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IRF7902TRPBF from IR,International Rectifier

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15.625ms

IRF7902TRPBF

Manufacturer: IR

30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package

Partnumber Manufacturer Quantity Availability
IRF7902TRPBF IR 5000 In Stock

Description and Introduction

30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package The IRF7902TRPBF is a Power MOSFET manufactured by Infineon Technologies. Below are the key specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Manufacturer:** Infineon Technologies  
### **Part Number:** IRF7902TRPBF  
### **Type:** N-Channel Power MOSFET  
### **Package:** PQFN 5x6  

### **Key Specifications:**  
- **Drain-Source Voltage (VDS):** 30V  
- **Continuous Drain Current (ID):** 70A  
- **Pulsed Drain Current (IDM):** 280A  
- **Power Dissipation (PD):** 200W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 2.1mΩ (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 1.35V (min), 2.35V (max)  
- **Total Gate Charge (Qg):** 110nC (typ)  
- **Input Capacitance (Ciss):** 5700pF (typ)  

### **Features:**  
- **Low On-Resistance:** Optimized for high-efficiency power switching.  
- **Fast Switching Speed:** Suitable for high-frequency applications.  
- **Avalanche Rated:** Robust design for reliable operation.  
- **Lead-Free & RoHS Compliant:** Environmentally friendly.  
- **Low Gate Charge:** Enhances switching performance.  

### **Applications:**  
- DC-DC Converters  
- Motor Control  
- Power Management  
- Synchronous Rectification  

This information is based solely on the manufacturer's datasheet and technical documentation.

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