IRF7835 ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 Lead Free packageApplicationsV R maxQgDSS DS(on) Synchronous MOSFET for NotebookProcessor Power30V 4.5m@V = 10V 22 ..
IRF7836 ,30V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 packageApplicationsV R maxQgDSS DS(on) Synchronous MOSFET for Notebook30V 5.7m@V = 10V 18nCProcessor Pow ..
IRF7842 ,Power MOSFET(Vdss = 40 V)ApplicationsV R maxQg (typ.)DSS DS(on) Synchronous MOSFET for NotebookProcessor Power5.0m@V = 10V ..
IRF7842TR ,Leaded 40V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R maxQg (typ.)DSS DS(on) Synchronous MOSFET for NotebookProcessor Power5.0m@V = 10V ..
IRF7842TRPBF ,40V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplications Synchronous MOSFET for NotebookV R maxQg (typ.)DSS DS(on)Processor Power Secondary S ..
IRF7853 ,100V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 packageApplications4 5G DBenefits Low Gate to Drain Charge to Reduce SO-8Top View Switching Losses F ..
ISL58831 ,Dual Laser Driver with APC Amplifier and Spread Spectrum OscillatorApplicationsPinout• Combo CD-R + DVD-RISL58831• DVD±RW to 8X(24 LD QFN)TOP VIEW• Writable optical d ..
ISL59112IEZ-T7 , 40MHz Rail-to-Rail Video Buffer
ISL5927IN ,Dual 14-bit, +3.3V, 260+MSPS, high speed D/A converter. Clock speed 260 MHz.FeaturesD/A Converter• Low Power . . . . . 233mW with 20mA Output at 130MSPSThe ISL5927 is a dual 1 ..
ISL59421IUZ , 865MHz Multiplexing Amplifier
ISL59424IRZ , 1GHz Triple Multiplexing Amplifiers
ISL59440IAZ , 400MHz Multiplexing Amplifier
IRF7835
30V Single N-Channel HEXFET Power MOSFET in a SO-8 Lead Free package
PD - 97068
International
TOR. Rectifier IRF7835PbF
HEXFET® Power MOSFET
Applications
q Synchronous MOSFET for Notebook Voss Rnsion) max 09
Processor Power 30V 4.5mQ@VGS = 10V 22nC
o Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
. smrl ”’10
Benefits 81112 73:13
0 Very Low Orr 31113 E 61:0
o Very Low RDS(on) at 4.5V Vas
0 Ultra-Low Gate Impedance G 4'44 54L D
Fully Characterized Avalanche Voltage Top View SO-8
and Current
0 20V Vas Max. Gate Rating
o Lead-Free
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage 1 20
ID @ TA = 25°C Continuous Drain Current, Vas @ 10V 19
ID @ TA = 70°C Continuous Drain Current, Vss @ 10V 15 A
'DM Pulsed Drain Current co 150
PD ©T, = 25''C Power Dissipation 2.5 W
PD @TA = 70°C Power Dissipation 1.6
Linear Derating Factor 0.02 W/°C
TJ Operating Junction and -55 to + 155 °C
Tsrs Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
ROJL Junction-to-Drain Lead s - 20 ''C/W
FlOJA Junction-to-Ambient ©S - 50
Notes co through s are on page 9
1
1/5/06
IRF7835PbF
International
Static © To = 25°C (unless otherwise specified) TOR Rectifier
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V l/ss = 0V, ID = 250PA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 0.023 - V/°C Reference to 25°C, b = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 3.6 4.5 mn l/ss = 10V, ID = 19A ©
- 4.5 5.7 Vss = 4.5V, ID = 15A ©
VGSM Gate Threshold Voltage 1.35 1.8 2.35 V Vos = Vas, ID = 50pA
Avesuh) Gate Threshold Voltage Coefficient - -6.0 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 24V, Vss = 0V
- - 150 Vos = 24V, l/ss = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Ves = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
gfs Forward Transconductance 81 - - S Vos = 15V, ID = 15A
09 Total Gate Charge - 22 33
0931 Pre-Vth Gate-to-Source Charge - 5.5 - Vos = 15V
Ass Post-Vth Gate-to-Source Charge - 2.1 - nC Ves = 4.5V
di Gate-to-Drain Charge - 7.2 - ID = 15A
ngd, Gate Charge Overdrive - 7.2 - See Fig. 16
Q5w Switch Charge (0952 + di) - 9.3 -
Qoss Output Charge - 14 - nC Vos = 16V, I/ss = 0V
RG Gate Resistance - 1.0 1.7 Q
tam) Turn-On Delay Time - 9.6 - VDD = 15V, Ves = 4.5V
t, Rise Time - 13 - Ir, =15A
tam) Turn-Off Delay Time - 14 - ns Clamped Inductive Load
t, Fall Time - 4.6 -
Ciss Input Capacitance - 2960 - l/ss = 0V
Coss Output Capacitance - 610 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 270 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy © - 240 mJ
[AH Avalanche Current C) - 15 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 3.1 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 150 integral reverse
(Body Diode) co p-n junction diode. S
VsD Diode Forward Voltage - - 1.0 V TJ = 25°C, IS = 15A, VGS = 0V ©
trr Reverse Recovery Time - 16 24 ns Tu = 25°C, IF = 15A, Vor, = 15V
A, Reverse Recovery Charge - 21 32 nC di/dt = 320A/us ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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