IRF7831TRPBF. ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplications in Networking &Computing Systems.AA1 8S DBenefits2 7S D Very Low R at 4.5V VDS(on) GS ..
IRF7832 ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageIRF7832HEXFET Power MOSFET
IRF7832PBF , HEXFET Power MOSFET
IRF7832PBF , HEXFET Power MOSFET
IRF7832TR ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageIRF7832HEXFET Power MOSFET
IRF7832TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R maxQgDSS DS(on) Synchronous MOSFET for NotebookProcessor Power4.0m @V = 10V30V
IRF7831TRPBF-IRF7831TRPBF.
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD -95134B
International
TOR. Rectifier lRF7831 PbF
HEXFET*) Power MOSFET
Applications
V R max .
q High Frequency Point-of-Load DSS DS(on) Qg (typ )
Synchronous Buck Converter for 30V 3.6mf2@Vas = 10V 40nC
Applications in Networking &
Computing Systems.
s nrp I a :13 D
Benefits 2 7
s :11 H :1] D
0 Very Low RDS(on) at 4.5V l/ss 3 Ir' 6
o Ultra-Low Gate Impedance s ID LIL] D
0 Fully Characterized Avalanche Voltage G M4 s-UL] D
and Current Top View SO-8
. 100% Tested for He
o Lead-Free
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage i 12
ID @ TA = 25°C Continuous Drain Current, l/ss @ 10V 21
ID @ TA = 70°C Continuous Drain Current, Ves © 10V 17 A
kos, Pulsed Drain Current C) 170
PD ©T, = 25°C Power Dissipation © 2.5 w
PD @TA = 70°C Power Dissipation © 1.6
Linear Derating Factor 0.02 WPC
To Operating Junction and -55 to + 150 °C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
' Junction-to-Drain Lead - 20 °C/W
ROJA Junction-to-Ambient © _ 50
Notes co through © are on page 10
1
6/30/05
llRF7831PbF
International
Static © To = 25°C (unless otherwise specified) TOR Rectifier
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V Vas = 0V, ID = 250pA
ABI/rss/AT, Breakdown Voltage Temp. Coefficient - 0.025 - V/°C Reference to 25°C, ID = 1mA
RDSW) Static Drain-to-Source On-Resistance 2.5 3.1 3.6 mn l/ss = 10V, ID = 20A ©
3.0 3.7 4.4 Vas = 4.5V, ID = 16A ©
VGth) Gate Threshold Voltage 1.35 - 2.35 V Vos = Vas, ID = 250pA
AVGsuh) Gate Threshold Voltage Coefficient - - 5.7 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 24V, Vss = 0V
- - 150 VDS = 24V, I/ss = 0V, T, = 125°C
less Gate-to-Source Forward Leakage - - 100 nA l/ss = 12V
Gate-to-Source Reverse Leakage - - -100 Vas = -12V
gts Forward Transconductance 97 - - S VDS = 15V, ID = 16A
Qg Total Gate Charge - 40 60
0931 Pre-Vth Gate-to-Source Charge - 12 - Vos = 15V
Ass Post-Vth Gate-to-Source Charge - 3.1 - nC Vas = 4.5V
di Gate-to-Drain Charge - 11 - ID = 16A
Qgodr Gate Charge Overdrive - 14 - See Fig. 16
Qsw Switch Charge (0952 + 09.1) - 14 -
Qoss Output Charge - 22 - nC Vos = 16V, Vss = 0V
Rs Gate Resistance - 1.4 2.5 Q
td(on) Turn-On Delay Time - 18 - VDD = 15V, VGS = 4.5V ©
t, Rise Time - 10 - ID = 16A
tmom Turn-Off Delay Time - 17 - ns Clamped Inductive Load
tf Fall Time - 5.3 -
Ciss Input Capacitance - 6240 - Vas = 0V
Cass Output Capacitance - 980 - pF VDs = 15V
Crss Reverse Transfer Capacitance - 390 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy © - 100 mJ
IAF, Avalanche Current OD _ 16 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 2.5 MOSFET symbol D
(Body Diode) A showing the L,-h-
Iss, Pulsed Source Current - - 170 integral reverse 9 Il,
(Body Diode) (D p-n junction diode. cl
Vso Diode Forward Voltage - - 1.2 V To = 25°C, IS = 16A, vas = 0V ©
tr, Reverse Recovery Time - 42 62 ns To = 25°C, IF = 16A, VDD = 25V
a,, Reverse Recovery Charge - 31 47 no di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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