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Partno	Mfg	Dc	Qty	Available	Descript
IRF820AL	IR	N/a	848	avai	500V Single N-Channel HEXFET Power MOSFET in a TO-262 package
IRF820AS	IR	N/a	4800	avai	500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

IRF820AS ,500V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagePD- 93774AIRF820ASSMPS MOSFET IRF820AL®HEXFET Power MOSFET
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IRF820PBF ,500V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipation levels to approximately 50 watts. The low thermal resistance and ..
IRF822 ,N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.0A.nu . m.— FAIRCHILD SEMICONDUCTOR ELI os:lllvuawiu; DDE?'=ILLI i? r M IRF420-423fiRF820-82 ..
IRF822. ,N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.0A.applications, fi) such as switching power supplies, converters, AC and DC motor controls, relay a ..
IRF822FI ,N-channel enhancement mode power MOS transistor, 500V, 1.9AABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit IRF 820 822 820FI 822Fl Vos Drain-source V ..
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ISL6115CBZA , Power Distribution Controllers
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IRF820AL-IRF820AS
500V Single N-Channel HEXFET Power MOSFET in a TO-262 package
1
5/8/00
IRF820AS
IRF820ALSMPS MOSFET
HEXFET® Power MOSFETSwitch Mode Power Supply (SMPS)Uninterruptable Power SupplyHigh speed power switching
Benefits
ApplicationsLow Gate Charge Qg Results in Simple
Drive RequirementImproved Gate, Avalanche and Dynamic
dv/dt RuggednessFully Characterized Capacitance and
Avalanche Voltage and CurrentEffective COSS specified (See AN 1001)
Typical SMPS Topologies:
l Two Transistor Forward
l Half Bridge and Full Bridge
Absolute Maximum Ratings
PD- 93774A
Notes � through � are on page 8
IRF820AS/L
Dynamic @ T = 25°C (unless otherwise specified)
Avalanche Characteristics
Diode Characteristics
Static @ TJ = 25°C (unless otherwise specified)
Thermal Resistance
IRF820AS/L
3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
IRF820AS/L
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward VoltageDS, Drain-to-Source Voltage (V)
C, Capacitance(pF)
IRF820AS/L
5
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on)trtd(off)tf
Fig 10b. Switching Time Waveforms
-VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
IRF820AS/L
D.U.T.VDSIG
3mA
VGS12V
CurrentRegulator
SameTypeasD.U.T.
CurrentSamplingResistors
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain CurrentFig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
IASVDSVDD
15V
Fig 12d. Typical Drain-to-Source Voltage
Vs. Avalanche CurrentAV , Avalanche Current ( A)
DSav
, Avalanche Voltage ( V )

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