IRF7836 ,30V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 packageApplicationsV R maxQgDSS DS(on) Synchronous MOSFET for Notebook30V 5.7m@V = 10V 18nCProcessor Pow ..
IRF7842 ,Power MOSFET(Vdss = 40 V)ApplicationsV R maxQg (typ.)DSS DS(on) Synchronous MOSFET for NotebookProcessor Power5.0m@V = 10V ..
IRF7842TR ,Leaded 40V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R maxQg (typ.)DSS DS(on) Synchronous MOSFET for NotebookProcessor Power5.0m@V = 10V ..
IRF7842TRPBF ,40V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplications Synchronous MOSFET for NotebookV R maxQg (typ.)DSS DS(on)Processor Power Secondary S ..
IRF7853 ,100V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 packageApplications4 5G DBenefits Low Gate to Drain Charge to Reduce SO-8Top View Switching Losses F ..
IRF7853TRPBF , Primary Side Switch in Bridge Topology
ISL58831 ,Dual Laser Driver with APC Amplifier and Spread Spectrum OscillatorApplicationsPinout• Combo CD-R + DVD-RISL58831• DVD±RW to 8X(24 LD QFN)TOP VIEW• Writable optical d ..
ISL59112IEZ-T7 , 40MHz Rail-to-Rail Video Buffer
ISL5927IN ,Dual 14-bit, +3.3V, 260+MSPS, high speed D/A converter. Clock speed 260 MHz.FeaturesD/A Converter• Low Power . . . . . 233mW with 20mA Output at 130MSPSThe ISL5927 is a dual 1 ..
ISL59421IUZ , 865MHz Multiplexing Amplifier
ISL59424IRZ , 1GHz Triple Multiplexing Amplifiers
ISL59440IAZ , 400MHz Multiplexing Amplifier
IRF7836
30V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package
International
TOR Rectifier
PD - 97171
IRF7836PbF
HEXFET® Power MOSFET
Applications
q Synchronous MOSFET for Notebook
RDS(on) max 09
Processor Power
5.7mQ@VGS = 10V 18nC
o Synchronous Rectifier MOSFET for
isolated DC-DC Converters in
Networking Systems
s 111 I a :13 D
s :112 7:1] D
Benefits 3 E 6
s :11 LIL] D
a Very Low RDS(on) at 4.5V VGS
. Low Gate Charge G J J D
0 Fully Characterized Avalanche Voltage Top View SO-8
and Current
. 100% Tested for Rs
o Lead-Free
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage t 20
ID @ T, = 25°C Continuous Drain Current, Vas @ 10V 17
ID @ TA = 70°C Continuous Drain Current, Vss @ 10V 13 A
IDM Pulsed Drain Current C) 130
PD OT, = 25°C Power Dissipation © 2.5 W
PD OT, = 70°C Power Dissipation © 1.6
Linear Derating Factor 0.02 W/°C
Tu Operating Junction and -55 to + 150 °C
TSTS Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
ROJL Junction-to-Dram Lead S - 20 "C/W
RNA Junction-to-Amblent (OCS) - 50
Notes co through co are on page 9
1
01/05/06
IRF7836PbF
International
TOR Rectifier
Static © T,, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V l/ss = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 0.024 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 4.5 5.7 mg Vss = 10V, ID = 17A ©
- 5.7 7.1 Vss = 4.5V, ID =13A ©
Vesuh) Gate Threshold Voltage 1.35 1.8 2.35 v Vos = Vss, ID = 50PA
AVasmm Gate Threshold Voltage Coefficient -- -6.2 -- mV/°C
loss Drain-to-Source Leakage Current - -- 1.0 pA Vos = 24V, Vss = 0V
- - 150 Vos = 24V, l/ss = OV, T, = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Ves = 20V
Gate-to-Source Reverse Leakage - - -100 Ves = -20V
gfs Forward Transconductance 70 - - S Vos = 15V, ID = 13A
q, Total Gate Charge - 18 27
0951 Pre-Vth Gate-to-Source Charge - 4.1 - VDS = 15V
0952 Post-Vth Gate-to-Source Charge - 1.5 - nC Vss = 4.5V
di Gate-to-Drain Charge - 5.8 - ID = 13A
ngdr Gate Charge Overdrive - 6.6 - See Fig. 17 & 18
st Switch Charge (Q952 + di) - 7.3 -
Qoss Output Charge --.- 11 --.- nC Vos = 16V, Vss = ov
Rg Gate Resistance - 1.0 1.7 Q
td(on) Turn-On Delay Time - 8.9 - VDD = 15V, l/ss = 4.5V
t, Rise Time - 11 - ID = 13A
tum) Turn-Off Delay Time - 12 - ns Clamped Inductive Load
t, Fall Time - 4.2 - See Fig. 15
Ciss Input Capacitance - 2400 - Vss = 0V
Cass Output Capacitance - 500 - pF VDS = 15V
Crss Reverse Transfer Capacitance - 230 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy Q) _ 130 mJ
IAR Avalanche Current 0) _ 13 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 3.1 A MOSFET symbol D
(Body Diode) showing the
ISM Pulsed Source Current - -- 130 A integral reverse G
(Body Diode) (D p-n junction diode. S
VsD Diode Forward Voltage - - 1.0 v T J = 25°C, ls = 13A, VGS = OV ©
trr Reverse Recovery Time - 15 23 ns TJ = 25°C, IF = 13A, VDD = 15V
a,, Reverse Recovery Charge - 17 26 nC di/dt = 500A/ps © See Fig. 16
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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