IRF820A. ,500V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD- 93773ASMPS MOSFETIRF820A®HEXFET Power MOSFET
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IRF820A-IRF820A.
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD- 93773A
International
. . SMPS MOSFET IRF820A
Tart, Rectifier
HEXFET© Power MOSFET
Applications
. Switch Mode Power Supply (SMPS) Voss RDs(on) max ID
o Uninterruptable Power Supply 500V 3.on 2.5A
0 High speed power switching
Benefits
o Low Gate Charge Qg results in Simple ,
Drive Requirement
q Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
q Fully Characterized Capacitance and
Avalanche Voltage and Current
q Effective Coss specified (See AN 1001) TO-220AB G D s
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 2.5
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 1.6 A
G, Pulsed Drain Current co 10
Pro @Tc = 25°C Power Dissipation 50 W
Linear Derating Factor 0.4 W/''C
VGs Gate-to-Source Voltage 1 30 V
dv/dt Peak Diode Recovery dv/dt © 3.4 V/ns
TJ Operating Junction and -55 to + 150
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torqe, 6-32 or M3 screw 10lbf-in (1.1N-m)
Typical SMPS Topologies:
0 Two transistor Forward
. Half Bridge and Full Bridge
Notes (D through (S) are on page 8
1
5/8/00
IRF820A
International
TOR Rectifier
Static @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BRpss Drain-to-Source Breakdown Voltage 500 - - V Veg = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.60 - V/°C Reference to 25°C, ID = 1mA
Roam Static Drain-to-Source On-Resistance - - 3.0 Q VGS = 10V, ID = 1.5A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.5 V v.35 = VGs, ID = 250pA
loss Drain-to-Source Leakage Current - - 25 pA Vros = 500V, VGS = 0V
- - 250 Ws = 400V, VGS = 0V, To = 125°C
I Gate-to-Source Forward Leakage - - 100 n A N/ss = 30V
GSS Gate-to-Source Reverse Leakage - - -100 VGS = -30V
Dynamic © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 1.4 - - S Vos = 50V, ID = 1.5A
% Total Gate Charge - - 17 ID = 2.5A
Qgs Gate-to-Source Charge - - 4.3 nC Vos = 400V
di Gate-to-Drain ("Miller") Charge - - 8.5 Was = 10V, See Fig. 6 and 13 ©
tum) Turn-On Delay Time - 8.1 - VDD = 250V
tr Rise Time - 12 - ns ID = 2.5A
td(off) Turn-Off Delay Time - 16 - Rs = 21n
tr Fall Time - 13 - RD = 97Q,See Fig. 10 ©
Ciss Input Capacitance - 340 - V63 = 0V
C055 Output Capacitance - 53 - Vros = 25V
Crss Reverse Transfer Capacitance - 2.7 - pF f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 490 - Veg = 0V, V03 = 1.0V, f = 1.0MHz
Coss Output Capacitance - 15 - VGs = 0V, VDs = 400V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 28 - VGS = 0V, Vos = 0V to 400V S
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 140 mJ
IAR Avalanche Current© - 2.5 A
EAR Repetitive Avalanche Energy0) - 5.0 mJ
Thermal Resistance
Parameter Typ. Max. Units
Rac Junction-to-Case - 2.5
Recs Case-to-Sink, Flat, Greased Surface 0.50 - °CNV
ReJA Junction-to-Ambient - 62
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 2.5 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) OD - - IO p-n junction diode. s
VSD Diode Forward Voltage - - 1.6 V To = 25°C, Is = 2.5A, VGS = 0V ©
trr Reverse Recovery Time - 330 500 ns To = 25°C, IF = 2.5A
Qrr Reverse RecoveryCharge - 760 1140 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by L3+LD)
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