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IRF8010PBF
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
Tart Rectifier
Applications
o High frequency DC-DC converters
0 UPS and Motor Control
0 Lead-Free
Benefits
o Low Gate-to-Drain Charge to Reduce
Switching Losses
0 Fully Characterized Capacitance Including
Effective Coss to Simplify Design, (See
PD - 95505
|RF801OPbF
SMPS MOSFET
HEXFET© Power MOSFET
RDS(on) max ID
15mQ 80A©
App. Note AN1001) 'i'"
o Fully Characterized Avalanche Voltage .
and Current
0 Typical RDS(on) = 12mf2 TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25''C Continuous Drain Current, VGS @ 10V 80©
ID @ To = 100°C Continuous Drain Current, VGS @ 10V 57 A
kos, Pulsed Drain Current 0 320
PD @Tc = 25°C Power Dissipation 260 W
Linear Derating Factor 1.8 W/°C
VGS Gate-to-Source Voltage , 20 V
dv/dt Peak Diode Recovery dv/dt © 16 V/ns
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw 1.1(10) N-m (lbFin)
Thermal Resistance
Parameter Typ. Max. Units
ROJC Junction-to-Case - 0.57
Rocs Case-to-Sink, Flat, Greased Surface 0.50 - oCNV
ROJA Junction-to-Ambient - 62
Notes OD through © are on page 8
1
07/06/04
IRF8010PbF
International
Static @ T J = 25°C (unless otherwise specified) TOR Rectifier
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V Vss = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.11 - V/°C Reference to 25°C, lo = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 12 15 mn VGS = 10V, ID = 45A Cr)
Vesan) Gate Threshold Voltage 2.0 - 4.0 V Vos = VGS, ID = 250PA
loss Drain-to-Source Leakage Current - - 20 pA Ihos = 100V, VGS = 0V
- - 250 l/os = 100V, VGS = 0V, TJ = 125°C
lGss Gate-to-Source Forward Leakage - - 200 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -200 VGS = -20V
Dynamic © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 82 - - V l/ns = 25V, ID = 45A
Qg Total Gate Charge - 81 120 ID = 80A
Qgs Gate-to-Source Charge - 22 - nC Vos = 80V
di Gate-to-Drain ("Miller") Charge - 26 - VGS = 10V ©
tam") Turn-On Delay Time - 15 - VDD = 50V
t, Rise Time - 130 - ID = 80A
te(ott) Turn-Off Delay Time - 61 - ns Rs = 399
t, Fall Time - 120 - VGS = 10V ©
Ciss Input Capacitance - 3830 - Vss = 0V
Coss Output Capacitance - 480 - Vos = 25V
Crss Reverse Transfer Capacitance - 59 - pF f = 1.0MHz
Cass Output Capacitance - 3830 - Vss = 0V, Ws = 1.0V, f = 1.0MHz
Cass Output Capacitance - 280 - VGS = 0V, VDS = 80V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 530 - VGS = 0V, I/os = 0V to 80V OD
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy©© - 310 mJ
IAR Avalanche Current (D _ 45 A
EAR Repetitive Avalanche Energy (D _ 26 m J
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
l S Continuous Source Current - - 80 MOSFET symbol D
(Body Diode) A showing the
I SM Pulsed Source Current - - 320 integral reverse G
(Body Diode) CDO) p-n junction diode. S
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, ls = 80A, VGS = 0V ©
trr Reverse Recovery Time - 99 150 ns T J = 150°C, IF = 80A, I/oo = 50V
Qrr Reverse RecoveryCharge - 460 700 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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