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IRF7904-IRF7904TRPBF
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
International
TOR Rectifier
PD - 96919B
IRF7904PbF
HEXFET@ Power MOSFET
Applications
. Dual SO-8 MOSFET for POL Voss RDSM) max lD
Converters in Notebook Com uters, Servers, -
Graphics Cards, Game Consgles 30V Q1 1th2mf2@Vss - 10V 7.6A
and Set-Top Box Q2 10.8mQ@VGS = 10V 11A
Benefits
o Ve Low R at 4.5V V
o LvayGate 'ildft, GS G1 I E D1 ','s, is J l
q Fully Characterized Avalanche Voltage S2 [Z ' - E Sl / D2 ,sJ".,,ijC"),' 'iJj,,','C)'''
and Current S2 E E s1/D2 c/SCP-e
o 20V VGS Max. Gate Rating G2 [I E S1/D2
o Improved Body Diode Reverse Recovery
o 100% Tested for Rs SO-8
o Lead-Free
Absolute Maximum Ratings
Parameter Q1 Max. I Q2 Max. Units
Vos Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage : 20
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 7.6 11
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 6.1 8.9 A
G, Pulsed Drain Current OD 61 89
PD @TA = 25°C Power Dissipation 1.4 2.0 W
PD @TA = 70°C Power Dissipation 0.9 1.3
Linear Derating Factor 0.011 0.016 W/°C
TJ Operating Junction and -55 to + 150 °C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Q1 Max. Q2 Max. Units
' Junction-to-Drain Lead s 20 20 °C/W
Roo, Junction-to-Ambient ©S 90 62.5
1
07/10/06
IRF7904PbF
International
TO.R Rectifier
Static © T., = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage Q1&Q2 30 - - V Ves = 0V, lo = 250pA
ABI/ross/AT: Breakdown Voltage Temp. Coemcient Q1 - 0.024 - V/''C Reference to 25°C, ID = 1mA
Q2 - 0.024 -
Q1 - 11.4 16.2 Vss=10V,lcs= 7.6A ©
Rosmn) Static Drain-to-Source On-Resistance - 14.5 20.5 mn VGs = 4.5V, Io = 6.1A ©
Q2 - 8.6 10.8 Ves=10V1|D=11A©
- 1O 13 V93 = 4.5V, ID = 8.8A ©
VGSM Gate Threshold Voltage Q1&Q2 1.35 - 2.25 v Q1: Vos = Ves, b = 25PA
AVGSMIATJ Gate Threshold Voltage Coefficient Q1 - -5.0 - mV/°C Q2: I/os = Vas, ID = 50pA
Q2 - -5.0 -
IDSS Drain-to-Source Leakage Current Q1&Q2 - - 1.0 pA VDS = 24V, VGS = 0V
Q1&Q2 - - 150 VDS = 24V, VGS = ov, To = 125°C
less Gate-to-Source Forward Leakage Q1802 - - 100 nA Ves = 20V
Gate-to-Source Reverse Leakage Q1&Q2 - - -100 VGs = -20V
gfs Forward Transconductance Q1 17 - - S Vos = 15V, b = 6.1A
Q2 23 _ _ Vros = 15V, ID = 8.8A
Q, Total Gate Charge Q1 - 7.5 11
Q2 - 14 21
Qase Pre-Vth Gate-to-Source Charge Q1 - 2.2 - Q1
Q2 - 3.7 - vDS = 15V
Q1152 Post-Vth Gate-to-Source Charge Q1 - 0.6 - nC I/ss = 4.5V, ID = 6.1A
Q2 - 1 .1 -
di Gate-to-Drain Charge Q1 - 2.5 - Q2
Q2 - 4.8 - Vros = 15V
qud, Gate Charge Overdrive Q1 --.- 2.2 - I/ss = 4.5V, b = 8.8A
Q2 - 4.4 -
st Switch Charge (0952 + di) Q1 - 3.1 -
Q2 - 5.9 -
Qoss Output Charge Q1 - 4.5 - nC Vos = 16V, Vss = OV
Q2 - 9.1 -
RG Gate Resistance Q1 - 3.2 4.8 Q
Q2 -- 2.9 4.4
tum") Turn-On Delay Time Q1 - 6.9 - Q1
Q2 - 7.8 - VDD = 15V,VGs = 4.5V
t, Rise Time Q1 - 7.3 - ID = 6.1A
Q2 - 10 - ns
td(off) Turn-Off Delay Time Q1 - 10 - Q2
Q2 - 15 - VDD = 15V, VGS = 4.5V
t, Fall Time Q1 - 3.2 - ID = 8.8A
Q2 - 4.6 - Clamped Inductive Load
Ciss Input Capacitance Q1 - 910 -
Q2 - 1780 - Ves = 0V
Coss Output Capacitance Q1 - 190 - pF Vos = 15V
Q2 - 390 - f = 1.0MH2
Crss Reverse Transfer Capacitance Q1 - 94 -
Q2 - 180 -
Avalanche Characteristics
Parameter Typ. Q1 Max. Q2 Max. Units
EAS Single Pulse Avalanche Energy © - 140 250 mJ
IAR Avalanche Current C) - 6.1 8.8 A
Diode Characteristics
Parameter Min Typ. Max. Units Conditions
Is Continuous Source Current Q1 - - 1.8 A MOSFET symbol _ -, /
(Body Diode) Q2 - - 2.5 showing the l F A ‘1
ISM Pulsed Source Current Q1 - - 61 A integral reverse 5* 1 -
(Body Diode) (D Q2 - - 88 p-n junction diode. - -',
I/so Diode Forward Voltage Q1 - - 1.0 v Tu = 25°C. Is = 6.1A, VGs = 0V ©
Q2 - - 1.0 Tu = 25°C, Is = 8.8A, VGS = 0V ©
trr Reverse Recovery Time Q1 - 11 17 ns Q1 T: = 2510, IF = 6.1A,
Q2 - 16 24 VDD = 15V, di/dt = 100A/ps ©
Qrr Reverse Recovery Charge Q1 - 2.6 3.9 nC Q2 T: = 25°C, IF = 8.8A,
Q2 - 6.9 10 VDD = 15V, di/dt = 1OOA/ps ©
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