IRF7862TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 package IRF7862PbFHEXFET Power MOSFET
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IRF7862-IRF7862TRPBF
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD - 97275B
International
TOR Rectifier IRF7862PbF
HEXFET© Power MOSFET
Applications
q Synchronous MOSFET for Notebook VDSS RDS(on) max tity
Processor Power 30V &3mf2@Vas = 10V 30nC
o Synchronous Rectifier MOSFET for
Isolated DC-DC Converters
. s EED‘ ' a 3]] D
Benefits 2 7
s ED] H ID D
q Very Low RDS(on) at 4.5V l/ss a m i
o UItra-Low Gate Impedance S E E D
o Fully Characterized Avalanche Voltage G m4 SID D
and Current Top View SO-8
q 20V Vss Max. Gate Rating
q 100% tested for Rg
o Lead-Free
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 30 V
I/ss Gate-to-Source Voltage t 20
ID © T, = 25°C Continuous Drain Current, Vss @ 10V 21
ID @ TA = 70°C Continuous Drain Current, Vss @ 10V 17 A
IDM Pulsed Drain Current © 170
PD @TA = 25°C Power Dissipation 2.5 W
PD @TA = 70°C Power Dissipation 1.6
Linear Derating Factor 0.02 WPC
TJ Operating Junction and -55 to + 150
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
Rom. Junction-to-Drain Lead 6) - 20
RNA Junction-to-Ambient © --- 50 C/IN
Notes co through © are on page 9
1
06/04/09
IRF7862PbF
International
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V Vss = 0V, ID = 250PA
ABN/oss/AT, Breakdown Voltage Temp. Coefficient -- 0.023 -- VPC Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance -- 3.0 3.3 Vss = 10V, ID = 20A oo
-- 3.7 4.5 mn Vos = 4.5V, ID =16A ©
VGS(th) Gate Threshold Voltage 1.35 --- 2.35 V Vos = Vss, ID = 100pA
AVGS(th) Gate Threshold Voltage Coefficient - -5.4 - mV/°C Vos = Vss, ID = 250pA
loss Drain-to-Source Leakage Current - - 1.0 Vos = 24V, Vss = 0V
- - 150 pA Vos = 24V, I/ss = 0V, T, = 125°C
less Gate-to-Source Forward Leakage - - 100 Vas = 20V
Gate-to-Source Reverse Leakage - - -100 nA Vas = -20V
gfs Forward Transconductance 87 - - S Vos = 15V, ID = 16A
09 Total Gate Charge - 30 45
0951 Pre-Wh Gate-to-Source Charge - 7.5 - Vos = 15V
Asst Post-Vth Gate-to-Source Charge - 3.1 - Vss = 4.5V
di Gate-to-Drain Charge -- 9.8 -- nC ID = 16A
ngdr Gate Charge Overdrive - 9.6 - See Figs. 15 & 16
st Switch Charge (Q952 + di) - 12.9 -
Qoss Output Charge - 18 - nC Vos = 16V, l/ss = 0V
Rg Gate Resistance - 1.0 1.6 Q
td(on) Turn-On Delay Time - 16 - Vor, = 15V, I/ss = 4.5V
t, Rise Time - 19 - ID =16A
tam) Turn-Off Delay Time - 18 - ns Re = 1.89
t, Fall Time - 11 - See Fig. 18
Ciss Input Capacitance - 4090 - Vas = ov
Coss Output Capacitance - 810 - pF Vos = 15V
Crss Reverse Transfer Capacitance -- 390 -- f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAs Single Pulse Avalanche Energy © - 350 mJ
IAR Avalanche Current (D - 16 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current 3 1 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current - _ 170 integral reverse G
(Body Diode) OD p-n junction diode. s
Vso Diode Forward Voltage - - 1.0 V TJ = 25°C, ls = 16A, VGS = 0V OD
tn Reverse Recovery Time - 17 26 ns To = 25°C, IF = 16A, VDD = 15V
2, Reverse Recovery Charge - 33 50 nC di/dt = 430A/ps ©
ton Forward Tum-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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