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IRF7F3704
20V Single N-Channel Hi-Rel MOSFET in a TO-205AF package
PD - 94340A
International
TOR, Rectifier
HEXFET® POWER MOSFET IRF7F3704
THRU-HOLE (TO-39) 20V, N-CHANNEL
Product Summary
Part Number BVDSS RDS(on) ID
IRF7F3704 20V 0.0359 12A* .5;
Seventh Generation HEXFETO power MOSFETs from TO-39
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the Features:
fast switching speed and ruggedized device design
n Low RDS(on)
Lfii‘vfifsxtfifile‘égfittffiifiilfieaniz.feef%£§:t“32vfiiz " AvaIawhe Fy.ryy..Ratings
for use in a wide variety of applications. I Dynamic fu/It Rahng
II Simple Drive Requirements
These. devices are weII-stJited for applications such " Ease of Paralleling
as switching power supphes, mot.o.r.c.ontrols, invert- n Hermetically Sealed
e.rs, shoppers, audio amplifiers and high-energy pulse n Light Weight
circuits.
Absolute Maximum Ratings
Parameter Units
ID @ VGS = 10V, TC = 25°C Continuous Drain Current 12*
ID @ VGS = 10V, TC = 100°C Continuous Drain Current 12* A
IDM Pulsed Drain Current C) 48
PD @ TC = 25°C Max. Power Dissipation 20 W
Linear Derating Factor 0.16 W/°C
VGS Gate-to-Source Voltage $20 V
EAS Single Pulse Avalanche Energy © 190 mJ
IAR Avalanche Current CO 12 A
EAR Repetitive Avalanche Energy (D 2.0 mJ
dv/dt Peak Diode Recovery dv/dt © 0.5 V/ns
TJ Operating Junction -55 to 150
TSTG Storage Temperature Range oC
Lead Temperature 300 ( 0.063 in./1.6mm from case for IOS)
Weight 0.98 (Typical) g
* Current is limited by package
For footnotes refer to the last page
1
02/18/01
IRF7F3704 International
TOR Rectifier
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDss Drain-to-Source Breakdown Voltage 20 - - V VGS = 0V, ID = 250pA
ABVDss/ATJ Temperature Coemcient of Breakdown - 0.024 - V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State - - 0.035 n VGS = 10V, t = 12A
Resistance - - 0.04 VGS = 4.5V, ID = 12A
VGS(th) Gate Threshold Voltage 1.0 - 3.0 V VDS = VGS, ID = 250PA
gfs Forward Transconductance 20 - - S M 1/DS =10V, ts = 12A CO
loss Zero Gate Voltage Drain Current - - 20 A VDS = 20V ,VGs=0V
- - 100 [l VDS = 16V,
VGS = 0V, TJ =125°C
less Gate-to-Source Leakage Forward - - 100 VGS =-20V
less Gate-to-Source Leakage Reverse - - -100 nA VGS = -20V
09 Total Gate Charge - - 19 W33 =4.5V, ID = 12A
Qgs Gate-to-Source Charge - - 8.0 nC VDS = 10V
di Gate-to-Drain ('Miller') Charge - - 6.0
td(on) Turn-On Delay Time - - 30 VDD = 10V, ID = 12A,
tr Rise Time - - 175 VGS = 4.5V, RG = 1.89
td(off) Turn-Off Delay Time - - 175 ns
tt FallTime - - 100
Ls+ LD Total Inductance - 7.0 - nH Measured from drain lead (6mm/
0.25in. from package) to source
lead (6mm/0.25in. from package)
Sissy Input Capacitance - 1860 - VGS = 0V, VDS = 10V
Cross Output Capacitance - 990 - pF f= 1.0MHz
Crss Reverse Transfer Capacitance - 55 -
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
ls Continuous Source Current (Body Diode) - - 12* A
ISM Pulse Source Current (Body Diode) C) - - 48
l/SD Diode Forward Voltage - - 1.3 V Tj = 25°C, Is = 12A, VGS = 0V co
trr Reverse Recovery Time - - 57 ns Tj = 25''C, IF = 12A, di/dt s 100A/ps
QRR Reverse Recovery Charge - - 60 nC VDD f 16V ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by Ls + LD.
* Current is limited by package
Thermal Resistance
Parameter Min Typ Max Units TestConditions
RthJC Junction-to-Case - - 6.25 °CNV
RthJA Junction-to-Ambient - - 175 Typical socket mount
Note: Corresponding Spice and Saber models are available on the Website.
For footnotes refer to the last page
2
