IRF8113UTRPBF ,30V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed and qualified for the consumer marketApplicationsV R maxQg Typ.DSS DS(on) Synchronous MOSFET for Notebook5.6m
IRF8113UTRPBF
30V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed and qualified for the consumer market
PD - 96077A
International
TOR Rectifier IRF8113UPbF
HEXFET© Power MOSFET
Applications
q Synchronous MOSFET for Notebook Voss Rrosion) max tag Typ.
Processor Power 30V 5.6mn@Vas = 10V 24nC
o Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
s EED‘ ' B D
Benefits s £1112 H 7:113 D
q Very Low RDS(on) at 4.5V l/ss S EED3 W 6m D
o Low Gate Charge G m4 5m D
q Fully Characterized Avalanche
Voltage and Current Top View SO-8
100% Tested for Rs
Lead-Free
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage 1 20
ID @ TA = 25°C Continuous Drain Current, Vss @ 10V 17.2
ID @ TA = 70°C Continuous Drain Current, Vss @ 10V 13.8 A
IDM Pulsed Drain Current (D 135
PD @TA = 25°C Power Dissipation (CE) 2.5 W
PD @TA = 70°C Power Dissipation (D 1.6
Linear Derating Factor 0.02 WPC
Tu Operating Junction and -55 to + 150 °C
Tsms Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
ROJL Junction-to-Drain Lead © _ 20 "C/W
Rm Junction-to-Ambient C9(9 - 50
Notes co through co are on page 10
1
09/18/06
|RF8113UPbF
International
Static © To = 25°C (unless otherwise specified) TOR Rectifier
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V Veg = 0V, lo = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 0.024 - VPC Reference to 25°C, ID = 1mA
RDSW, Static Drain-to-Source On-Resistance -- 4.7 5.6 mn Vss = 10V, ID = 17.2A ©
- 5.8 6.8 l/ss = 4.5V, ID =13.8A ©
VGSW Gate Threshold Voltage 1.5 -- 2.2 V VDS = Vss, ID = 250pA
Al/asm Gate Threshold Voltage Coefficient - - 5.4 - mV/°C
loss Drain-to-Source Leakage Current -- -- 1.0 PA l/rss = 24V, Vss = 0V
- - 150 Vos = 24V, Vas = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage -- -- 100 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -100 l/ss = -20V
gfs Forward Transconductance 73 - - S l/rss = 15V, ID = 13.3A
Qg Total Gate Charge - 24 36
0951 Pre-Wh Gate-to-Source Charge - 6.2 - l/rss = 15V
0952 Post-Vth Gate-to-Source Charge - 2.0 - nC Ves = 4.5V
di Gate-to-Drain Charge - 8.5 - ID = 13.3A
ngd, Gate Charge Overdrive - 7.3 - See Fig. 16
st Switch Charge (0952 + di) - 10.5 -
Qoss Output Charge - 10 - nC I/os = 10V, I/as = 0V
RG Gate Resistance - 0.8 1.5 Q
tdwn) Turn-On Delay Time - 13 - VDD = 15V, I/ss = 4.5V ©
t, Rise Time - 8.9 - ID = 13.3A
td(oti) Turn-Off Delay Time - 17 - ns Clamped Inductive Load
t, Fall Time - 3.5 -
Ciss Input Capacitance - 2910 - Ves = 0V
Coss Output Capacitance - 600 - pF Vrss = 15V
Crss Reverse Transfer Capacitance - 250 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy © -- 48 mJ
|AR Avalanche Current CD - 13.3 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 3.1 MOSFET symbol D
(Body Diode) A showing the if
ISM Pulsed Source Current - - 135 integral reverse G E
(Body Diode) CD p-n junction diode. cl
VsD Diode Forward Voltage - - 1.0 V TJ = 25°C, ls = 13.3A, VGS = 0V a
tn Reverse Recovery Time - 34 51 ns Tu = 25°C, IF = 13.3A, VDD = 10V
Qrr Reverse Recovery Charge - 21 32 nC di/dt = 100A/ps a
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