IRF7901D1TRPBF ,30V FETKY
IRF7901D1TRPBF ,30V FETKY
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IRF7901D1TRPBF
30V FETKY
PD- 95226
IRF79(MD'1PbF
Dual FETKYTM
Co-Packaged Dual MOSFET Plus Schottky Diode
International
TOR Rectifier
. Co-Pack Dual N-channel HEXFEP Power MOSFET
and Schottky thode
. Ideal for Synchronous Buck DC-DC
Converters Up to 5A Peak Output
Low Conduction Losses
. _ Device Ratings (Max.Values)
. Low Switching Losses
Low Vt Schottky Rectifier OI t12
Lead-Free 01 Pw and Schottky
st'" 'C,-) " Mn V 30V 30V
yr l: 13/ H 7 PM DS
me l' Roam) 38 mn 32 mn
P20 I: (tiii' b m % 10.5 nC 18.3 nC
Car: ' tr, _:] '(g, c)aw 3.8 nC 9.0 nC
lop Mav v, 1.0V 0.52V
Deseription
The FETKY"' family of Co-Pack HExFETeMoSFETs and Schottky diodes offers the designer an Innovative.
board space savmg solution for switching regulator and power management applications. Advanced
HEXFET“MOSFETs combined with low forward drop Schottky results in an extremely efficient device suitable
for a wide variety of portable electronics applications.
The SO-8 has been modified through a customized leadlrame for enhanced thermal characteristics and multiple
die capability making it ideal in a variety of power applications. With these Improvements, multiple devices can
be used in an application with dramatically reduced board space. Internal connections enable easier board
layout design with reduced stray inductance.
Absolute Maximum Ratings
Parameter Symbol IRF7901D1 Units
Drain-Source Voltage Vm 30 V
Gate-Source Voltage Vas :20
Continuous Output T, = 100°C ID 6.2 A
Current (Va, k 4.5V)©
Pulsed Drain CurrentO) IBM 24
Power Dissipation® l TL =10ty'C Pr, 2.0 w
Junction & Storage Temperature Range TJ,TS,G -55 to 150 °C
Pulsed Source Current C) IS” 12 A
Thermal Resistance
Parameter Max. Units
Maximum Junction-to-Ambient® Rm 62.5 "C/W
Maximum Junction-to-Lead© ML 25 "C/W
1
10/8/04
IRF7901D1PbF International
TOR Rectifier
Electrical Characteristics Cl . Control FET G! . Synch FET
' Schottky
Parameter Min Typ Max Min Typ Max Units Conditions
Drain-to-Source anss 30 - - 30 - - V Vas = OV, ID = 250pA
Breakdown Voltage'
Static Drain-Source Rm(on) - 28 38 - 23 32 rm VGs = 4SV, lo = 5AO)
on Resistanco"
GataThreshold Voltago' Vas(th) 1.0 - - 1.0 - - V Vos = Vas, ID = 250PA
Drain-Source Leakage loss - - 30 - - 30 pA Vma = 24V, Vas = 0
- - 0.15 - - 4.3 mA Vos=24V,Vos=0.TJ=125°C
Gate-Source Leakage lass - - 1100 - - 1100 nA Vas = 220V
Current'
Total Gate Charge" A, m - 7.6 10.5 - 15.5 21.0 Vas = w, VD.3 =16V.ID = 5A
oc. .m- - 6.7 9.0 - 13.5 18.3 V05: 5V, V05: 100mV, ID: 5A
Pre-Vlh Q., - 2.0 - - 5.5 - V = 16V. I = 5A
Gate-Source Charge 1.3. tm o
Posthth tu, - 0.5 - - 0.9 - nC
Gate-Sourco Charge
Gate to Drain Charge Au, - 1.9 - - 4.7 -
Switch Charge' ta,. - 2.4 3.8 - 5.6 9.0
(OW + tl.,)
Output Charge' th,, - 13.5 18.0 - 9.0 12.3 Vos = 16V, Vas = 0
Gate Resistanca R, - 3.4 - - 4.3 - n
Inpu1Capacitance C " - 780 - - 1810 -
Output Capacitance Co,, - 430 - - 310 - pF Vus = 16V. Vas = 0.1:1MH2
Transfer Capacitance Crs, - 30 - - 110 -
Tum-On Delay Time tJon) - 7.2 - - 10.4 - Va, = 16V. It2 = 5A, W., = 5V
Rise Time t, - 13.8 - - 16.4 - ns Clamped Inductive Wad
Tum-011 DelayTime 14011) - 14.7 - - 14.6 - See test diagram Fig 17.
FallTrno t, - 8 - - 5.2 -
Source-Draln Ratings and Characteristics
01 02 &
parallel Scholtky
Parameter Min Typ Max Min Typ Max Units Conditions
Diode Forward l/a, - 0.7 1.0 - 0.48 0.52 V ls = IA, V55 = 0V
Vonaqe'Q
Reverse Recovery o,, - 62.3 - - 8.9 - nC db'dl: 700Nus
Charge Vos = 16V, Vas = 0V. l, = 5A
-. . ct, Cotrtmteo O1, 02 1m tt Pwr v,., puts, Calculated commuous
LV Repetllfye raung. 'use width lmnea by max.pnc1:on lemperature. current based on maximum allowame juncnon Iemperature,'
© Pulse math f 30° YS,' duty cycle f 2%. swuomng or other Iosses will decrease RMS current capability
© When mouniad M l inch square copper board, te 10 soc. ut When mounted on IRNBPSZ desrgn m. Measured as device T,
to Pm leads N,, a V,.,)
Dames are 100% tested to these parameters.
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