IRF7832TRPBF. ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R maxQgDSS DS(on) Synchronous MOSFET for NotebookProcessor Power4.0m @V = 10V30V
IRF7832TRPBF-IRF7832TRPBF.
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD - 95016A
IRF7832PbF
HEXFET© Power MOSFET
International
TOR Rectifier
Applications
q Synchronous MOSFET for Notebook Voss RDS(on) max titg
Processor Power 30V 4.0mf2@Vas = 10V 34nC
o Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
q Lead-Free scm‘ 'EIDD
s EEDZ H 7:11 D
Benefits 3 71 r s
s CED ID D
q Very Low RDS(on) at 4.5V l/ss
G m1“ 5331 D
o Ultra-Low Gate Impedance
9 Fully Characterized Avalanche Voltage Top View SO-8
and Current
20V I/os Max. Gate Rating
100% tested for Rg
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage t 20
ID @ TA = 25°C Continuous Drain Current, Vss © 10V 20
ID @ TA = 70°C Continuous Drain Current, Vas @ 10V 16 A
IDM Pulsed Drain Current CD 160
PD @TA = 25°C Power Dissipation 2.5 W
PD @TA = 70°C Power Dissipation 1.6
Linear Derating Factor 0.02 W/°C
TJ Operating Junction and -55 to + 155 °C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
ROJL Junction-to-Drain Lead - 2O "C/W
ROJA Junctuon-to-Amblent (9 - 50
Notes (D through (D are on page 10
1
06/30/05
IRF7832PbF
International
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDss Drain-to-Source Breakdown Voltage 30 -- -- V Vss = 0V, ID = 250PA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient -- 0.023 -- VPC Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 3.1 4.0 m9 Vos = 10V, ID = 20A ©
- 3.7 4.8 Vss = 4.5V, ID = 16A ©
VGS(th) Gate Threshold Voltage 1.39 - 2.32 V Vos = Vas, ID = 250pA
Avesuh) Gate Threshold Voltage Coefficient - 5.7 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 24V, Vas = 0V
- - 150 Vos = 24V, Vas = 0V, T, = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vas = 20V
Gate-to-Source Reverse Leakage - - -1OO Vss = -20V
gfs Forward Transconductance 77 - - S Vos = 15V, ID = 16A
q, Total Gate Charge - 34 51
0951 Pre-Vth Gate-to-Source Charge -- 8.6 -- I/rss = 15V
0952 Post-Vth Gate-to-Source Charge -- 2.9 -- nC Vss = 4.5V
di Gate-to-Drain Charge - 12 - ID = 16A
ngdr Gate Charge Overdrive - 10.5 --.- See Fig. 16
st Switch Charge (0952 + di) - 14.9 -
Qoss Output Charge - 23 - nC Vos = 16V, Vas = OV
Rg Gate Resistance - 1.2 2.4 Q
tam) Turn-On Delay Time - 12 - VDD = 15V, Vss = 4.5V
tr Rise Time - 6.7 - ID = 16A
tam) Turn-Off Delay Time - 21 - ns Clamped Inductive Load
tf Fall Time - 13 -
Ciss Input Capacitance - 4310 - Vss = ov
Coss Output Capacitance - 990 - pF l/rss = 15V
Crss Reverse Transfer Capacitance -- 450 -- f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy Q) - 260 mJ
|AR Avalanche Current LO - 16 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - --- 3.1 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 160 integral reverse G
(Body Diode) CD p-n junction diode. S
Vso Diode Forward Voltage - - 1.0 V To = 25°C, ls = 16A, l/ss = 0V ©
tn Reverse Recovery Time - 41 62 ns To = 25°C, IF = 16A, VDD = 10V
er Reverse Recovery Charge - 39 59 n0 di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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