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IRF7834TR
Leaded 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
International
TOR. Rectifier
Applications
o Synchronous MOSFET for Notebook
Processor Power
. Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
IRF7834
HEXFET*) Power MOSFET
PD - 94761
RDS(on) max
4dimf2@Vss = 10V 29nC
s 1111 I 8313 D
Benefits 2 7
s :11 H :1] D
. Very Low RDS(0n) at 4.5V VGS 3 r: 6
o Ultra-Low Gate Impedance s ID LIL] D
0 Fully Characterized Avalanche Voltage G M4 54M D
and Current Top View SO-8
0 20V VGS Max. Gate Rating
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage i 20
ID @ TA = 25°C Continuous Drain Current, I/ss @ 10V 19
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 16 A
'DM Pulsed Drain Current T 160
PD @TA = 25°C Power Dissipation © 2.5 W
Po @TA = 70''C Power Dissipation © 1.6
Linear Derating Factor 0.02 Wl°C
To Operating Junction and -55 to + 150 ''C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
ROJL Junction-to-Drain Lead s - 20 “OM
ROJA Junction-to-Ambient TS _ 50
Notes C) through s are on page 10
2/26/04
IRF7834 International
TOR Rectifier
Static © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V I/ss = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 0.023 - V/“C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 3.6 4.5 m9 VGS = 10V, ID = 19A ©
- 4.4 5.5 VGS = 4.5V, ID = 16A ©
VGS(th) Gate Threshold Voltage 1.35 - 2.25 V Vros = VGS, ID = 250pA
Avesah) Gate Threshold Voltage Coemcient - - 5.2 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 24V, VGS = 0V
- - 150 VDS = 24V, Vss = 0V, T: = 125°C
less Gate-to-Source Forward Leakage - - 100 nA VGS = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
gfs Forward Transconductance 85 - - S Vos = 15V, ID = 16A
Qg Total Gate Charge - 29 44
0951 Pre-Vth Gate-to-Source Charge - 7.5 - Voss = 15V
Qgs2 Post-Vth Gate-to-Source Charge - 2.7 - nC I/ss = 4.5V
di Gate-to-Drain Charge - 9.8 - ID = 16A
ngdr Gate Charge Overdrive - 9.0 _- See Fig. 16
st Switch Charge (Q952 + di) - 12.5 -
Qoss Output Charge - 19 - nC Vos = 16V, VGS = 0V
tum) Turn-On Delay Time - 13.7 - vDD = 15V, Vss = 4.5V ©
t, Rise Time - 14.3 - ID = 16A
tum) Turn-Off Delay Time - 18 - ns Clamped Inductive Load
t, Fall Time - 5.0 -
Ciss Input Capacitance - 3710 - VGS = 0V
Coss Output Capacitance - 810 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 350 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy © - 25 m J
IAR Avalanche Current O) - 16 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 3.1 MOSFET symbol D
(Body Diode) A showing the Lt
ISM Pulsed Source Current - - 160 integral reverse 6 C,
(Body Diode) LO p-n junction diode. q
Va, Diode Forward Voltage - - 1.0 V Tu = 25°C, ls = 16A, VGS = 0V ©
trr Reverse Recovery Time - 21 32 ns TJ = 25°C, IF = 16A, VDD = 15V
Qrr Reverse Recovery Charge - 13 20 nC di/dt = 100A/ps ©
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