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IRF8113GTRPBF from IR,International Rectifier

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IRF8113GTRPBF

Manufacturer: IR

Halogen Free and Lead Free 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

Partnumber Manufacturer Quantity Availability
IRF8113GTRPBF IR 5000 In Stock

Description and Introduction

Halogen Free and Lead Free 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package The IRF8113GTRPBF is a power MOSFET manufactured by Infineon Technologies. Here are the key specifications, descriptions, and features from Ic-phoenix technical data files:

### **Specifications:**  
- **Manufacturer:** Infineon Technologies  
- **Part Number:** IRF8113GTRPBF  
- **Type:** N-Channel Power MOSFET  
- **Technology:** HEXFET®  
- **Drain-Source Voltage (VDSS):** 30V  
- **Continuous Drain Current (ID):** 98A (at 25°C)  
- **Pulsed Drain Current (IDM):** 390A  
- **RDS(on) (Max):** 1.8mΩ (at VGS = 10V, ID = 50A)  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 200W (at 25°C)  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  
- **Package:** TO-263 (D2PAK)  

### **Descriptions & Features:**  
- Designed for high-efficiency power switching applications.  
- Low on-resistance (RDS(on)) for reduced conduction losses.  
- Fast switching performance.  
- Optimized for synchronous buck converters and motor control applications.  
- Lead-free and RoHS compliant.  

This information is based solely on the manufacturer's datasheet and technical documentation.

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