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IRF7902TRPBF
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
International
TOR Rectifier
PD - 97194A
IRF7902PbF
HEXFET@ Power MOSFET
Applications
. Dual SO-8 MOSFET for POL Voss RDS(on) max ID
fonu.e.rtert In Notebook Computers, Servers, 30V Q1 22-6mQ@VGS = 10V 6.4A
Graphics Cards, Game Consoles
and Set-Top Box Q2 14.4mQ@VGS = 10V 9.7A
Benefits
q Very Low RDS(0n) at 4.5V VGS G1 [1: = D1
0 Low Gate Charge
q Fully Characterized Avalanche Voltage S2 D: ICC] S1 / D2
and Current S2 D]: = S1 /D2
0 Improved Body Diode Reverse Recovery
q Lead-Free SO-8
Absolute Maximum Ratings
Parameter Q1 Max. I Q2 Max. Units
I/os; Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage i 20
ID @ TA = 25°C Continuous Drain Current, I/ss @ 10V 6.4 9.7
ID @ TA = 70°C Continuous Drain Current, I/ss @ 10V 5.1 7.8 A
a, Pulsed Drain Current co 51 78
PD @TA = 25°C Power Dissipation 1.4 2.0 W
PD @TA = 70°C Power Dissipation 0.9 1.3
Linear Derating Factor 0.011 0.016 W/°C
TJ Operating Junction and -55 to + 150 "C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Q1 Max. 02 Max. Units
ROJL Junction-to-Drain Lead S 20 20 °CIW
RBJA Junction-to-Ambient coco 90 62.5
07/10/06
|RF7902PbF
International
TO.R Rectifier
Static © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVoss Drain-to-Source Breakdown Voltage Q1&Q2 30 - - V Vss = ov, ID = 250PA
ABVDSS/ATJ Breakdown Voltage Temp. Coemcient Q1 - 0.023 - V/''C Reference to 25°C. ID = 1mA
Q2 - 0.025 -
Q1 - 18.1 22.6 Ves = 10V, ID = 6.4A ©
Rrosom Static Drain-to-Source On-Resistance - 23.8 29.7 mn I/ss = 4.5V, ID = 5.1A ©
Q2 - 11.5 14.4 Ves = 10V, ID = 9.7A ©
- 14.9 18.7 VGS = 4.5V,ID = 7.8A ©
l/GSO) Gate Threshold Voltage Q1&Q2 1.35 1.8 2.25 V Vos = Ves. b = 25PA
AVGsm/ATJ Gate Threshold Voltage Coemcient Q1 -4.7 - mV/°C
Q2 - -5.9 -
loss Drain-to-Source Leakage Current Q1&Q2 - - 1.0 pA Vos = 24V,Vss = 0V
Q1&Q2 - - 150 Vos = 24V,Vss = OV, T, = 125°C
less Gate-to-Source Forward Leakage Q1&Q2 - - 100 nA VGs = 20V
Gate-to-Source Reverse Leakage Q1&Q2 - -100 I/ss = -20V
gfs Forward Transconductance Q1 - - S Vos = 15V, ID = 5.1A
Q2 _ _ Vos = 15V, b = 7.8A
Q, Total Gate Charge Q1 4.6 6.9
Q2 - 6.5 9.8
0051 Pre-Vth Gate-to-Source Charge Q1 - 0.9 Q1
Q2 - 1.4 - Vos = 15V
0032 Post-Vth Gate-to-Source Charge Q1 - 0.5 - nC VGS = 4.5V, ID = 5.1A
Q2 - 0.8 -
Qua Gate-to-Drain Charge Q1 - 1.8 - Q2
Q2 - 2.3 - I/os = 15V
andr Gate Charge Overdrive Q1 - 1.4 - VGS = 4.5V, ID = 7.8A
Q2 - 2.0 -
st Switch Charge (0052 + Qud) Q1 - 2.3 -
Q2 - 3.1 -
Qoss Output Charge Q1 - 3.0 - nC I/os = 16V, Ves = 0V
Q2 - 4.4 -
Rs Gate Resistance Q1 - 3.1 4.9 Q
Q2 - 3.1 4.9
tam", Turn-On Delay Time Q1 - 7.4 Q1
Q2 - 6.1 - VDD = 15V, VGS = 4.5V
t, Rise Time Q1 - 8.2 - b = 5.1A
Q2 - 8.6 - ns
{mom Turn-Off Delay Time Q1 - 8.4 - Q2
Q2 - 8.2 - VDD = ftiV,b(ss = 4.5V
t, Fall Time Q1 - 3.4 - b = 7.8A
Q2 - 3.3 - Clamped Inductive Load
Ciss Input Capacitance Q1 - 580 -
Q2 - 900 - VGS = 0V
Coss Output Capacitance Q1 - 130 - pF Vos = 15V
Q2 - 190 - f = 1.0MHz
Crss Reverse Transfer Capacitance Q1 - 74 -
Q2 - 86 -
Avalanche Characteristics
Parameter Typ. Q1 Max. Q2 Max. Units
EAS Single Pulse Avalanche Energy © - 3.4 7.3 mJ
|AR Avalanche Current C) - 5.1 7.8 A
Diode Characteristics
Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current Q1 - - 1.7 A MOSFET symbol m-'" ----,'
(Body Diode) Q2 - - 2.5 showing the l L r,
G, Pulsed Source Current Q1 - - 51 A integral reverse li, f---. /
(Body Diode) C) Q2 - - 78 p-njunction diode. ", K .",
I/so Diode Forward Voltage Q1 - - 1.0 v TJ = 25''C, Is = 5.1A, VGs = 0V ©
Q2 - - 1.0 TJ = 25°C, Is = 7.8A, VGS = 0V ©
trr Reverse Recovery Time Q1 - 7.8 12 ns Q1 TJ = 25°C. IF = 5.1A,
Q2 _ 12 18 VDD = 15V, di/dt = 100A/ps ©
Qrr Reverse Recovery Charge Q1 - 1.5 2.3 no Q2 TJ = 25°C, IF = 7.8A,
Q2 - 3.1 4.7 VDD = 15V, di/dt = 100A/ps ©
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