0V
Coss Output Capacitance - 172 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 87 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy Co - 46 mJ
IAR Avalanche Current CD - 8.0 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 3.1 A MOSFET symbol D
(Body Diode) showing the
ISM Pulsed Source Current - - 82 A integral reverse 6
(Body Diode) T p-n junction diode. S
VSD Diode Forward Voltage - - 1.0 V To = 25°C, IS = 8.0A, Vss = 0V ©
tr, Reverse Recovery Time - 20 30 ns TJ = 25°C, IF = 8.0A, VDD = 15V
Qrr Reverse Recovery Charge - 10 15 nC di/dt = 100A/ps Cl)
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
