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IRF8010
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD - 94497
International
ISER Rectifier SMPS MOSFET I R F801 0
Applications
0 High frequency DC-DC converters HEXFET® Power MOSFET
0 UPS and Motor Control
Voss RDS(on) max ID
Benefits 100V 15mQ 80A©
o Low Gate-to-Drain Charge to Reduce
Switching Losses
0 Fully Characterized Capacitance Including
Effective Coss to Simplify Design, (See
App. Note AN1001)
q Fully Characterized Avalanche Voltage x . ',
and Current ='+
q Typical RDs(on) = 12mQ
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
ID © To = 25''C Continuous Drain Current, Vss © 10V 80©
ID @ To = 100°C Continuous Drain Current, Ves © 10V 57 A
'DM Pulsed Drain Current OD 320
PD @TC = 25°C Power Dissipation 260 W
Linear Derating Factor 1.8 W/°C
VGS Gate-to-Source Voltage 1 20 V
dv/dt Peak Diode Recovery dv/dt G) 16 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw 1.1(10) NOm (lbein)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 0.57
Recs Case-to-Sink, Flat, Greased Surface 0.50 - °C/W
ReJA Junction-to-Ambient - 62
Notes co through © are on page 8
1
08/23/02
IRF8010
International
Static © To = 25°C (unless otherwise specified) TOR Rectifier
Parameter Min. Typ. Max. Units Conditions
V(Bnmss Drain-to-Source Breakdown Voltage 100 - - V Vss = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.11 - V/°C Reference to 25°C, ID = 1mA
Roam) Static Drain-to-Source On-Resistance - 12 15 mn Vss = 10V, ID = 45A G)
VGS(th) Gate Threshold Voltage 2.0 - 4.0 v Vos = Vss, ID = 250pA
loss Drain-to-Source Leakage Current - - 2O pA Vos = 100V, l/ss = 0V
- - 250 Vos = 100v, Vss = OV, TJ = 125°C
less Gate-to-Source Forward Leakage -- -- 200 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -200 Vss = -20V
Dynamic @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 82 - - V I/os = 25V, ID = 45A
A Total Gate Charge - 81 120 ID = 80A
As Gate-to-Source Charge -- 22 - nC Vos = 80V
di Gate-to-Drain ("Miller") Charge - 26 - Vss = 10V ©
tum) Turn-On Delay Time - 15 - VDD = 50V
t, Rise Time -- 130 - ID = 80A
tam) Turn-Off Delay Time - 61 - ns Rs = 39n
t, Fall Time - 120 - Vss = 10V ©
Ciss Input Capacitance - 3830 -- Vss = 0V
Coss Output Capacitance - 480 - Vos = 25V
Crss Reverse Transfer Capacitance - 59 - pF f = 1.0MHz
Coss Output Capacitance - 3830 - Vss = 0V, Vos = 1.0V, f = 1.0MHz
Cass Output Capacitance - 280 - l/ss = 0V, Vos = 80V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 530 - l/ss = 0V, Vos = 0V to 80V ©
Avalanche Characteristics
Parameter
u se v e
Diode Characteristics
Max. Units
310 mJ
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 80 MOSFET symbol J
(Body Diode) A showing the
ISM Pulsed Source Current - - 320 integral reverse G
(Body Diode) co© p-n junction diode. S
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 80A, VGS = 0V GD
trr Reverse Recovery Time - 99 150 ns T J = 150°C, IF = 80A, VDD = 50V
Qrr Reverse RecoveryCharge - 460 700 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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