IRF7910 ,12V Dual N-Channel HEXFET Power MOSFET in a SO-8 packageApplications1 8S1 D12 7G1 D1Benefits3 6 Ultra-Low Gate ImpedanceS2 D2 Very Low R4DS(on) 5G2 D2 F ..
IRF7910 ,12V Dual N-Channel HEXFET Power MOSFET in a SO-8 packageApplications DSS DS(on) D 12V 15mΩ @V = 4.5V 10AHigh Frequency 3.3V and 5V input Point- GS ..
IRF7F3704 ,20V Single N-Channel Hi-Rel MOSFET in a TO-205AF packageapplications such Ease of Parallelingas switching power supplies, motor controls, invert- Hermeti ..
IRF7N60 , POWER MOSFET
IRF7N60 , POWER MOSFET
IRF8010 ,100V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplications®HEXFET Power MOSFET High frequency DC-DC converters UPS and Motor ControlV R max IDSS ..
ISL59534IKEZ , 32x16 Video Crosspoint
ISL5957IB ,14-bit, +3.3V, 260+MSPS, high speed D/A converter. Clock speed 260 MHz.FeaturesConverter• Low Power . . . . . 103mW with 20mA Output at 130MSPSThe ISL5957 is a 14-bit, 26 ..
ISL5961/2IB ,14-Bit/ +3.3V/ 130/210MSPS/ CommLinkTM High Speed D/A ConverterFeaturesTM CommLink High Speed D/A Converter• Speed Grades . . . . . . . . . . . . . . . . 130M and ..
ISL5961IA ,14-Bit/ +3.3V/ 130/210MSPS/ CommLinkTM High Speed D/A ConverterApplications Circuit ISL5961ONE CONNECTION(25, 19) NC D13 D13 (1)(15) SLEEPD12 D12 (2)DCOM ACOM(16) ..
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ISL59830AIAZ-T7 , True Single Supply Video Driver With Power Down
IRF7910
12V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
PD - 94419
International
Tart Rectifier IRF7910
HEXFET® Power MOSFET
Applications Vnss RDS(on) max ID
. High Frequency 3.3V and 5V input Point- 12V 15mf2 @Vss = 4.5V 10A
of-Load Synchronous Buck Converters for
Netcom and Computing Applications
. Power Management for Netcom,
Computing and Portable Applications
S1 Inn'- , 8 D1
Benefits G1 J_LZ f 7 D1
. Ultra-Low Gate Impedance S2 mi'- g; i) 1 D2 ‘®
0 Very Low RDS(on) G2 I
. Fully Characterized Avalanche Voltage _-_')
and Current Top View SO-8
Absolute Maximum Ratings
Symbol Parameter Max. Units
Vos Drain-Source Voltage 12 V
N/ss Gate-to-Source Voltage , 12 V
ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 10
ID @ TA = 70°C Continuous Drain Current, I/ss @ 4.5V 7.9 A
IDM Pulsed Drain CurrentCD 79
Po @TA = 25°C Maximum Power Dissipation@ 2.0 W
PD @TA = 70°C Maximum Power Dissipation@ 1.3 W
Linear Derating Factor 16 mW/°C
T: , TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Symbol Parameter Typ. Max. Units
' Junction-to-Drain Lead - 20 OCIW
ReJA Junction-to-Ambient co - 62.5
Notes co through © are on page 8
1
4/29/02
IRF7910
International
TOR Rectifier
Static @ Tu = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 12 - - V VGs = 0V, lo = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coemcient - 0.01 - V/°C Reference to 25°C, ID = 1mA
Roswn) Static Drain-to-Source On-Resistance - 11.5 15 mn I/ss = 4.5V, ID = 8.OA co
- 20 50 VGS = 2.8V, ID = 5.0A
VGS(lh) Gate Threshold Voltage 0.6 - 2.0 V Vos = VGS, ID = 250pA
loss Drain-to-Source Leakage Current - - 100 pA VDS = 9.6V, VGS = 0V
- - 250 Vros = 9.6V, VGs = 0V, To = 125°C
Isss Gate-to-Source Forward Leakage - - 200 n A VGS = 12V
Gate-to-Source Reverse Leakage - - -200 VGS = -12V
Dynamic © Tu = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gts Forward Transconductance 18 - - S Ws = 6.0V, ID = 8.0A
Qg Total Gate Charge - 17 26 ID = 8.0A
Q95 Gate-to-Source Charge - 4.4 - nC VDs = 6.0V
qu Gate-to-Drain ("Miller") Charge - 5.2 - l/ss = 4.5V
Qoss Output Gate Charge - 16 - VGS = 0V, VDS = 10V
tdwn) Turn-On Delay Time - 9.4 - VDD = 6.0V
tr Rise Time - 22 - ns ID = 8.0A
tam) Turn-Off Delay Time - 16 - Rs = 1.89
tr Fall Time - 6.3 - VGs = 4.5V ©
Ciss Input Capacitance - 1730 - I/ss = 0V
Coss Output Capacitance - 1340 - Vos = 6.0V
Crss Reverse Transfer Capacitance - 330 - pF f = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 100 mJ
IAR Avalanche CurrenKD - 8.0 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current 1 8 MOSFET symbol D
(Body Diode) - - . A showing the
ISM Pulsed Source Current 79 integral reverse G
(Body Diode) (D - - p-n junction diode. s
Vso Diode Forward Voltage - 0.85 1.3 V TJ = 25°C, Is = 8.0A, VGS = 0V ©
- 0.70 - To = 125°C, IS = 8.0A, VGs = 0V (3
trr Reverse Recovery Time - 50 75 ns To = 25°C, IF = 8.0A, VR =12V
Qrr Reverse Recovery Charge - 60 90 nC di/dt = 100A/ps ©
trr Reverse Recovery Time - 51 77 ns To = 125°C, IF = 8.0A, VR =12V
Qrr Reverse Recovery Charge - 60 90 nC di/dt = 100Alps ©
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