IRF8010S ,100V Single N-Channel HEXFET Power MOSFET in a D2Pak packageApplicationsHEXFET Power MOSFET High frequency DC-DC converters UPS and Motor ControlV R max ID ..
IRF8010STRLPBF ,100V Single N-Channel HEXFET Power MOSFET in a D2Pak packagePD - 95433IRF8010SPbFSMPS MOSFETIRF8010LPbF
IRF8010STRLPBF ,100V Single N-Channel HEXFET Power MOSFET in a D2Pak packageApplicationsHEXFET Power MOSFET High frequency DC-DC converters UPS and Motor ControlV R max I ..
IRF8113 ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R maxQg Typ.DSS DS(on) Synchronous MOSFET for Notebook5.6m@V = 10V30V 24nC Proc ..
IRF8113 ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 package IRF8113HEXFET Power MOSFET
IRF8113GTRPBF ,Halogen Free and Lead Free 30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R maxQg Typ.DSS DS(on) Synchronous MOSFET for Notebook5.6m
IRF8010S
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package
International
a:aRlectifier
Applications
o High frequency DC-DC converters
0 UPS and Motor Control
SMPS MOSFET
PD - 94573
IRF8010S
IRF8010L
HEXFET® Power MOSFET
VDss RDS(on) max ID
Benefits . 100V 15mg 80A©
0 Low Gate-to-Drain Charge to Reduce
Switching Losses
0 Fully Characterized Capacitance Including
Effective Cogs to Simplify Design, (See ," "."
App. Note AN1001) 1'/it ,qf‘j T it.'". .. '. u.
o Fully Characterized Avalanche Voltage 'tF V1 'e. 'n.,
and Current l, '
0 Typical RDS(on) = 12mQ D2Pak TO-262
IRF8010S IRF8010L
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, N/ss @ 10V 80©
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 57 A
IDM Pulsed Drain Current C) 320
PD @TC = 25°C Power Dissipation 260 W
Linear Derating Factor 1.8 W/“C
VGS Gate-to-Source Voltage i 20 V
dv/dt Peak Diode Recovery dv/dt © 16 V/ns
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 0.57
Roc Junction-to-Case (end of life) s - 0.80 ''C/W
Recs Case-to-Sink, Flat, Greased Surface 0.50 -
RNA Junction-to-Ambient (PCB Mount, steady state)@ - 40
Notes (D through are on page 8
1
01/28/03
lRF8010S/lRF8010L
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V Ves = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.11 - V/°C Reference to 25°C, lo = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 12 15 mn VGS = 10V, ID = 45A ©
Vesuh) Gate Threshold Voltage 2.0 - 4.0 V Vos = VGS, ID = 250pA
loss Drain-to-Source Leakage Current - - 20 pA Ihos = 100V, VGS = 0V
- - 250 Vos = 100V, VGS = 0V, TJ = 125°C
lGss Gate-to-Source Forward Leakage - - 200 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -200 VGS = -20V
Dynamic © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 82 - - V l/ns = 25V, ID = 45A
09 Total Gate Charge - 81 120 ID = 80A
Qgs Gate-to-Source Charge - 22 - nC Vos = 80V
di Gate-to-Drain ("Miller") Charge - 26 - VGS = 10V (9
tam") Turn-On Delay Time - 15 - VDD = 50V
t, Rise Time - 130 - ID = 80A
te(ott) Turn-Off Delay Time - 61 - ns Rs = 399
t, Fall Time - 120 - VGS = 10v (9
Ciss Input Capacitance - 3830 - VGS = 0V
Cass Output Capacitance - 480 - Vos = 25V
Crss Reverse Transfer Capacitance - 59 - pF f = 1.0MHz
Cass Output Capacitance - 3830 - Vss = 0V, Ws = 1.0V, f = 1.0MHz
Cass Output Capacitance - 280 - VGS = 0V, VDS = 80V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 530 - VGS = 0V, I/os = 0V to 80V ©
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy©© - 310 mJ
IAR Avalanche Current C) _ 45 A
EAR Repetitive Avalanche Energy C) _ 26 m J
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 80 MOSFET symbol D
(Body Diode) A showing the
I SM Pulsed Source Current - - 320 integral reverse G
(Body Diode) ©© p-n junction diode. S
V3.3 Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 80A, VGS = 0V ©
trr Reverse Recovery Time - 99 150 ns T J = 150°C, IF = 80A, VDD = 50V
Qrr Reverse RecoveryCharge - 460 700 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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