IRF7832TR ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageIRF7832HEXFET Power MOSFET
IRF7832TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R maxQgDSS DS(on) Synchronous MOSFET for NotebookProcessor Power4.0m @V = 10V30V
IRF7832-IRF7832TR
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
International
a:io:RIectifier
PD - 94594E
lRF7832
H EXFET© Power MOSFET
Applications
q Synchronous MOSFET for Notebook Voss RDS(on) max titg
Processor Power 30V 4.0mf2@Vas = 10V 34nC
o Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
. s EED‘ ' a 3]] D
Benefits 2 7
s ED] H :11 D
0 Very Low Rosmn) at 4.5V l/ss a 71 r
o Ultra-Low Gate Impedance S E E D
o Fully Characterized Avalanche Voltage G m4 SID D
and Current Top View SO-8
20V 1/ss Max. Gate Rating
100% tested for Rg
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage t 20
ID @ TA = 25°C Continuous Drain Current, Vss © 10V 20
ID @ TA = 70°C Continuous Drain Current, Vas @ 10V 16 A
IDM Pulsed Drain Current CD 160
PD @TA = 25°C Power Dissipation 2.5 W
PD @TA = 70°C Power Dissipation 1.6
Linear Derating Factor 0.02 W/°C
TJ Operating Junction and -55 to + 155 °C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
ROJL Junction-to-Drain Lead - 2O "C/W
ROJA Junctuon-to-Amblent (9 - 50
Notes (D through (D are on page 10
1
06/30/05
IRF7832
International
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V Ves = 0V, lo = 250pA
ABN/rss/AT: Breakdown Voltage Temp. Coefficient - 0.023 - VPC Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 3.1 4.0 mg Vas = 10V, b = 20A ©
- 3.7 4.8 Vas = 4.5V, ID = 16A ©
VGS(th) Gate Threshold Voltage 1.39 - 2.32 V Vos = Vss, ID = 250pA
AVGS(th) Gate Threshold Voltage Coefficient - 5.7 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 PA I/rs = 24V, Vss = 0V
-- -- 150 VDs = 24V, Vss = 0V, T, = 125°C
less Gate-to-Source Forward Leakage -- -- 100 nA Vos = 20V
Gate-to-Source Reverse Leakage - -- -100 Vos = -20V
gfs Forward Transconductance 77 - --.- S Vos = 15V, ID = 16A
Qg Total Gate Charge - 34 51
0951 Pre-Vth Gate-to-Source Charge - 8.6 - Vos = 15V
0952 Post-Vth Gate-to-Source Charge - 2.9 - nC l/ss = 4.5V
di Gate-to-Drain Charge - 12 - ID = 16A
ngdr Gate Charge Overdrive - 10.5 - See Fig. 16
st Switch Charge (0952 + di) _ 14.9 -
Qoss Output Charge - 23 - nC Vos = 16V, Vss = 0V
Rg Gate Resistance - 1.2 2.4 Q
td(on) Turn-On Delay Time -- 12 -- VDD = 15V, Vas = 4.5V
t, Rise Time -- 6.7 -- ID =16A
td(off) Turn-Off Delay Time --- 21 --.- ns Clamped Inductive Load
t, Fall Time - 13 -
Ciss Input Capacitance - 4310 - Vss = 0V
Coss Output Capacitance - 990 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 450 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy © _ 260 mJ
|AR Avalanche Current co _ 16 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 3.1 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 160 integral reverse G
(Body Diode) CD p-n junction diode. S
Vso Diode Forward Voltage -- -- 1.0 V TJ = 25°C, Is = 16A, l/tss = 0V ©
tn Reverse Recovery Time -- 41 62 ns TJ = 25°C, IF = 16A, VDD = 10V
er Reverse Recovery Charge - 39 59 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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