IRF8113PBF ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R maxQg Typ.DSS DS(on) Synchronous MOSFET for Notebook5.6m
IRF8113PBF
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
International
a:io:RIectifier
PD - 95138B
|RF8113PbF
HEXFET© Power MOSFET
Applications
q Synchronous MOSFET for Notebook VDSS RDSion) max Qg Typ.
Processor Power 30V 5.6mn@Vss = 10V 24nC
o Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
s EDT 8 D
Benefits s m2 B CD] D
q Very Low RDS(on) at 4.5V VGS S EED3 m E SUE D
q Low Gate Charge G m4 5m D
o Fully Characterized Avalanche Voltage
and Current Top View SO-8
q 100% Tested for Rs
o Lead-Free
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage i 20
ID @ TA = 25''C Continuous Drain Current, Vss @ 10V 17.2
ID @ TA = 70°C Continuous Drain Current, VGs @ 10V 13.8 A
IDM Pulsed Drain Current (D 135
PD @TA = 25°C Power Dissipation (CE) 2.5 W
Pro @TA = 70°C Power Dissipation © 1.6
Linear Derating Factor 0.02 W/°C
Tu Operating Junction and -55 to + 150 ''C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
' Junction-to-Drain Lead © - 20 ''C/W
ROJA Junction-to-Ambient C9(9 - 50
Notes co through co are on page 10
6/29/06
|RF8113PbF
International
Static @ T J = 25°C (unless otherwise specified) TOR Rectifier
Parameter Min. Typ. Max. Units Conditions
BVDss Drain-to-Source Breakdown Voltage 30 - - V VGS = 0V, lo = 250pA
ABVDSSIATJ Breakdown Voltage Temp. Coefhcient - 0.024 - V/°C Reference to 25°C, ID = 1mA
Rosa”, Static Drain-to-Source On-Resistance - 4.7 5.6 mn VGS = 10V, ID = 17.2A ©
- 5.8 6.8 I/ss = 4.5V, ID = 13.8A (3
Vegan) Gate Threshold Voltage 1.5 - 2.2 V VDS = VGS, ID = 250pA
AVGS(th) Gate Threshold Voltage Coefhcient - - 5.4 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA Ws = 24V, N/ss = 0V
- - 150 Ws = 24V, VGS = 0V, T, = 125°C
less Gate-to-Source FonNard Leakage - - 100 nA VGS = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
gfs Forward Transconductance 73 - - S Vros = 15V, ID = 13.3A
q, Total Gate Charge - 24 36
ON Pre-Vth Gate-to-Source Charge - 6.2 - Vros = 15V
0952 Post-l/th Gate-to-Source Charge - 2.0 - nC VGS = 4.5V
di Gate-to-Drain Charge - 8.5 - ID = 13.3A
ngd, Gate Charge Overdrive - 7.3 - See Fig. 16
st Switch Charge (0952 + di) - 10.5 -
Qoss Output Charge - 10 - nC Ws = 10V, VGS = 0V
RG Gate Resistance - 0.8 1.5 Q
tam") Turn-On Delay Time - 13 - VDD = 15V, VGS = 4.5V ©
t, Rise Time - 8.9 - ID = 13.3A
tdwm Turn-Off Delay Time - 17 - ns Clamped Inductive Load
tf Fall Time - 3.5 -
Ciss Input Capacitance - 2910 - VGS = 0V
Coss Output Capacitance - 600 - pF Vros = 15V
Crss Reverse Transfer Capacitance - 250 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy © - 48 mJ
IAR Avalanche Current CD - 13.3 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 3.1 MOSFET symbol D
(Body Diode) A showing the if
ISM Pulsed Source Current - - 135 integral reverse G E
(Body Diode) CD p-n junction diode. cl
VSD Diode Forward Voltage - - 1.0 V To = 25°C, Is = 13.3A, VGS = 0V a
t, Reverse Recovery Time - 34 51 ns Tu = 25°C, IF = 13.3A, VDD = 10V
Qrr Reverse Recovery Charge - 21 32 nC di/dt = 100A/ps a
2
