IRF7832ZTRPBF ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R maxQgDSS DS(on) Synchronous MOSFET for Notebook3.8m
IRF7832Z-IRF7832ZTRPBF
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD - 96013A
lRF7832ZPbF
HEXFET© Power MOSFET
International
TOR Rectifier
Applications
VDss RDS(on) max 09
o Synchronous MOSFET for Notebook
Processor Power 30V 3.8mQ@VGS = 10V 30nC
o Synchronous Rectifier MOSFET for
Isolated DC-DC Converters
. s EED‘ ' a 3]] D
Benefits 2 7
s ED] H ID D
0 Very Low RDS(on) at 4.5V l/ss S ma 71 r SID D
o Ultra-Low Gate Impedance
o Fully Characterized Avalanche Voltage G CUT SID D
and Current Top View SO-8
. 20V 1/ss Max. Gate Rating
0 Lead-Free
o 100% tested for Rg
Absolute Maximum Ratings
Parameter Max. Units
VDS Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage t 20
ID @ TA = 25°C Continuous Drain Current, Vss @ 10V 21
ID @ T, = 70°C Continuous Drain Current, Vas @ 10V 17 A
IDM Pulsed Drain Current OD 160
PD @TA = 25°C Power Dissipation 2.5 W
PD @TA = 70°C Power Dissipation 1.6
Linear Derating Factor 0.02 WPC
TJ Operating Junction and -55 to + 150 ''C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
ROJL Junction-to-Drain Lead s - 20 °CNV
ROJA Junction-to-Ambient C9C9 - 50
Notes C) through S are on page 10
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06/30/05
IRF7832ZPbF International
TOR Rectifier
Static @ T,, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVoss Drain-to-Source Breakdown Voltage 30 - - V Vas = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 0.023 - VPC Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 3.1 3.8 mn Vas = 10V, ID = 20A ©
- 3.7 4.5 Vas = 4.5V, ID = 16A ©
VGS(lh) Gate Threshold Voltage 1.35 - 2.35 V Vos = VGS, ID = 250PA
AVesm.) Gate Threshold Voltage Coefficient - -5.5 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 24V, VGS = 0V
- - 150 Vos = 24V, Vas = 0V, To = 125°C
lass Gate-to-Source Forward Leakage - - 100 nA Vas = 20V
Gate-to-Source Reverse Leakage - - -100 Vos = -20V
gts Forward Transconductance 80 - - S Vos = 15V, ID = 16A
09 Total Gate Charge - 30 45
0951 Pre-Vth Gate-to-Source Charge - 7.9 - VDS = 15V
0952 Post-Vth Gate-to-Source Charge - 2.6 - nC Vos = 4.5V
di Gate-to-Drain Charge - 11 - lo = 16A
ngdr Gate Charge Overdrive - 8.5 - See Fig. 16
st Switch Charge (Qgsz + di) - 13.6 -
Qoss Output Charge - 19 - nC Vos = 16V, Vas = OV
Hg Gate Resistance - 1.2 1.9 Q
tum") Turn-On Delay Time - 14 - Vor, = 15V, Vas = 4.5V
t, Rise Time - 15 - ID =16A
1mm Turn-Off Delay Time - 18 - ns Clamped Inductive Load
tt Fall Time - 5.6 -
Ciss Input Capacitance - 3860 - Vas = 0V
Cass Output Capacitance - 840 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 370 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy co - 350 m0
|AR Avalanche Current CD - 16 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 3.1 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 160 integral reverse G
(Body Diode) G) p-n junction diode. S
Vso Diode Forward Voltage - - 1.0 V To = 25°C, Is =16A,VGS = 0V ©
trr Reverse Recovery Time - 16 24 ns To = 25''C, IF = 16A, VDD = 15V
Q,, Reverse Recovery Charge - 29 44 nC di/dt = 500A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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