IRF7853 ,100V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 packageApplications4 5G DBenefits Low Gate to Drain Charge to Reduce SO-8Top View Switching Losses F ..
IRF7853TRPBF , Primary Side Switch in Bridge Topology
IRF7854 ,80V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 packageApplications Primary Side Switch in Bridge or two-V R max IDSS DS(on) Dswitch forward topologies u ..
IRF7854PBF ,80V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 packageApplications2 7S D3 6BenefitsS D Low Gate to Drain Charge to Reduce 4 5G D Switching LossesSO- ..
IRF7855TRPBF ,60V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 packageApplications3 6S D4 5G DBenefits Low Gate to Drain Charge to ReduceSO-8Top View Switching Loss ..
IRF7862 ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R maxQgDSS DS(on) Synchronous MOSFET for NotebookProcessor Power3.3m @V = 10V30V
IRF7853
100V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package
PD - 97069
International
TOR. Rectifier IRF7853PbF
H EXFET© Power MOSFET
Applications
q Primary Side Switch in Bridge Topology
in Universal Input (36-75Vin) Isolated Voss RDson) max ID
DC-DC Converters 100V 18mQ@VGS = 10V 8.3A
0 Primary Side Switch in Push-Pull
Topology for 18-36Vin Isolated DC-DC
Converters
o Secondary Side Synchronous
Rectification Switch for 15Vout
o Suitable for 48V Non-Isolated
Synchronous Buck DC-DC Applications
Benefits
o Low Gate to Drain Charge to Reduce Top View SO-8
Switching Losses
0 Fully Characterized Capacitance Including
Effective Coss to Simplify Design, (See
App. Note AN1001)
0 Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 100 V
Vas Gate-to-Source Voltage 1 20
ID @ TA = 25°C Continuous Drain Current, Vas @ 10V 8.3 A
ID @ TA = 70°C Continuous Drain Current, l/ss @ 10V 6.6
IDM Pulsed Drain Current (D 66
PD @TA = 25°C Maximum Power Dissipation 2.5 W
Linear Derating Factor 0.02 W/°C
dv/dt Peak Diode Recovery dv/dt © 5.1 V/ns
To Operating Junction and -55 to + 150 °C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
ROJL Junction-to-Drain Lead - 20 ''C/W
Ram Junction-to-Ambient (PCB Mount) ©© - 50
Notes co through co are on page 8
1
1/5/06
IIRF7853PbF
International
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V Vas = 0V, ID = 250pA
AV(BH,Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.11 - V/°C Reference to 25°C, ID = 1mA
Rosom Static Drain-to-Source On-Resistance - 14.4 18 mf2 Vss = 10V, ID = 8.3A C)
V950,.) Gate Threshold Voltage 3.0 - 4.9 V Vos = Vas, ID = 100pA
IDSS Drain-to-Source Leakage Current - - 20 pA Vos = 100V, Vas = 0V
- - 250 Vos =100V,Vss = 0V, To = 125°C
less Gate-to-Source Forward Leakage - - 100 nA l/ss = 20V
Gate-to-Source Reverse Leakage - - -100 Vas = -20V
Dynamic © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 11 - - S Vos = 25V, ID = 5.0A
q, Total Gate Charge - 28 39 ID = 5.0A
Qgs Gate-to-Source Charge - 7.8 - nC Vos = 50V
di Gate-to-Drain ("Miller") Charge - 10 - Vss = 10V ©
Rs Gate Resistance - 1.4 - Q
td(on) Turn-On Delay Time - 13 - VDD = 50V
tr Rise Time - 6.6 - ID = 5.0A
tdwff) Turn-Off Delay Time - 26 - ns Rs = 6.29
t, Fall Time - 6.0 - Vas = 10V ©
Ciss Input Capacitance - 1640 - Vas = 0V
Coss Output Capacitance - 310 - l/rss = 25V
Crss Reverse Transfer Capacitance - 71 - pF f = 1.0MHz
cu, Output Capacitance - 1600 - Vas = 0V, VDS = 1.0V, f = 1.0MHz
Coss Output Capacitance - 180 - Vss = 0V, Vrys = 80V, f = 1.0MHz
Coss eff. Effective Output Capacitance --.- 320 --.- Vss = 0V, Vos = 0V to 80V s
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 610 mJ
|AR Avalanche Current C) - 5.0 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 2.3 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 66 integral reverse G
(Body Diode) (D p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 5.0A, l/ss = 0V ©
trr Reverse Recovery Time - 45 68 ns TJ = 25°C, IF = 5.0A, VDD = 25V
Qrr Reverse Recovery Charge - 84 130 nC di/dt = 100A/us ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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