IRF7855TRPBF ,60V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 packageApplications3 6S D4 5G DBenefits Low Gate to Drain Charge to ReduceSO-8Top View Switching Loss ..
IRF7862 ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R maxQgDSS DS(on) Synchronous MOSFET for NotebookProcessor Power3.3m @V = 10V30V
IRF7855TRPBF
60V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package
International
TOR. Rectifier
Applications
0 Primary Side Switch in Bridge Topology
in Isolated DC-DC Converters
q Primary Side Switch in Push-Pull
Topology for 18-36Vin Isolated DC-DC
Converters
0 Secondary Side Synchronous
Rectification Switch for 15Vout
0 Suitable for 48V Non-Isolated
Synchronous Buck DC-DC Applications
PD - 97173A
IRF7855PbF
H EXFET© Power MOSFET
RDS(on) max
9.4mg2@VGS = 10V
Benefits
0 Low Gate to Drain Charge to Reduce -._... SO-8
Switching Losses Top View
. Fully Characterized Capacitance Including
Effective Coss to Simplify Design, (See
App. Note AN1001)
0 Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain-to-Source Voltage 60 V
Ves Gate-to-Source Voltage t 20
ID @ TA = 25°C Continuous Drain Current, Vss © 10V 12 A
ID @ TA = 70°C Continuous Drain Current, Vss © 10V 8.7
IDM Pulsed Drain Current OD 97
Po @TA = 25°C Maximum Power Dissipation © 2.5 W
Linear Derating Factor 0.02 W/°C
dv/dt Peak Diode Recovery dv/dt © 9.9 V/ns
Tu Operating Junction and -55 to + 150 ''C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
Rom. Junction-to-Drain Lead - 20 °C/W
ROJA Junction-to-Ambient (PCB Mount) ©© - 50
Notes co through co are on page 8
1
05/17/06
IRF7855PbF
International
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 - - V l/ss = 0V, ID = 250uA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 72 - mV/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 7.4 9.4 mg Vss = 10V, ID = 12A Ci)
VGS(lh) Gate Threshold Voltage 3.0 - 4.9 V Vos = l/ss, ID = 100pA
loss Drain-to-Source Leakage Current - - 20 pA Vos = 60V, Ves = 0V
- - 250 Vos = 60V, Vss = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -100 l/ss = -20V
Dynamic tii! To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 14 - - S Vros = 25V, b = 7.2A
q, Total Gate Charge - 26 39 b = 7.2A
Qgs Gate-to-Source Charge - 6.8 - nC Vos = 30V
di Gate-to-Drain ("Miller") Charge - 9.6 - Vss = 10V ©
lion) Turn-On Delay Time - 8.7 - VDD = 30V
t, Rise Time - 13 - ID = 7.2A
td(off) Turn-Off Delay Time __- 16 -.-.- ns Rs = 6.29
t, Fall Time - 12 - Ves = 10V co
Ciss Input Capacitance - 1560 - Ves = 0V
Coss Output Capacitance - 440 - Vos = 25V
Crss Reverse Transfer Capacitance - 120 - pF f = 1.0MHz
Coss Output Capacitance - 1910 - l/ss = OV, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 320 - l/ss = 0V, Vros = 48V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 520 - l/ss = 0V, Vos = 0V to 48V s
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 54o mJ
|AR Avalanche Current 0) - 7.2 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 2.3 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 97 integral reverse G
(Body Diode) T p-n junction diode. S
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, ls = 7.2A, l/tss = 0V co
trr Reverse Recovery Time - 33 50 ns TJ = 25°C, IF = 7.2A, VDD = 25V
Qrr Reverse Recovery Charge - 38 57 n0 di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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