IRF822FI ,N-channel enhancement mode power MOS transistor, 500V, 1.9AABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
IRF
820 822 820FI 822Fl
Vos Drain-source V ..
IRF8252TRPBF ,25V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed for high efficiency DC-DC convertersapplications.Absolute Maximum RatingsParameter Max. UnitsVDS Drain-to-Source Voltage 25VV Gate-to-S ..
IRF830 ,POWER MOSFETIRF830®N - CHANNEL 500V - 1.35Ω - 4.5A - TO-220PowerMESH™ MOSFETTYPE V R IDSS DS(on) DIRF830 500 ..
IRF830AL ,500V Single N-Channel HEXFET Power MOSFET in a TO-262 package
IRF830AL ,500V Single N-Channel HEXFET Power MOSFET in a TO-262 package
IRF830APBF ,500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
ISL6115ACBZ , 12V Power Distribution Controllers
ISL6115CB ,Power Distribution ControllersFeatures• HOT SWAP Single Power Distribution Control (ISL6115 This family of fully featured hot swa ..
ISL6115CBZA , Power Distribution Controllers
ISL6115CBZA , Power Distribution Controllers
ISL6116CB ,Power Distribution ControllersBlock Diagram VDD+-POR R+QN8V RPWRONISET-QSUV-++VREF-ENABLE12V ISENPGOODISL611X20µAUV DISABLECLIM O ..
ISL6117CB ,Power Distribution Controllers1 82 73 64 5ISL6115, ISL6116, ISL6117, ISL6120®Data Sheet December 2002 FN9100 Power Distribution C ..
IRF822FI
N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS
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(ialCRt))El:EC)1l'R0yNt)S
ti1_7_1ii!Ri37 00115700 Mil DSGTH
lRF820/Fl
IRF822/FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
TYPE Voss RDS(an) ID
IRF820 500 V < 3 Q 3 A
IRFBZOFI 500 V < 3 Q 2.2 A
IRF822 500 V < 4 n 2.8 A
IRF822FI 500 V < 4 Q 1.9 A
TYPICAL RDS(on) = 2.5 fl
100% AVALANCHE TESTED
- AVALANCHE RUGG ED TECHNOLOGY
HEPETITIVE AVALANCHE DATA AT 100°C
APPLICATIONS
. HIGH CURRENT, HIGH SPEED SWITCHING
- SWITCH MODE POWER SUPPLIES (SMPS)
a CHOPPER REGULATORS, CONVERTERS.
MOTOR CONTROL, LIGHTING FOR
INDUSTRIAL AND CONSUMER
ENVIRONMENT
TO-220
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
II (2)
',:' c (t)
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
820 , 822 820Fl 822Fl 1 1
t - . t - -1 -
. Vos Drain-source Voltage (Vas = O) 500 2 500 500 500 t V 1
I Voen Drain- gate Voltage (Res = 20 kn) 500 500 500 500 V
_ l/ss Gate-source Voltage i 20 V
In Drain Current (cont.) at Ts = 25 t'tt 3 2.8 - _2:.2, 2L1 "A
In Drain Current (cont) at Ts = 100 °C 1.9 g 1.7 1.4 1.2 f A
_ |DM(') Drain Current (pulsed) 12 12 12 12 A
[ Pust Total Dissipation at T0 = 25 ''C 75 35 W
Derating Factor 0.6 0.28 W/°C
Tstn Storage Temperature _ -65 to 150 "C
Ti Max. Operating Junction Temperature 150 °C
(o) Pulse width limited by safe operating area
July 1993 1/6
IRF 820/FI - 822/Fl
———— D 7:13:13} UU‘ISNJ]; Tien DSGTH
THERMAL DATA
TO-22O ISOWATT220
Rm-case Thermal Resistance Junction-case Max 1.66 3.57 °C/W
F Rmam Thermal Resistance Junction-ambient Max 62.5 °C/W
Rtruvs Thermal Resistance Case-sink Typ 0.5 °C/W
TI Maximum Lead Temperature For Soldering Purpose 300 °C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
lAR Avalanche Current, Repetitive or Not-Repetitive 3 A
(pulse width limited by T, max, 5 < 1%)
Egg Single Pulse Avalanche Energy 225 m0
(starting T“ = 25 oc, In - IAR, VDD = 25 V)
EAR Repetitive Avalanche Energy 6 mJ
(pulse width limited by Tj max, 6 < 1%)
Un Avalanche Currght, Repetitive or Not-Repetitive 1.9 A
(T, = 100 oc, pulse width limited by T; max, 6 < 1%)
ELECTRICAL CHARACTERISTICS (T case = 25 't unless otherwise specified)
I Symbol Parameter Test Condltlons Min. Typ. Max. Unit
V(BR)DSS Drain-source lo = 250 WA Mas '* 0 500 V
Breakdown Voltage
luss Zero Gate Voltage Vos = Max Rating 250 pA
Drain Current (Vas = 0) Vos = Max Rating x 0.8 Tc - 125°C 1000 pA
Itass Gate-body Leakage Vas = t 20 V i 100 nA
Current (Vos = 0)
ON (*)
Symbol Parameter Test Conditions Min. Typ. Max. Unlt
Vesuh) Gate Threshold Voltage VDs = Vas 19 = 250 WA 2 3 4 V 1
Roswn) Static Drain-source On Vas = 10V 19 = 1.5 A
Resistance for IRF820/820Fl 2.5 3 Q
for lRF822/822Fl 2.5 4 n
loam) On State Drain Current Vos > IDton) x RDS(on)max Vas = 10 V
for IRF820/820Fl 3 A
for IRF822/822Fl 2.8 A
DYNAMIC
Symbol Parameter Test Co_nditions Min. Typ. Max. Unit
9ts (*) Forward Vns > low") x RDS(cn)max ID = 1.5 A 0.8 1.93 S
Transconductance
Ciss Input Capacitance Vos = 25 V f = 1 MHz Vas = 0 350 460 pF
Cass Output Capacitance 60 80 pF
Crss Reverse Transfer 25 35 pF
Capacitance
2/6 A,""," scs-morason
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