IRF8113 ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R maxQg Typ.DSS DS(on) Synchronous MOSFET for Notebook5.6m@V = 10V30V 24nC Proc ..
IRF8113 ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 package IRF8113HEXFET Power MOSFET
IRF8113GTRPBF ,Halogen Free and Lead Free 30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R maxQg Typ.DSS DS(on) Synchronous MOSFET for Notebook5.6m
IRF8113-IRF8113TR
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD - 94637B
International
TOR. Rectifier IRF8113
HEXFET® Power MOSFET
Applications
q Synchronous MOSFET for Notebook Voss Rrosion) max ttg Typ.
Processor Power 30V 5.6mQ@VGS = 10V 24nC
o Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
s nrp I “313 D
Benefits s :11 H 7:1: D
0 Very Low RDS(on) at 4.5V l/ss s 1113 Ir' 6333 D
0 Low Gate Charge 4 5
. G _Lld 4.14 D
q Fully Characterized Avalanche Voltage
and Current Top View SO-8
o 100% Tested for He
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 30 V
Vss Gate-to-Source Voltage 1 20
ID @ TA = 25°C Continuous Drain Current, Vss @ 10V 17.2
ID @ TA = 70°C Continuous Drain Current, l/ss @ 10V 13.8 A
IDM Pulsed Drain Current co 135
Pro OTA = 25°C Power Dissipation © 2.5 W
PD @TA = 70°C Power Dissipation © 1.6
Linear Derating Factor 0.02 W/°C
Tu Operating Junction and -55 to + 150 °C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
F10JL Junction-to-Drain Lead s - 20 °CNV
ROJA Junction-to-Ambient C4DOD - 50
Notes co through co are on page 10
1
6/30/05
|RF8113
International
Static © T J = 25°C (unless otherwise specified) TOR Rectifier
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V Ves = 0V, ID = 250PA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 0.024 - V/°C Reference to 25°C, b = 1mA
RDSW, Static Drain-to-Source On-Resistance - 4.7 5.6 mf2 Vss = 10V, ID = 17.2A ©
- 5.8 6.8 Vas = 4.5V, ID =13.8A ©
Vegan) Gate Threshold Voltage 1.5 - 2.2 V l/rs = Vss, ID = 250pA
AVGSM Gate Threshold Voltage Coefficient - - 5.4 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA Vrys = 24V, Vss = 0V
- - 150 I/os = 24V, Vas = OV, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -100 Vas = -20V
gfs Forward Transconductance 73 - - S Vrys = 15V, ID = 13.3A
q, Total Gate Charge - 24 36
As, Pre-Vth Gate-to-Source Charge - 6.2 - Vrys = 15V
0952 Post-Vth Gate-to-Source Charge - 2.0 - nC Ves = 4.5V
di Gate-to-Drain Charge - 8.5 - ID = 13.3A
ngd, Gate Charge Overdrive - 7.3 - See Fig. 16
st Switch Charge (0952 + di) - 10.5 -
Qoss Output Charge - 10 - nC Vos = 10V, Vas = 0V
Re Gate Resistance - 0.8 1.5 Q
td(on) Turn-On Delay Time - 13 - VDD = 15V, Vas = 4.5V ©
t, Rise Time - 8.9 - ID =13.3A
tdwm Turn-Off Delay Time - 17 - ns Clamped Inductive Load
t, Fall Time - 3.5 -
Ciss Input Capacitance - 2910 - Ves = 0V
Coss Output Capacitance - 600 - pF Vrys = 15V
Crss Reverse Transfer Capacitance - 250 - f = 1.0MH2
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy © - 48 mJ
|AR Avalanche Current CD - 13.3 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 3.1 MOSFET symbol D
(Body Diode) A showing the Lt
ISM Pulsed Source Current - - 135 integral reverse Cl (rd,
(Body Diode) C) p-n junction diode. cl
VSD Diode Forward Voltage - - 1.0 V TJ = 25°C, ls = 13.3A, VGS = 0V ©
tr, Reverse Recovery Time - 34 51 ns TJ = 25°C, IF = 13.3A, VDD = 10V
Qrr Reverse Recovery Charge - 21 32 nC di/dt = 100A/ps s
2
