IRF7854PBF ,80V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 packageApplications2 7S D3 6BenefitsS D Low Gate to Drain Charge to Reduce 4 5G D Switching LossesSO- ..
IRF7855TRPBF ,60V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 packageApplications3 6S D4 5G DBenefits Low Gate to Drain Charge to ReduceSO-8Top View Switching Loss ..
IRF7862 ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R maxQgDSS DS(on) Synchronous MOSFET for NotebookProcessor Power3.3m @V = 10V30V
IRF7854-IRF7854PBF
80V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package
International
TOR. Rectifier
Applications
q Primary Side Switch in Bridge or two-
switch forward topologies using 48V
(110%) or 36V to 60V ETSI range inputs.
PD - 97172
IRF7854PbF
H EXFET© Power MOSFET
RDS(0n) max lD
13.4mQ@VGS = 10V
q Secondary Side Synchronous
Rectification Switch for 12Vout
q Suitable for 48V Non-Isolated
Synchronous Buck DC-DC Applications
Benefits
o Low Gate to Drain Charge to Reduce
Switching Losses
. . . . SO-8
o Fully Characterized Capacitance Including Top View
Effective Cogs to Simplify Design,
(See App. Note AN1001)
o Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 80 V
Vas Gate-to-Source Voltage t 20
ID @ TA = 25°C Continuous Drain Current, Vss © 10V 10 A
In © TA = 70°C Continuous Drain Current, l/ss @ 10V 7.9
IDM Pulsed Drain Current OD 79
PD @TA = 25°C Maximum Power Dissipation 2.5 W
Linear Derating Factor 0.02 W/°C
dv/dt Peak Diode Recovery dv/dt © 11 V/ns
TJ Operating Junction and -55 to + 150 I
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
ROJL Junction-to-Drain Lead - 20 °CNV
ROJA Junction-to-Ambient (PCB Mount) ©© _ 50
Notes co through co are on page 8
1
01/05/06
IRF7854PbF
International
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 80 - - V Vss = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.095 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance -- 11 13.4 mg Vss = 10V, ID = 10A ©
VGS(th) Gate Threshold Voltage 3.0 - 4.9 V Vos = Vss, ID = 100pA
loss Drain-to-Source Leakage Current - - 20 pA Vos = 80V, Vss = 0V
- - 250 Vos = 80V, Vss = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Ves = 20V
Gate-to-Source Reverse Leakage - - -100 Vas = -20V
Dynamic © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 12 - - S Vos = 25V, ID = 6.0A
q, Total Gate Charge - 27 41 ID = 6.0A
Qgs Gate-to-Source Charge - 7.7 - nC Vos = 40V
di Gate-to-Drain ("Miller") Charge - 8.7 - Vss = 10V GD
tom Turn-On Delay Time - 9.4 - VDD = 40V
t, Rise Time - 8.5 - ID = 6.0A
tron Turn-Off Delay Time __- 15 __- ns Rs = 6.29
tr Fall Time - 8.6 - Vss = 10V C)
Ciss Input Capacitance - 1620 - l/ss = 0V
Coss Output Capacitance - 350 - Vos = 25V
Crss Reverse Transfer Capacitance - 86 - pF f = 1.0MHz
Coss Output Capacitance - 1730 - Vas = 0V, VDs = 1.0V, f = 1.0MHz
Coss Output Capacitance - 230 - Vas = 0V, VDs = 64V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 410 - Vas = 0V, Vros = 0V to 64V S
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© _ 110 ml
|AR Avalanche Current (D - 6.0 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 2.3 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 79 integral reverse G
(Body Diode) C) p-n junction diode. S
VSD Diode Forward Voltage - - 1.3 V To = 25°C, ls = 6.OA, l/ss = 0V C)
trr Reverse Recovery Time - 43 65 ns To = 25°C, IF = 6.0A, VDD = 25V
a,, Reverse Recovery Charge - 76 110 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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