IRF7834TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageIRF7834PbFHEXFET Power MOSFET
IRF7835 ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 Lead Free packageApplicationsV R maxQgDSS DS(on) Synchronous MOSFET for NotebookProcessor Power30V 4.5m@V = 10V 22 ..
IRF7836 ,30V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 packageApplicationsV R maxQgDSS DS(on) Synchronous MOSFET for Notebook30V 5.7m@V = 10V 18nCProcessor Pow ..
IRF7842 ,Power MOSFET(Vdss = 40 V)ApplicationsV R maxQg (typ.)DSS DS(on) Synchronous MOSFET for NotebookProcessor Power5.0m@V = 10V ..
IRF7842TR ,Leaded 40V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R maxQg (typ.)DSS DS(on) Synchronous MOSFET for NotebookProcessor Power5.0m@V = 10V ..
IRF7842TRPBF ,40V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplications Synchronous MOSFET for NotebookV R maxQg (typ.)DSS DS(on)Processor Power Secondary S ..
ISL58831 ,Dual Laser Driver with APC Amplifier and Spread Spectrum OscillatorApplicationsPinout• Combo CD-R + DVD-RISL58831• DVD±RW to 8X(24 LD QFN)TOP VIEW• Writable optical d ..
ISL59112IEZ-T7 , 40MHz Rail-to-Rail Video Buffer
ISL5927IN ,Dual 14-bit, +3.3V, 260+MSPS, high speed D/A converter. Clock speed 260 MHz.FeaturesD/A Converter• Low Power . . . . . 233mW with 20mA Output at 130MSPSThe ISL5927 is a dual 1 ..
ISL59421IUZ , 865MHz Multiplexing Amplifier
ISL59424IRZ , 1GHz Triple Multiplexing Amplifiers
ISL59440IAZ , 400MHz Multiplexing Amplifier
IRF7834TRPBF
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
International
a:io:RIectifier
Applications
o Synchronous MOSFET for Notebook
Processor Power
0 Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
PD - 95292
IRF7834PbF
HEXFET@ Power MOSFET
VDss RDS(on) max 09 (typ.)
30V 4dimf2@Vss = 10V 29nC
o Lead-Free
s EDT D
. s m2 H :11: D
Benefits 3 H r 6
s [ID [3]] D
0 Very Low RDS(on) at 4.5V VGS
o Ultra-Low Gate Impedance G E m D
o Fully Characterized Avalanche Voltage Top View SO-8
and Current
o 20V VGS Max. Gate Rating
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage k 20
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 19
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 16 A
IDM Pulsed Drain Current C) 160
PD @TA = 25°C Power Dissipation © 2.5 W
PD @TA = 70°C Power Dissipation (D 1.6
Linear Derating Factor 0.02 W/''C
To Operating Junction and -55 to + 150 ''C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
' Junction-to-Drain Lead © - 20 "C/W
ROJA Junction-to-Ambient (DCO _ 50
Notes C) through s are on page 10
9/21/04
IRF7834PbF
International
TOR Rectifier
Static © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDss Drain-to-Source Breakdown Voltage 30 - - V I/ss = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 0.023 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 3.6 4.5 m9 VGS = 10V, ID = 19A ©
- 4.4 5.5 I/ss = 4.5V, ID = 16A ©
VGS(th) Gate Threshold Voltage 1.35 - 2.25 V Ws = VGs, ID = 250pA
AVGSOh) Gate Threshold Voltage Coefficient - - 5.2 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA Ws = 24V, I/ss = 0V
- - 150 Vos = 24V, Vss = 0V, T: = 125°C
less Gate-to-Source Forward Leakage - - 100 nA VGS = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
gts Forward Transconductance 85 - - S Vos = 15V, ID = 16A
09 Total Gate Charge - 29 44
0951 Pre-N/th Gate-to-Source Charge - 7.5 - Vos = 15V
0952 Post-Vth Gate-to-Source Charge - 2.7 - nC Vss = 4.5V
di Gate-to-Drain Charge - 9.8 - ID = 16A
ngdr Gate Charge Overdrive - 9.0 _- See Fig. 16
st Switch Charge (Qgs2 + di) - 12.5 -
Qoss Output Charge - 19 - nC Vos = 16V, VGS = 0V
td(on) Turn-On Delay Time - 13.7 - VDD = 15V, VGS = 4.5V ©
t, Rise Time - 14.3 - ID = 16A
td(off) Turn-Off Delay Time - 18 - ns Clamped Inductive Load
tf Fall Time - 5.0 -
Ciss Input Capacitance - 3710 - VGS = 0V
Coss Output Capacitance - 810 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 350 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy © - 25 mJ
IAR Avalanche Current CD - 16 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 3.1 MOSFET symbol D
(Body Diode) A showing the Lt
ISM Pulsed Source Current - - 160 integral reverse 0 C,
(Body Diode) © p-n junction diode. R
Vso Diode Forward Voltage - - 1.0 V Tu = 25°C, ls = 16A, VGS = 0V ©
tn Reverse Recovery Time - 21 32 ns To = 25°C, IF = 16A, VDD = 15V
er Reverse Recovery Charge - 13 20 nC di/dt = 100A/ps ©
2
