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Symbol Parameter Value Unit
IRF
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IRF820.-IRF820PBF
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD-9.324O
IRF820
ilrttai1atiipt,tall
1:212 Rectifier
HEXFET® Power MOSFET
0 Dynamic dv/dt Rating
0 Repetitive Avalanche Rated
0 Fast Switching I
o Ease of Paralleling
It Simple Drive Requirements
Voss = 500V
RDS(on) = 3.on
ID '.UT. 2.5A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commerciaI-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
Io @ To = 25°C Continuous Drain Current, Vas @ 10 V 2.5
lo @ Tc = 100°C Continuous Drain Current, Ves o 10 V 1.6 A
IDM Pulsed Drain Current C) 8.0
Po @ Tc LIT. 25°C Power Dissipation 50 W
Linear Derating Factor 0.40 W/°C
Vss Gate-to-Source Voltage $20 V
EAS Single Pulse Avalanche Energy © 210 ml
Un Avalanche Current C) 2.5 A
EAR Repetitive Avalanche Energy C) 5.0 mJ
dv/dt Peak Diode Recovery dv/dt © 3.5 V/ns
To Operating Junction and -55 to +150
Tsm Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
.J Mounting Torque, 6-32 or M3 screw 10 lbf-in (1.1 N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
ReJC Junction-to-Case - - 2.5
Recs __ Case-to-Sink, Flat, Greased Surface - O.50 - °C/W
HGJA Junction-to-Ambient - - 62
IR F820 EOR
Electrical Characteristics tii) Tg = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 500 - - V VGs=OV, ID: 250pA
AV[BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.59 - VPC Reference to 25°C, In: 1mA
RDS(on) Static Drain-to-Source On-Resistance .- - 3.0 f2 Ves=1OV, ID=1.5A ©
VGS(Ih) Gate Threshold Voltage 2.0 - 4.0 V Vmr--Vas, ID: 2501,1A
gis Forward Transconductance 1.5 - - S Vos=50V, 10:1.5A G)
. - - 25 Vos=500V, Vss=0V
loss Drain-to-Source Leakage Current - - 250 uA Vos=400V, Vas--0V, TJ=125°C
less Gate-to-Source Forward Leakage - -- 100 n A Vss---20V
Gate-to-Source Reverse Leakage - - -100 VGs=-20V
Qg Total Gate Charge - - 24 lo=2.1A
Qgs Gate-to-Source Charge - - 3.3 nC Vos=400V _
di Gate-to-Drain ("Miller") Charge - - 13 Ves=10V See Fig. 6 and 13 ©
tum) Turn-On Delay Time - 8.0 - VDD=250V
tr Rise Time - 8.6 - ns Io=2.1 A
town) Turn-Off Delay Time - 33 - RG=18§2
tr Fall Time _ - 16 - RD=1OOQ See Figure 10 C4)
Lo Internal Drain Inductance - 4.5 - ttir'tt"i'J2fi1nd.')
nH from package cg:
Ls Internal Source Inductance - 7.5 - and center df HE)
die contact
Ciss Input Capacitance - 360 - I/ss-HN
Cass Output Capacitance - 92 - pF 1/ros=25V
Crss Reverse Transfer Capacitance - 37 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
7 Parameter Min. Typ, Max. Units Test Conditions
ls Continuous Source Current - - 2 5 MOSFET symbol D
(Body Diode) ' A showing the F7:
ISM Pulsed Source Current -- - 8 0 integral reverse G (tl-]
(Body Diode) (IC) . p-n junction diode. s
Vso Diode Forward Voltage - - 1.6 V TJ=25°C, ls=2.5A, VGs=OV co
trr Reverse Recovery Time - 260 520 ns TJ=25°C, IF=2.1A
Cl,, Reverse Recovery Charge - 0.70 1.4 wc di/dt=100A/us ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
Ci) Repetitive rating; pulse width limited by © Isos2.5A, di/dtSSOA/ps, VDDSV(BH)Dss,
max. junction temperature (See Figure 11) TJS150°C
© Voo=50v, starting TJ=25°C, L=60mH © Pulse width s; 300 us; duty cycle S2%.
Rts=250, iAs=2.5A (See Figure 12)
